02140-EVMD-001-B
Abstract: 32K243-40ME3 Rosenberger 32K243-40ME3 600s101 rogers 4003 characteristics rogers 4003 SDC1-014 32K243 preset resistor 10k 3pin ROSENBERGER
Text: M02140 Evaluation Module User Guide 02140-EVMD-001-B June 2004 Revision History Revision Level Date Description B Final 06/25/2004 Update LOS Resistor Values A Final 06/25/2002 Initial Release 2004, Mindspeed TechnologiesTM, Inc. All rights reserved. Information in this document is provided in connection with Mindspeed TechnologiesTM "MindspeedTM" products. These
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M02140
02140-EVMD-001-B
02140-EVMD-001-B
32K243-40ME3 Rosenberger
32K243-40ME3
600s101
rogers 4003 characteristics
rogers 4003
SDC1-014
32K243
preset resistor 10k 3pin
ROSENBERGER
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Untitled
Abstract: No abstract text available
Text: CENTELLAX UA5M15MP Datasheet 5 - 18GHz Surface Mount Amplifier with Integrated Bias Features Surface Mount Package • Wide operating range: 5-18GHz • 3.3V, 100mA drain bias gate N/C for gain and NF: • 13 ±0.4dB gain, 7dB NF, 16dBm Psat, 13.5dBm P-1
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UA5M15MP
18GHz
5-18GHz
100mA
16dBm
130mA
17dBm
16-pin
SmD-00106
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P521CT-ND
Abstract: Cu-194 FH UA5M15MP rogers 4003 characteristics QFN-10 solder paste Centellax rogers 4003
Text: CENTELLAX UA5M15MP Datasheet 5 - 18GHz Surface Mount Amplifier with Integrated Bias Features Surface Mount Package • Wide operating range: 5-18GHz • 3.3V, 100mA drain bias gate N/C for gain and NF: • 13 ±0.4dB gain, 7dB NF, 16dBm Psat, 13.5dBm P-1
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UA5M15MP
18GHz
5-18GHz
100mA
16dBm
130mA
17dBm
16-pin
P521CT-ND
Cu-194 FH
rogers 4003 characteristics
QFN-10 solder paste
Centellax
rogers 4003
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49kV
Abstract: g1006sc rogers 4003 G1006-SC rogers 4003 characteristics XG1006-SC
Text: 0.6-2.8 GHz InGaP HBT 0.25W Medium Power Amplifier G1006-SC December 2009 - Rev 17-Dec-09 Features Functional Block Diagram Integrated Active Bias Circuit 22.5 dB Gain @ 900 MHz 16.5 dB Gain @ 2140 MHz 24 dBm P1dB 44 dBm OIP3 ESD Protection, Class 3A Low Thermal Resistance < 36.5 °C/W
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G1006-SC
17-Dec-09
XG1006-SC
OT-89
900MHz
1950MHz
2450MHz
2140MHz
49kV
g1006sc
rogers 4003
G1006-SC
rogers 4003 characteristics
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XG1005-SC
Abstract: G1005 GQM1885C2A3R9CB01B GRM185R61C105KE44 GRM1188R71H102KA01 GRM1885C1H101JA01 LQG18HNR10J00 6 ghz amplifier 20w
Text: 0.6-2.8 GHz InGaP HBT 0.5W Medium Power Amplifier G1005-SC January 2010 - Rev 07-Jan-10 Features Integrated Active Bias Circuit 20 dB of Gain @ 900 MHz 27 dBm P1dB 45 dBm OIP3 ESD Protection Low Thermal Resistance +5V Single Voltage Supply General Description
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G1005-SC
07-Jan-10
XG1005-SC
OT-89
G1005
GQM1885C2A3R9CB01B
GRM185R61C105KE44
GRM1188R71H102KA01
GRM1885C1H101JA01
LQG18HNR10J00
6 ghz amplifier 20w
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Untitled
Abstract: No abstract text available
Text: AMMP-6125 10-24 GHz x2 Frequency Multiplier Data Sheet Description Features The AMMP-6125 is an easy-to-use surface mounted packaged integrated frequency multiplier x2 that operates from 10 to 24 GHz output frequency. It has integrated amplification, matching, harmonic suppression,
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AMMP-6125
AMMP-6125
AMMP-6125-BLKG
AMMP-6125-TR1G
AMMP-6125-TR2G
AV02-3208EN
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2H18
Abstract: AMMP-6125 Note 5521, AMxP-xxxx production Assembly Process Land Pattern B
Text: AMMP-6125 10-24 GHz x2 Frequency Multiplier Data Sheet Description Features The AMMP-6125 is an easy-to-use surface mounted packaged integrated frequency multiplier x2 that operates from 10 to 24 GHz output frequency. It has integrated amplification, matching, harmonic suppression,
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AMMP-6125
AMMP-6125
AMMP-6125-BLKG
AMMP-6125-TR1G
AMMP-6125-TR2G
AV02-3208EN
2H18
Note 5521, AMxP-xxxx production Assembly Process Land Pattern B
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Untitled
Abstract: No abstract text available
Text: PTH 32002 10 Watts, 1.805–1.88 GHz 50-Ohm High-Gain Power Hybrid Description The PTH 32002 is a high–gain 50–ohm power hybrid intended for applications requiring linear amplification and high gain in the DCS frequency range. The part is designed to operate with 50–ohm source
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50-Ohm
1-77-GOLDMOS
1522-PTH
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rogers 4003
Abstract: rogers 4003 characteristics
Text: PTH 32002 10 Watts, 1.805–1.88 GHz 50-Ohm High-Gain Power Hybrid Description The PTH 32002 is a high–gain 50–ohm power hybrid intended for applications requiring linear amplification and high gain in the DCS frequency range. The part is designed to operate with 50–ohm source
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50-Ohm
1-877-GOLDMOS
1522-PTH
rogers 4003
rogers 4003 characteristics
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P1044-QL
Abstract: XP1044-QL-EV1 XP1044-QL XP1044-QL-0N00 56GHz
Text: 3.5-6.0 GHz 3W Power Amplifier Module P1044-QL March 2010 - Rev 30-Mar-10 Features 34 dBm P1dB Pout 26 dBm @ EVM = 2.5% PAR=9.17 dB 46 dBm OIP3 18.5 dB Gain 8V Voltage Supply Input Internally Matched 7x7mm Surface Mount Package Ideal for WiMAX Applications @ 5.8 GHz and
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P1044-QL
30-Mar-10
XP1044
XP1044-QL-0N00
XP1044-QL-EV1
XP1044-QL-EV2
P1044-QL
XP1044-QL-EV1
XP1044-QL
XP1044-QL-0N00
56GHz
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capacitor 10 uF x 25 v pth
Abstract: No abstract text available
Text: PTH 32003 25 Watts, 1.9–2.0 GHz 50-Ohm High-Gain HIT Description The PTH 32003 is a high–gain 50–ohm power hybrid intended for applications requiring linear amplification and high gain in the PCS frequency range. The part is designed to operate with 50–ohm source
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50-Ohm
1-877-GOLDMOS
1522-PTH
capacitor 10 uF x 25 v pth
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32001
Abstract: rogers 4003
Text: PTH 32001 10 Watts, 1.9–2.0 GHz 50-Ohm High-Gain Power Hybrid Description The PTH 32001 is a high–gain 50–ohm power hybrid intended for applications requiring linear amplification and high gain in the PCS frequency range. The part is designed to operate with 50–ohm source
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50-Ohm
1-877-GOLDMOS
1522-PTH
32001
rogers 4003
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Untitled
Abstract: No abstract text available
Text: PTH 32001 10 Watts, 1.9–2.0 GHz 50-Ohm High-Gain Power Hybrid Description The PTH 32001 is a high–gain 50–ohm power hybrid intended for applications requiring linear amplification and high gain in the PCS frequency range. The part is designed to operate with 50–ohm source
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50-Ohm
1-877-GOLDMOS
1522-PTH
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rogers 4003 characteristics
Abstract: No abstract text available
Text: PTF 102003 LDMOS RF Power Field Effect Transistor 120 Watts, 2110–2170 MHz Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P–1dB and 14 dB linear gain. Full gold
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1522-PTF
rogers 4003 characteristics
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Untitled
Abstract: No abstract text available
Text: Preliminary ES/SMM5723XZ 17 – 24GHz Low Noise/ Driver Amplifier MMIC FEATURES • Wafer Level Chip Size Package with Solder Ball • Low Noise Figure : NF=2.7dB typ. • High Associated Gain : Gas=20dB (typ.) • +4dBm Input Third Order Intercept Point (IIP3)
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ES/SMM5723XZ
24GHz
50ohm
ES/SMM5723XZ
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Untitled
Abstract: No abstract text available
Text: Preliminary ES/SMM5724XZ 24 – 30GHz Low Noise/ Driver Amplifier MMIC FEATURES • Wafer Level Chip Size Package with Solder Ball • Low Noise Figure : NF=3.2dB typ. • High Associated Gain : Gas=22dB (typ.) • +4dBm Input Third Order Intercept Point (IIP3)
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ES/SMM5724XZ
30GHz
50ohm
ES/SMM5724XZ
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Untitled
Abstract: No abstract text available
Text: SMM5722XZ 12 – 16GHz Low Noise/ Driver Amplifier MMIC FEATURES • Wafer Level Chip Size Package with Solder Ball • Low Noise Figure : NF=2.3dB typ. • High Associated Gain : Gas=20dB (typ.) • +5dBm Input Third Order Intercept Point (IIP3) • Low Current Consumption : IDD_LNA=30mA
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SMM5722XZ
16GHz
50ohm
SMM5722XZ
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SP8T Infineon
Abstract: uhf circulator schematic diagram of bluetooth Hands-Free infineon RF FM Transceiver IC BGS12A BGS12AL7-4 BGS12AL7-6 E4419B GSM1900
Text: A p p l i c a t i o n N o t e , R e v . 1 . 1 , F e b . 2 00 9 A p p li c a t i o n N o t e N o . 1 7 5 RF CMOS SPDT Switches B G S 1 2 x x f or A p p l i c a t i on s u p to 3 G H z S m a l l S i g n a l D i s c r et e s Edition 2009-02-25 Published by Infineon Technologies AG
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BGS12AL7-4:
SP8T Infineon
uhf circulator
schematic diagram of bluetooth Hands-Free
infineon RF
FM Transceiver IC
BGS12A
BGS12AL7-4
BGS12AL7-6
E4419B
GSM1900
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Untitled
Abstract: No abstract text available
Text: TQP4M3018 Preliminary Data Sheet SP3T High Power 2.6V CDMA Antenna Switch Features Functional Block Diagram Top View V3 N/C ANT N/C 12 11 10 Pin 1 1 • • 9 V1 RF3 2 8 RF1 N/C 3 7 N/C • • • • • • • 3.0 +/- 0.05 mm 4 5 6 N/C RF2 V2 3.0 +/- 0.05 mm
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TQP4M3018
MLP-12
TQP4M3018
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Untitled
Abstract: No abstract text available
Text: TQP4M3007 Data Sheet SP3T High Power 2.6V CDMA Antenna Switch Features Functional Block Diagram Top View V3 N/C ANT N/C 12 11 10 Pin 1 1 • • 9 V1 • RF3 2 8 RF1 N/C 3 7 N/C • • • • • • 3.0 +/- 0.05 mm 4 5 6 N/C RF2 V2 3.0 +/- 0.05 mm pHEMT GaAs MMIC Die
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TQP4M3007
MLP-12
TQP4M30007
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mlp 836
Abstract: antenna CDM MLP-12 C12V3 TQP4M3018 Triquint duplexer
Text: TQP4M3018 Data Sheet SP3T High Power 2.6V CDMA Antenna Switch Functional Block Diagram Top View V3 Features N/C ANT N/C 12 11 10 Pin 1 1 • • 9 V1 RF3 2 8 RF1 N/C 3 7 N/C • • • • • • • 3.0 +/- 0.05 mm 4 5 6 N/C RF2 V2 3.0 +/- 0.05 mm MLP-12 Packaged PHEMT GaAs MMIC Die
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TQP4M3018
MLP-12
TQP4M3018
mlp 836
antenna CDM
C12V3
Triquint duplexer
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TQP4M3007
Abstract: No abstract text available
Text: TQP4M3007 Data Sheet SP3T High Power 2.6V CDMA Antenna Switch Features Functional Block Diagram Top View V3 N/C ANT N/C 12 11 10 Pin 1 1 • • 9 V1 • RF3 2 8 RF1 N/C 3 7 N/C • • • • • • 3.0 +/- 0.05 mm 4 5 6 N/C RF2 V2 3.0 +/- 0.05 mm pHEMT GaAs MMIC Die
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TQP4M3007
MLP-12
TQP4M30007
TQP4M3007
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TQP4M3007
Abstract: No abstract text available
Text: TQP4M3007 Data Sheet SP3T High Power 2.6V CDMA Antenna Switch Features Functional Block Diagram Top View V3 N/C ANT N/C 12 11 10 Pin 1 1 • • 9 V1 • RF3 2 8 RF1 N/C 3 7 N/C • • • • • • 3.0 +/- 0.05 mm 4 5 6 N/C RF2 V2 3.0 +/- 0.05 mm pHEMT GaAs MMIC Die
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TQP4M3007
MLP-12
TQP4M30007
TQP4M3007
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Untitled
Abstract: No abstract text available
Text: SMM5142XZ 17.7 – 23.6GHz Down converter MMIC FEATURES • Wafer Level Chip Size Package with Solder Ball • Integrated Balanced Mixer, Low Noise Amplifier, LO Buffer Amplifier and x2 multiplier • 10dB Conversion Gain • 2.6dB Noise Figure • +2dBm Input Third Order Intercept Point IIP3
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SMM5142XZ
SMM5142XZ
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