RS-8960
Abstract: diagram of gunn diode RS Microwave Company 747 opamp X-band doppler radar module metal detector using 555 timer gunn diode radar module radar gunn diode 308-017 rs s band doppler mixer
Text: Issued July 1985 003-598 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.
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X-band doppler radar module
Abstract: RS-8960 308-017 rs metal detector using 555 timer diagram of gunn diode Gunn Diode at power supply circuit 747 opamp gunn diode radar gunn diode radar module gunn diode x band amplifier
Text: Issued March 1997 232-2324 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.
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R/3598
X-band doppler radar module
RS-8960
308-017 rs
metal detector using 555 timer
diagram of gunn diode
Gunn Diode at power supply circuit
747 opamp
gunn diode radar
gunn diode radar module
gunn diode x band amplifier
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2N3866A
Abstract: No abstract text available
Text: 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTO. 1 of 2 Home Part Number: 2N3866A Online Store 2N3866A Diodes RF & M IC RO WAVE DISC RETE LO W PO WER TRANSISTO RS Transistors Enter code INTER3 at
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2N3866A
com/2n3866a
2N3866A
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gunn diode x band amplifier
Abstract: RS-8960 gunn diode x band radar X-band doppler radar module 308-017 rs gunn diode radar module RS8960 Gunn Diode at power supply circuit microwave intruder alarm diagram of gunn diode
Text: E/F3598 Issued July 1985 Doppler module Stocknumber 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave
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E/F3598
R/3598
gunn diode x band amplifier
RS-8960
gunn diode x band radar
X-band doppler radar module
308-017 rs
gunn diode radar module
RS8960
Gunn Diode at power supply circuit
microwave intruder alarm
diagram of gunn diode
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2n3632
Abstract: No abstract text available
Text: 2N3632 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WI. 1 of 1 Home Part Number: 2N3632 Online Store 2N3632 Diodes RF Transistors & M IC RO WAVE TRANSISTO RS VHF - UHF C LASS C WIDE BAND Integrated Circuits
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2N3632
com/2n3632
2N3632
O-210AB
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2N5053
Abstract: 2N5053 package transistor TO-72
Text: 2N5053 RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR. 1 of 1 Home Part Number: 2N5053 Online Store 2N5053 Diodes RF & M IC RO WAVE DISC RETE LO W PO WER TRANSISTO RS Transistors Enter code INTER3 at
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2N5053
com/2n5053
2N5053
2N5053 package
transistor TO-72
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2n5109
Abstract: transistor 2N5109
Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR. 1 of 1 Home Part Number: 2N5109 Online Store 2N5109 Diodes RF & M IC RO WAVE DISC RETE LO W PO WER TRANSISTO RS Transistors Enter code INTER3 at
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2N5109
com/2n5109
2N5109
transistor 2N5109
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1030 mhz filter
Abstract: 1030 mhz notch filter
Text: RS MICROWAVE COMPANY, INC NOTCH FILTERS * * * * * PART NO 20981 21901-1 21901 F 32401-1* 40351-1 40421-1 50523-1 50523-2 50703-3 83522 83523 Low Insertion Loss and Rejection to 66 dB 1030 or 1090 MHz Notch Center Frequency 250 Watt and 1250 Watt Peak Power
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES LLE18300X QUICK REFERENCE DATA D iffu se d e m itte r b a lla s tin g re s is to rs
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125002/00/03/pp12
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MICROWAVE ASSOCIATES ISOLATOR
Abstract: AS218 transistor
Text: Semiconductor Discretes for RF-Microwave Applications Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high-performance analog and mixed-signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and
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CAT501-09A
MICROWAVE ASSOCIATES ISOLATOR
AS218 transistor
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PIN diode ADS model
Abstract: Microwave PIN diode spice Microwave detector diodes 18 GHz HSMS-285x model ADS 10 diode Microwave detector diodes HSMS-286 diode ADS model spice HSMS-285X
Text: 6 July 1999 Choosing the Right Diode For Your AGC Detector Raymond W. Waugh Diode Applications, Wireless Semiconductor Division Hewlett-Packard Company AGC Automatic Gain Control loops are used to control the gain or output power of amplifiers in a wide variety
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HSMS-282x
HSMS-285x
HSMS-286x
theHSMS-282x
HSMS-286x
PIN diode ADS model
Microwave PIN diode spice
Microwave detector diodes 18 GHz
HSMS-285x model
ADS 10 diode
Microwave detector diodes
HSMS-286
diode ADS model
spice
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mmic
Abstract: mwtinc MWT-A970 "Microwave Diodes" MWT-7 wirebond MIL-PRF-38534 fine leak MwT-LP770 MwT-170 LN-141510-H4
Text: hi-rel and space product screening MicroWave Technology An IXYS Company High-Reliability and Space-Reliability Screening Options Space Qualified Low Noise Amplifiers Model Pkg New Freq Linear Gain Gain Fitness Input RL Output RL GHz Typ (dB) Typ +/-(dB)
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LN-162315-H4
LN-141510-H4
LN-141526-H4
mmic
mwtinc
MWT-A970
"Microwave Diodes"
MWT-7 wirebond
MIL-PRF-38534 fine leak
MwT-LP770
MwT-170
LN-141510-H4
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hsms-285x
Abstract: Microwave zero bias detector diodes Zero Bias Small Detector Diodes Hewlett-Packard microwave pin diode Hewlett-Packard Semiconductor HSMS-286x
Text: 6 July 1999 Detector Selector Wireless Semiconductor Division Hewlett-Packard Company The selection of the proper Schottky diode for a detector application depends upon several factors, and must be carefully done. The circuit designer must consider the relative values
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d285x
HSMS-282x
HSMS-285x
HSMS-286x
HSMS-286x
hsms-285x
Microwave zero bias detector diodes
Zero Bias Small Detector Diodes
Hewlett-Packard microwave pin diode
Hewlett-Packard Semiconductor
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TIC 138
Abstract: anzac termination insensitive mixer ts.228 tic 208 tic 136 tic 122 tic 234
Text: TABLE OF CONTENTS Cantenis G e n e ra l page Product Section F in d e r. 1 Company In tro d u c tio n . 4
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smd TRANSISTOR code marking w2
Abstract: g1 TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING CODE Circuit using ic 1895 bel ultrasonic movement DETECTOR CIRCUIT DIAGRAM 1895 bel ic TRANSISTOR SMD MARKING CODE ag FR4 epoxy dielectric constant 4.4 TRANSISTOR SMD MARKING CODES 431A SMD CODE MARKING
Text: A KYOCERA GROUP COMPANY AVX RF Microwave/ Thin-Film AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major microwave ceramic capacitor manufacturer, it is our mission to provide First In Class Technology,
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QV2000
S-RFTF20M798-C
smd TRANSISTOR code marking w2
g1 TRANSISTOR SMD MARKING CODE
2l TRANSISTOR SMD MARKING CODE
Circuit using ic 1895 bel
ultrasonic movement DETECTOR CIRCUIT DIAGRAM
1895 bel ic
TRANSISTOR SMD MARKING CODE ag
FR4 epoxy dielectric constant 4.4
TRANSISTOR SMD MARKING CODES
431A SMD CODE MARKING
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smd code marking 561B
Abstract: BP 43 substitution T 582 smd marking mp Germanium power CDR12
Text: A KYOCERA GROUP COMPANY AVX RF Microwave/Thin-Film Products AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and
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S-RFMTF0M0201-C
smd code marking 561B
BP 43 substitution
T 582
smd marking mp
Germanium power
CDR12
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MA4P800
Abstract: No abstract text available
Text: m an A M P company Beam-Lead PIN Diodes MA4P461, MA4P462, MA4P800, MA4P801 V 2.00 Features • • • • • High Performance Microwave Characteristics Fast Switching Speeds Glass Encapsulated Construction Hermetically Sealed Mechanically Rugged - 6 Grams Minimum
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MA4P461,
MA4P462,
MA4P800,
MA4P801
MA4P800
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TRANSISTOR SMD MARKING CODE ag4
Abstract: 6647a srf 1714 47056 smd Transistor gl 1117 B 1155 lga socket 0402LGA 7082 BEL 1895 CDR11BP
Text: A KYOCERA GROUP COMPANY AVX RF Microwave/Thin-Film Products AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and
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S-RFMTF15M1203-C
TRANSISTOR SMD MARKING CODE ag4
6647a
srf 1714
47056
smd Transistor gl 1117 B
1155 lga socket
0402LGA
7082
BEL 1895
CDR11BP
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TRANSISTOR ZFW
Abstract: zfw 03 capacitor mallory ZFW TRANSISTOR transistor 5w transistor j18 PH2731-5M TT50M50A transistor power 5w transistor 335
Text: an AMP company Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10% Duty PH2731-5M 2.7 - 3.1 GHz v2.00 Features ,930 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PH2731-5M
40-j12
TT50M50A7
TRANSISTOR ZFW
zfw 03
capacitor mallory
ZFW TRANSISTOR
transistor 5w
transistor j18
PH2731-5M
TT50M50A
transistor power 5w
transistor 335
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5082-2835 diode
Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
Text: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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diode hp 2835 schottky
Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
Text: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship
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MIL-PRF-49464
Abstract: No abstract text available
Text: www.avx.com AVX Single Layer Ceramic & MOS Capacitors for Applications from DC to Light Version 10.10 Microwave Single Layer Capacitors Table of Contents Single Layer Ceramic Capacitors SLC’s General Information Dielectrics, Environmental Tests, How to Order (Catalog Number Description) . . . . . . . . . . . . . . . . . . . . . . . . . . .2-3
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S-SLC0M1010-C
MIL-PRF-49464
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metal detector vlf 15khz
Abstract: sma connector 0.508mm Smith esr meter kit Shielded Microstrip 6647a dielectric resonator KYOCERA GH0158101MA6N uhf microwave fet MIL-C-55681 2082-2700-00
Text: www.avx.com AVX Single Layer Ceramic & MOS Capacitors for Applications from DC to Light Version 6.1 Microwave Single Layer Capacitors Table of Contents Single Layer Ceramic Capacitors SLC’s General Information Dielectrics, Environmental Tests, How to Order (Catalog Number Description) . . . . . . . . . . . . . . . . . . . . . . . . . . .2-3
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S-SLC5M706-C
metal detector vlf 15khz
sma connector 0.508mm
Smith esr meter kit
Shielded Microstrip
6647a
dielectric resonator KYOCERA
GH0158101MA6N
uhf microwave fet
MIL-C-55681
2082-2700-00
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