S/TRANSISTOR KT 801 Search Results

S/TRANSISTOR KT 801 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

S/TRANSISTOR KT 801 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor kt 326 Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816 Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j \| R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice	OCR Scan		PDF
kd226 Abstract: KD522B transistor c 6073 transistor KT 209 M transistor kt 801 KD226B KT805AM Diode KD 521 a transistor KT 209 4413.13-02 Text: SERVICE-MITTEILUNGEN V E B RFT I N D U S T R I E V E R T R I E B ¡D j RUNDFUNK UND F E R N S E H E N raa/o te/ev/s/on \| - Ausgabe 1968 M am 4-5 Seite 1 - 8 Mitteilung aus dem VEB RFT IV RuF Leipzig/S 1. Regenerierung von UKW-Tunern 1.1. Allgemeine Informationen	OCR Scan		PDF
transistor BD 512 Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A Text: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern	OCR Scan	12-VAkku /50Hz III/18/379 transistor BD 512 transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A	PDF
Halbleiterbauelemente DDR Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372 Text: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der	OCR Scan		PDF
KT 819 transistor Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18 Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e	OCR Scan		PDF
transistor A1023 Abstract: transistor A1023 y A1023 A1023 Y a1023 transistor A1023 K Y kec a1023 KTC1027 A-1023 KTA1023 Text: SEMICONDUCTOR TECHNICAL DATA KT A 1023 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURE • Complementary to KTC1027. MAXIMUM RATINGS Ta=25 °C SYMBOL RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage	OCR Scan	A1023 KTC1027. T0-92L transistor A1023 transistor A1023 y A1023 A1023 Y a1023 transistor A1023 K Y kec a1023 KTC1027 A-1023 KTA1023	PDF
full subtractor circuit using decoder and nand ga Abstract: full subtractor circuit using nor gates Remington 700 full subtractor circuit using nand gate full subtractor using NOR gate for circuit diagram Text: V L S I Technology , in c PRELIMINARY VGT100 SERIES ADVANCED CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in seven array sizes from 9,000 to 50,000 usable gates 12,149 to 66,550 available gates The VGT100 Series is an advanced,	OCR Scan	VGT100 100-063-A-23-096 full subtractor circuit using decoder and nand ga full subtractor circuit using nor gates Remington 700 full subtractor circuit using nand gate full subtractor using NOR gate for circuit diagram	PDF
Kt 0912 Abstract: full subtractor circuit using decoder and nand ga schematic transistor modul trigger full subtractor circuit using nand gates DR 4180 vlsi design physical verification VGT100160 Remington 700 full subtractor circuit using nor gates sis 968 Text: V L SI Technology, inc . PRELIMINARY VGT100 SERIES ADVANCED CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES 7 FEATURES DESCRIPTION • Available in seven array sizes from 9,000 to 50,000 usable gates (12,149 to 66,550 available gates The VGT100 Series is an advanced,	OCR Scan	VGT100 100-063-A-23-096 Kt 0912 full subtractor circuit using decoder and nand ga schematic transistor modul trigger full subtractor circuit using nand gates DR 4180 vlsi design physical verification VGT100160 Remington 700 full subtractor circuit using nor gates sis 968	PDF
SGS-Thomson ball grid array Abstract: CB35000 ISB35000 2M x 16 DPRAM signal path designer io out put buffer predriver Text: CB35000 SERIES  HCMOS STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.	Original	CB35000 SGS-Thomson ball grid array ISB35000 2M x 16 DPRAM signal path designer io out put buffer predriver	PDF
7939-2 Abstract: signal path designer CB35000 Series Text: CB35000 SERIES  HCMOS STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.	Original	CB35000 7939-2 signal path designer CB35000 Series	PDF
chip die npn transistor Abstract: No abstract text available Text: 700 Series 20V BIPOLAR ARRAY DESIGN MANUAL Last Revision Date: 2 December 2005 The 700 Series Design Manual has been originated and is maintained by Hans Camenzind, Array Design Inc. San Francisco. Feedback is welcome. Array Design offers design assistance	Original		PDF
tungsram Abstract: rft halbleiter service-mitteilungen service mitteilungen rft RFT Service Mitteilung Tesla VEB Funkwerk Erfurt VEB Kombinat Mitteilung VEB RFT Servicemitteilungen Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N r a d i o - television SEITE AUSGABE: OKTOBER E E 1 - 8 Der Taschenempfänger "QUARTZ - 402" setzt die Reihe der Impor te ähnlicher Empfänger aus der Sowjetunion fort. Abgesehen von	OCR Scan	QUARTZ402" 145x213x73 III/18/379 tungsram rft halbleiter service-mitteilungen service mitteilungen rft RFT Service Mitteilung Tesla VEB Funkwerk Erfurt VEB Kombinat Mitteilung VEB RFT Servicemitteilungen	PDF
VEBO-15V Abstract: 2SC4736 ITR07504 ITR07505 Text: 2SC4736 Ordering number : EN3975A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4736 High hFE, Low-Frequency General-Purpose Amplifier Applications Features • • • • • • • • Large current IC=2A . Adoption of MBIT process.	Original	2SC4736 EN3975A VEBO15V) VEBO-15V 2SC4736 ITR07504 ITR07505	PDF
MSD 7818 Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1	OCR Scan	6250b MSD 7818 MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN	PDF

BPW21R Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al	Original		PDF
str 5707 Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703 Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification	Original	MS-001, MS-010, MS-011) MS-010) MS-018) str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703	PDF
VGT200 Abstract: full subtractor circuit using decoder and nand ga Text: VLSI T ec h n o lo g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in thirteen sizes from 960 to 54,000 usable gates The VGT200 Series is an advanced, high performance CMOS gate array	OCR Scan	VGT200 400-018-A-028 full subtractor circuit using decoder and nand ga	PDF
R/CHN 041 diode Abstract: No abstract text available Text: V L S I Te c h n o l o g y in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES ^ s • Advanced f.O microij/idrawn silicon gate'technutbgy • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency	OCR Scan	VGT300 R/CHN 041 diode	PDF
TRANSISTOR w2f sot23 Abstract: w2f smd transistor w2f transistor sot23 w2f transistor SMD W2f SMD W2f transistor TRANSISTOR w2f w2f smd data sheet for all smd components W2F capacitor 10mf 16v Text: , Your Broad Line Supplier of Passive Components AVX, again in 1998, has introduced a whole series of new products. Some of these products were obtained from AVX’s acquisition of TPC and although not necessarily “New” products they are new to the AVX name.	Original	S-SMTS15M898-N TRANSISTOR w2f sot23 w2f smd transistor w2f transistor sot23 w2f transistor SMD W2f SMD W2f transistor TRANSISTOR w2f w2f smd data sheet for all smd components W2F capacitor 10mf 16v	PDF
w2f smd transistor Abstract: w2f transistor sot23 TRANSISTOR w2f sot23 w2f transistor SMD W2f smd w2f transistor TRANSISTOR w2f w2f smd smd code W2F smd transistor W2F 56 Text: What’s New At For , Your Broad Line Supplier of Passive Components AVX, again in 1998, has introduced a whole series of new products. Some of these products were obtained from AVX’s acquisition of TPC and although not necessarily “New” products they are new to the AVX name.	Original	S-SMTS15M898-N w2f smd transistor w2f transistor sot23 TRANSISTOR w2f sot23 w2f transistor SMD W2f smd w2f transistor TRANSISTOR w2f w2f smd smd code W2F smd transistor W2F 56	PDF
TRANSISTOR SMD 613 Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)	Original	MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor	PDF
2SD 4206 Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)	Original	MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B 2SD 4206 str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC	PDF
VLSI Technology Abstract: kt 714 schematic transistor modul trigger pt6005 vlsi design physical verification VGT300 "VLSI Technology Inc." PT6055 GAH 521 fabrimex Text: V L S I T ec h n o lo g y , in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES s • Advanced f.O microp/fdrawn silicon gate'techrrology • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency	OCR Scan	VGT300 VLSI Technology kt 714 schematic transistor modul trigger pt6005 vlsi design physical verification "VLSI Technology Inc." PT6055 GAH 521 fabrimex	PDF
INTEL 87C196 USER MANUAL Abstract: intel 87C196 Bosch antilock brake 5.4 87C196 270646 80C196KR 80C196kr instruction set 87c196ca 8XC196 instruction set 8xC196 Text: 8XC196Kx, 8XC196Jx, 87C196CA Microcontroller Family User’s Manual Includes 8XC196KQ, 8XC196KR, 8XC196KS, 8XC196KT, 8XC196JQ, 8XC196JR, 8XC196JT, 8XC196JV, 87C196CA 8XC196Kx, 8XC196Jx, 87C196CA Microcontroller Family User’s Manual Includes 8XC196KQ, 8XC196KR, 8XC196KS, 8XC196KT,	Original	8XC196Kx, 8XC196Jx, 87C196CA 8XC196KQ, 8XC196KR, 8XC196KS, 8XC196KT, 8XC196JQ, 8XC196JR, 8XC196JT, INTEL 87C196 USER MANUAL intel 87C196 Bosch antilock brake 5.4 87C196 270646 80C196KR 80C196kr instruction set 87c196ca 8XC196 instruction set 8xC196	PDF

S/TRANSISTOR KT 801 Search Results

S/TRANSISTOR KT 801 Result Highlights (5)

S/TRANSISTOR KT 801 Datasheets Context Search

transistor kt 326

kd226

transistor BD 512

Halbleiterbauelemente DDR

KT 819 transistor

transistor A1023

full subtractor circuit using decoder and nand ga

Kt 0912

SGS-Thomson ball grid array

7939-2

chip die npn transistor

tungsram

VEBO-15V

MSD 7818

BPW21R

str 5707

VGT200

R/CHN 041 diode

TRANSISTOR w2f sot23

w2f smd transistor

TRANSISTOR SMD 613

2SD 4206

VLSI Technology

INTEL 87C196 USER MANUAL