transistor 6R385P
Abstract: 6r385 6r385P
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.1, 2010-06-28 Preliminary Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description Pr The CoolMOS™ CP series offers devices which provide all benefits of a fast
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IPL60R385CP
150mm²
transistor 6R385P
6r385
6r385P
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AN5606K
Abstract: an5606 AN5636K IC AN5606K GP12-14 PAL color bar RY 227 1V191 gp1214
Text: ICs for TV AN5636K SECAM/PAL signal conversion IC • Overview 26.7±0.3 • Rationalizing IHDL in common use with PAL IHDL • Lowering 6H line crawling by the quasi-PAL modulation • For both auto and manual modes of signal processing 15 16 8.6±0.3 4.7±0.25
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AN5636K
SDIP030-P-0400
AN5606K
an5606
AN5636K
IC AN5606K
GP12-14
PAL color bar
RY 227
1V191
gp1214
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74HC74 oscillator application note
Abstract: AD5933 howland Source ADCMP60x digital ohmmeter circuit diagram 74HC74 ADCMP37x pioneer subwoofer current divider rule AD5933 rev. c
Text: AN-843 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Measuring a Loudspeaker Impedance Profile Using the AD5933 by Sean Brennan INTRODUCTION This application note describes the circuit architecture and details
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AN-843
AD5933
AD5933
AN06060-0-6/07
74HC74 oscillator application note
howland Source
ADCMP60x
digital ohmmeter circuit diagram
74HC74
ADCMP37x
pioneer subwoofer
current divider rule
AD5933 rev. c
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LXV Series
Abstract: SPORT timing DIAGRAM OF ROM MRS 1031 4 bit by bit 4 multiplication IC db 3 xv 27 diagram for 4 bits binary multiplier circuit ADSP-21065L B-28 B-30
Text: , ,1' ; Numerics 32- and 48-bit memory words, using 5-30 32-bit data starting memory address 5-35 A AC (ALU fixed-point carry bit 2-16 described 2-18 fixed-point logic operations and 2-18 setting and clearing 2-18 AC condition 3-13 Access address fields for external memory
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48-bit
32-bit
16-bit
ADSP-21065L
LXV Series
SPORT
timing DIAGRAM OF ROM
MRS 1031
4 bit by bit 4 multiplication IC
db 3 xv 27
diagram for 4 bits binary multiplier circuit
B-28
B-30
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GE Manual
Abstract: Transistor BFT 98 oscilloscope service manual mos 620 ADSP-21065L B-28 B-30 B-31
Text: , ,1' ; Numerics 32- and 48-bit memory words, using 5-30 32-bit data starting memory address 5-35 A AC (ALU fixed-point carry bit 2-16 described 2-18 fixed-point logic operations and 2-18 setting and clearing 2-18 AC condition 3-13 Access address fields for external memory
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48-bit
32-bit
16-bit
ADSP-21065L
GE Manual
Transistor BFT 98
oscilloscope service manual mos 620
B-28
B-30
B-31
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ic 5056 mv 85
Abstract: GA150TS60U
Text: PD -5.056 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA150TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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GA150TS60U
ic 5056 mv 85
GA150TS60U
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LH28F256
Abstract: LH28F256BFHTD lh28f256bfht LH28F256BFHTD-PTTLZ3 LH28F256BFHTD-PTTLZ3A LH28F256BF LHF25FZ3 lh28f256bfh
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F256BFHTD-PTTLZ3A Flash Memory 256Mbit 16Mbitx16 (Model Number: LHF25FZ3) Spec. Issue Date: May 12, 2004 Spec No: FM045008 LHF25FZ3 Preliminary • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F256BFHTD-PTTLZ3A
256Mbit
16Mbitx16)
LHF25FZ3)
FM045008
LHF25FZ3
LH28F256
LH28F256BFHTD
lh28f256bfht
LH28F256BFHTD-PTTLZ3
LH28F256BFHTD-PTTLZ3A
LH28F256BF
LHF25FZ3
lh28f256bfh
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SKM 600 gb
Abstract: Semitrans skm 75 gb 100 SKM 300 CIRCUIT SKM 200 APPLICATION skm 100 gb 101 d SKM 195 Gb 123 IGBT 838102 SKM 75 GB 123 iran
Text: 5EMIKR0N innovation + service take your pick there is a p e rfe ct fit fo r your a pp lica tio n rugged easy paralleling short c ircu it p ro of lo w sw itch in g losses 1 2 6 series: SEMITRANS Trench IGBT 1 2 8 series: SEMITRANS SPT IGBT o chips ^ package
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TC74HC7292AP/AF TO SH IBA CM O S D IG ITAL IN TEG RATED CIRCU IT SILICON M O N O LITHIC TC74HC7292AP, TC74HC7292AF PROGRMMABLE DIVIDER/TIMER The TC74HC7292A is a high speed CMOS PROGRAMMABLE DIVIDER / TIMER fabricated w ith silicon gate C2MOS technology.
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TC74HC7292AP/AF
TC74HC7292AP,
TC74HC7292AF
TC74HC7292A
16PIN
DIP16-P-300-2
16PIN
200mil
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logic diagram of 74ls160
Abstract: IC 74LS160 74hc162 74LS160 function of the ic 74hc160 74hc161 74HC163 74LS160 truth
Text: HS-CMOS INTEGRATED CIRCUITS C ^ I C i• rO / r ' r1 • U O 4- PREtlM INAR Y DATA SYNCHRONOUS PRESETTABLE 4-BIT COUNTER M 54/74H C 160 M 54/74HC161 M 54/74H C 162 M 54/74H C 163 Decade, Asynchronous Clear Binary, Asynchronous Clear Decade, Synchronous Clear
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M54/74HC160
M54/74HC161
M54/74HC162
M54/74HC163
M54/74HC160,
M54/74HC160/162
M54/74HC161/163
M54/74HC160/1
M54/74HC162/163
logic diagram of 74ls160
IC 74LS160
74hc162
74LS160 function of the ic
74hc160
74hc161
74HC163
74LS160 truth
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Untitled
Abstract: No abstract text available
Text: GT25G102 SM TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR G T 2 5 G 1 2 SILICON N-CHANNEL IGBT ( S M ) U n it in mm STROBE FLASH APPLICATIO NS • High Input Impedance • • • Low Saturation Voltage : v CE(sat) = 8V (Max.) (Ic = 150A) Enhancem ent-Mode
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GT25G102
2-10S2C
GT25G1Q2
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cm2716
Abstract: MCM6665 6847Y MC6847 C1373 3CDG MCM6633 imcm4027 pic upd
Text: M C 6 8 4 7 Non-Interlace MOTOROLA M C 6 8 4 7 Y Interlace MC6847/M C6847Y VIDEO DISPLAY GENERATOR VDG MOS (N -C H A N N E L, SILICON-GATEJ T he video display gen era tor IV D G ) provides a m eans o f in terfacing th e M 6800 m icroprocessor fam ily (or sim ilar products) to a standard c o l
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MC6847/M
C6847Y
cm2716
MCM6665
6847Y
MC6847
C1373
3CDG
MCM6633
imcm4027
pic upd
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Untitled
Abstract: No abstract text available
Text: MOTOROLA QUAD TTL-TO-MECL TRANSLATOR WITH TTL STROBE INPUT L SUFFIX C E R A M IC P A C K A G E C A S E 620 Th e M C10H124 is a quad tran slato r fo r interfacing data and co n trol sig n a ls betw een a saturated lo g ic section an d the M E C L section o f digital system s. The 10H part is a function al/p in ou t
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C10H124
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motorola s3p02
Abstract: S3P02 LA 4224
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t Medium Power Surface Mount Products TM O S S ingle P -C h ann el Field E ffe c t Tran sisto rs SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS M in iM O S "' d e vice s are an a d va n ce d se rie s of p o w e r M O S FE Ts
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SF3P02HD
motorola s3p02
S3P02
LA 4224
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Untitled
Abstract: No abstract text available
Text: bq2003 BENCHMARQ Fast Charge 1C Features General Description >• F ast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2003 F ast Charge IC provides comprehensive fast charge control functions together w ith high-speed switching power control circuitry on a
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bq2003
bq2003
16-pin
137flfln
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ic cd 4051b
Abstract: D4052BC 4051bt 4052C D4051BC CD4051B 4053B 4052bt
Text: 2 H A R R IS C D 4051B , C D 4052B , C D 4053B Types CMOS Analog Multiplexers/Demultiplexers* channels }« IN/OUT ) 6 _ COM OUT/IN With Logic-Level Conversion High-Voltages Types 20-V olt Rating) CD4051B — Single 8-Channel CD4052B — Differential 4-Channel
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4051B
4052B
4053B
CD4051B
CD4052B
CD4053B
CD4051B,
4052B,
4053B
92CS-27050
ic cd 4051b
D4052BC
4051bt
4052C
D4051BC
4052bt
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Untitled
Abstract: No abstract text available
Text: Tem ic sìiiconix_ SÌ4936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 •DSion) (ß ) I d (A) 0.037 @ VGS = 10 V ±5.8 0.055 @ Vqs = 4.5 V ±4.7 V SO-8 S, |T G, [ T ~ n D, T | D, s2 [ T g 2 i t ~6~| Ü2 T ] D,
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4936DY
S-42148--
4936DY
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE ! Q M 50E2Y/E3Y-H • lc • • • • Collector current. 50A VCEX Collector-emitter voltage.600V hFE DC current gain. 75
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QM50E2Y/E3Y-H
50E2Y/E3Y-H
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: DS26S10C/DS26S10M/DS26S11C/DS26S11M NATL SEMICOND iflENORY} IDE D | b S D H S b 00bBSfci5 D | t— 52— 31 National Semiconductor DS26S10C/DS26S10M/DS26S11C/DS26S11M Quad Bus Transceivers General Description The DS26S10 and DS26S11 are quad Bus Transceivers
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DS26S10C/DS26S10M/DS26S11C/DS26S11M
00bBSfci5
DS26S10C/DS26S10M/DS26S11C/DS26S11M
DS26S10
DS26S11
0S26S11
OS26S10
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Octal transceiver with dual enable, inverting 3-State _ . _ 74ABT620 FEATURES DESCRIPTION • Octal bidirectional bus interface The 74ABT620 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high
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74ABT620
64mA/-32mA
500mA
74ABT620
74ABT
500ns
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tm 1640
Abstract: No abstract text available
Text: bq2003 BENCHJVIARQ Fast Charge 1C Features General Description >- Fast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2003 Fast Charge IC provides com prehensive fast charge control functions together w ith high-speed switching power control circuitry on a
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bq2003
bq2003
16-pin
tm 1640
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NE529
Abstract: tic 223
Text: Philips Semlconductors-SIgnetlcs Linear Producís Product specification Voltage comparator NE529 DESCRIPTION FEATURES The NE 529 is a high -sp e e d ana log voltag e c o m p a ra to r w h ich, fo r the first tim e, m ates state -o f-th e -a rt S ch o ttky d io d e technology
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NE529
NE529
tic 223
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TDA3561A
Abstract: TDA3560
Text: TDA3561A A PAL DECODER The T D A 3 5 6 1 A is a decoder for the P A L colour television standard. It combines all functions required for the identification and demodulation of P A L signals. Furthermore it contains a luminance amplifier, an RGB-matrix and amplifier. These amplifiers supply output signals up to 5 V peak-to-peak picture
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TDA3561A
TDA3561A
TDA3560
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC74HC7292AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT Tr7AHr77Q7AP m M m m m m/F m ma g SILICON MONOLITHIC TC7Ú. UC7 7 QJ A P m a m m m m m ma PROGRMMABLE DIVIDER/TIM ER The TC74HC7292A is a high speed CMOS PROGRAMMABLE DIVIDER / TIMER fabricated with silicon gate C2MOS
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TC74HC7292AP/AF
Tr7AHr77Q7AP
TC74HC7292A
16PIN
DIP16-P-300-2
16PIN
200mil
OP16-P-300-1
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