BUK437-500A
Abstract: BUK437-500B
Text: N AflER PHILIPS/DISCRETE 25E D • ^53131 00E03S0 fi ■ P o w erM O S tra n s is to r B U K 437-500A BU K 437-500B T - s 7 - 15- GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
BUK437-500A
BUK437-500B
BUK437
-500A
-500B
OT-93;
|
PDF
|
BUK437-600B
Abstract: BUK437 BUK437-600A Trt-100 t34 transistor IE-07 T34 diode
Text: N AMER P H I L I P S / D I S C R E T E 2SE bbS3T31 0D2032S D 7 B U K 437-600A B U K 437-600B P ow erM O S tra n s isto r T - S * ? - ]S GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
bbS3T31
0D2032S
BUK437-600A
BUK437-600B
BUK437
-600A
-600B
OT-93;
Trt-100
t34 transistor
IE-07
T34 diode
|
PDF
|
BUK437-500A
Abstract: 0020325 BUK437-500B
Text: N AflER PHILIPS/DISCRETE 25E D ^53131 0 0 E0 3 E0 fi B U K 437-500A BU K 437-500B P o w erM O S tra n s isto r I ¿ 7 -1 5 - GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
00E03E0
BUK437-500A
BUK437-500B
BUK437
-500A
-500B
OT-93;
0020325
BUK437-500B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbSBT31 0030310 S • SSE D B U K 437-400A B U K 437-400B P o w e rM O S tra n s is to r T -3 7 -/5 T G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
bbSBT31
37-400A
437-400B
BUK437
-400A
-400B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSE D N AMER PHI LIP S/ DIS CR ET E ^53131 0020320 fl B U K 437-500A B U K 437-500B P o w e rM O S tra n s is to r T ~ 3 7 ” 15- G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
37-500A
437-500B
BUK437
-500A
-500B
0D20324
|
PDF
|
IN5522b
Abstract: Codi Semiconductor IN5529B IN5530B IN5525B IN5521B IN5524B in5523b IN551 IN5518
Text: ~ dF | i 7?SM70 0 Q D 0 S 7 7 1 1775470 C O D I SEMICONDUCTOR INC II 90D 00577 D JANTXIN5518B through JANTXIN5528B LOW NOISE VOLTAGE REGULATOR DIODES CODI Semiconductor Inc. '|T LOW NOISE LOW VOLTAGE REGULATOR DIODES to MIL-S-19500/437 PLEASE «0TE4°SuCT0RC WCGE
|
OCR Scan
|
JANTXIN5518B
JANTXIN5528B
MIL-S-19500/437
IN5521B
IN5522B
IN5523B
IN5524B
IN5525B
IN5526B
IN5527B
Codi Semiconductor
IN5529B
IN5530B
IN551
IN5518
|
PDF
|
TBA 150A
Abstract: TBA+150A
Text: 37bflSS2 0Ü1ÖS13 437 IPLSB GEC P LE S S E Y S E M I C O N D U C T O R S DC1870 Series PLANAR DOPED BARRIER WAVEGUIDE MIXER DIODES Planar doped barrier PDB waveguide mixer diodes represent a major advancement in mixer/detector technology. These diodes offer good conversion loss at tow local oscillator
|
OCR Scan
|
37bflSS2
DC1870
100jiA
37bflS22
DC1870
DC1871
DC1874
375GHz
200C2
TBA 150A
TBA+150A
|
PDF
|
SENSYM sx150
Abstract: SENSYM SX100D SenSym SX15D SX100 LM324 rtd with wheatstone bridge- temperature sensor SX15 AT-2150 SX30AN Wheatstone Bridge amplifier
Text: SENSYM INC b5E D 3 4 ^ 7 3 7 00G23EE 437 SenSym s x i 5, SX30, s x i 00, s x i 50 0 to 15 psi and 0 to 150 psi PRESSURE SENSORS FEATURES GENERAL DESCRIPTION • High Impedance Bridge • Absolute and Differential Gage Devices The SX Series of pressure sensors
|
OCR Scan
|
00G23EE
sxi00,
SX15A
SX15AN
SX15AHO
SX15AN2
SX15AP1
SX15AD1,
SX30AN
SX30AHO
SENSYM sx150
SENSYM SX100D
SenSym SX15D
SX100
LM324
rtd with wheatstone bridge- temperature sensor
SX15
AT-2150
Wheatstone Bridge amplifier
|
PDF
|
DIODE SJ 98
Abstract: BUK437-450B
Text: N AMER P H I L I P S / D I S C R E T E 5SE D •I fabSBTai 0050B1S M PowerMOS transistor B U K 437-450B T -3^ -15* GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
BUK437-450B
OT-93;
DIODE SJ 98
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MPS-343717-02 3400 to 3700 MHz Linear Amplifier Preliminary Data Sheet Features: MP S-3 437 45 dBm IP3 12.5 dB Gain +28.5 dBm P1dB 170 Single Positive Bias Leadless Surface Mount Package 2 The MPS-343717-02 is a low cost high linearity modular amplifier designed to meet the
|
Original
|
MPS-343717-02
MPS-343717-02
CDMA2000,
|
PDF
|
1025R
Abstract: No abstract text available
Text: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-437 G 8th. Edition Features • Low on-resistance • Capable o f 2.5 V gate drive • Low drive current • High density mounting Outline S O P -8 7 8 D D 5 6 OD o o QJ ô
|
OCR Scan
|
HAT1025R
ADE-208-437
1025R
|
PDF
|
RS-397
Abstract: T500 TR07 t507
Text: Fast Switching RMS Up to 1 4 0 0 Volts 1 0 -5 0 fjs T 5 0 7 - _70 Conform s to T O -8 3 O u tlin e Conform s to T O -9 4 O utline Sym bol' A A, B $D E F J M N Q <*>T Z <*>W Inches Min. 5.775 6.850 .055 .860 1.031 .255 2.50 .437 .796 .260 .250 Max. 6.265 7.500
|
OCR Scan
|
y2-20
00A/usec)
RS-397
T500
TR07
t507
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Tiva TM4C129CNCPDT Microcontroller D ATA SHE E T D S -T M 4C 129C NCP DT - 1 5 6 3 8 . 2 7 11 S P M S 437 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated. Tiva and TivaWare are trademarks of Texas Instruments Incorporated. ARM and Thumb are
|
Original
|
TM4C129CNCPDT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIE D • Ôl3bb71 QD03bSÖ 437 m S E K G SEMIKRON IN<T~ SEMIKRON Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj, Tstg Visol humidity climate Values Units 800 800 20 80 ±20 400 - 5 5 . . .+150 2 500 Class F 55/150/56 V V A A V W °C V 20 80
|
OCR Scan
|
l3bb71
QD03bSÃ
13bb71
0Q03b31
T-39-27
|
PDF
|
|
|
HSMP3811
Abstract: sot-23 MARKING CODE G1 HSMP3821 HSMP-3801 HSMP3831 HSMP3881 HSMP-3811 hsmp-3831 hsmp3801 HSMP-3881
Text: Surface Mount PIN Diodes Available Configurations SOT-23 DIE APPLICATION GUSS SINGLE SINGLE SERIES COMMON ANODE b R B / o HPNWXJ01 HPND-0002 HPND-0003 5082-0012 tr 'a S' X - ll XX ht-ir là ' COMMON CATHODE LOW LOW INDUCTANCE INDUCTANCE B a Il XX '- á -Ir 1
|
OCR Scan
|
OT-23
HPNWXJ01
HSMP-3802
HSMP-3812
HSMP-3800
HSMP-3801
HSMP-3810
HSMP-3811
HSMP-3820
HSMP-3821
HSMP3811
sot-23 MARKING CODE G1
HSMP3821
HSMP3831
HSMP3881
hsmp-3831
hsmp3801
HSMP-3881
|
PDF
|
BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
|
Original
|
DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
|
PDF
|
SMD 437 diode
Abstract: BKC Semiconductors DSAIH0002562 0000b32
Text: MINI-MELF-SMD LL4153 Applications II] Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TXJ TXV and S level per
|
OCR Scan
|
LL4153
MIL-S-19500/437
LL-34/35
DO-35
Mil-S-19500
DO-213AA)
4031-B
1N4153UR-1
DO-213AA
SMD 437 diode
BKC Semiconductors
DSAIH0002562
0000b32
|
PDF
|
493a2s
Abstract: NTE5844 NTE584 10 AMP 1200V RECTIFIER DIODE NTE5845 NTE5912 NTE5933 NF-2A
Text: NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode 20 Amp, DO4 Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.
|
Original
|
NTE5844
NTE5845,
NTE5912
NTE5933
NTE5844,
NTE5933
493a2s
NTE5844
NTE584
10 AMP 1200V RECTIFIER DIODE
NTE5845
NF-2A
|
PDF
|
NTE5912
Abstract: NTE584 NTE5844 NTE5845 NTE5933
Text: NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode, 20 Amp Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.
|
Original
|
NTE5844
NTE5845,
NTE5912
NTE5933
NTE5844,
NTE5933
NTE584
NTE5844
NTE5845
|
PDF
|
JANTX1N5518B-1
Abstract: ZENER 1N5 Datasheet 1N5518 1N5518B 1N5546 1N5546B-1 DO-204AH DO-213AA JANTX1N5518BUR-1 JANTXV1N5546D-1
Text: 1N5518B thru 1N5546B-1 DO-35 Low Voltage Avalanche Diodes DO-35 SCOTTSDALE DIVISION APPEARANCE The 1N5518 thru 1N5546 series of 0.5 watt Zener Voltage Regulators provides a selection from 3.3 to 33 volts in standard 5% tolerances as well as tighter tolerances identified by different suffix letters on the part number.
|
Original
|
1N5518B
1N5546B-1
DO-35
1N5518
1N5546
DO-35
MIL-PRF-19500/437.
DO-204AH)
JANTX1N5518B-1
ZENER 1N5 Datasheet
DO-204AH
DO-213AA
JANTX1N5518BUR-1
JANTXV1N5546D-1
|
PDF
|
ZENER DIODE 437
Abstract: ZENER 1N5 Datasheet 1N5518 1N5518B 1N5546 1N5546B-1 DO-204AH DO-213AA JANTX1N5518B-1 JANTX1N5518BUR-1
Text: 1N5518B thru 1N5546B-1 DO-35 Low Voltage Avalanche 500 mW Zener Diodes DO-35 SCOTTSDALE DIVISION APPEARANCE The 1N5518 thru 1N5546 series of 0.5 watt Zener Voltage Regulators provides a selection from 3.3 to 33 volts in standard 5% tolerances as well as tighter tolerances identified by different suffix letters on the part number.
|
Original
|
1N5518B
1N5546B-1
DO-35
1N5518
1N5546
DO-35
MIL-PRF-19500/437.
DO-204AH)
ZENER DIODE 437
ZENER 1N5 Datasheet
DO-204AH
DO-213AA
JANTX1N5518B-1
JANTX1N5518BUR-1
|
PDF
|
MIL-prf-19500/437
Abstract: 1N5523 DO7 ZENER DIODE 437 DO-213AA izl diode marking n55 1N5518 1N5518B 1N5526 DO7 1N5546B
Text: 1N5518B thru 1N5546B-1 DO-7 Low Voltage Avalanche 500 mW Zener Diodes DO-7 SCOTTSDALE DIVISION APPEARANCE The 1N5518B thru 1N5546B series of 0.5 watt Zener Voltage Regulators provides a selection from 3.3 to 33 volts in standard 5% tolerances as well as tighter tolerances identified by different suffix letters on the part number. The
|
Original
|
1N5518B
1N5546B-1
1N5546B
DO-35
MIL-PRF-19500/437.
1N5518B-1N5546B-1,
MIL-prf-19500/437
1N5523 DO7
ZENER DIODE 437
DO-213AA
izl diode
marking n55
1N5518
1N5526 DO7
|
PDF
|
zener diode, zl 33
Abstract: No abstract text available
Text: 1N5518BUR-1 thru 1N5546BUR-1 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV Low Voltage Avalanche 500 mW Zener Diodes Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage
|
Original
|
1N5518BUR-1
1N5546BUR-1
MIL-PRF-19500/437
1N5546BUR-1
T4-LDS-0037,
zener diode, zl 33
|
PDF
|
ecg rectifier diode
Abstract: ECG 558 ECG diodes diode ecg 588 ECG555A 110MP
Text: Microwave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IMPED. 0 3 0 MHz (Ohms) VSWR Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060
|
OCR Scan
|
1N415C
1N415E
1N416C
1N416E
ECG553
ECG566A
ECG571
ECG616A
Z13-2
DO-92
ecg rectifier diode
ECG 558
ECG diodes
diode ecg 588
ECG555A
110MP
|
PDF
|
