TC4009UBR
Abstract: No abstract text available
Text: TC4008BP DYNAMIC ELECTRICAL CHARACTERISTICS Ta=25°C, V S s=OV, CL= 50P F CHARA C T E R I S T I C SYMBOL MIN. TEST COND I T I O N V DD TYP. MAX. 80 200 UNIT (V) 5 _ 10 - 50 100 15 _ 40 80 5 _ 80 200 10 - 50 100 - 40 80 Output Tr a n s i t i o n Time (Low to High)
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TC4008BP
C4009UBP
TC4010BP
TC4009UBPJC4010BP
TC4009UBR
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D515 transistor
Abstract: transistor c 5171 BD520 transistor s19 bd519 BD517 BD 54 transistor
Text: MOTOROLA SC -CXSTRS/R 6367254 “Tb F> MOTOROLA SC DE | t . 3 b 7 S S 4 00ö0ti03 Ö 96D 8 0 6 0 3 CXSTRS/ R F D T^33-o7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN SILICO N A M PLIFIER TR A N S IS TO R S 4 5 - 60 - 80 VOLTS 10 W ATTS NPN SILICO N ANNULAR
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0ti03
33-o7
BD515
BD517
BD519
BD516,
BD518,
BD520
D515 transistor
transistor c 5171
BD520
transistor s19
BD 54 transistor
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Untitled
Abstract: No abstract text available
Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions Values Units 1 1200 1200 2 90 / 200 V V A 5 80 / 400 ±20 1350 - 4 0 . + 150 125) 2500 Class F 4 0 /12 5 /5 6 A V W °C V 1 9 5 /1 3 0 5 80 / 400 1450 10 500 A A A A2s V cE S lc R Ge = 20 T oase = 25 /85 °C
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Untitled
Abstract: No abstract text available
Text: CAD DRAWING - ND MANUAL REVISIONS Q[ 10, 80] NOTES' 1, 2, DESIGN AND INTERFACE PER I, D, S, -20, ACCOMODATES MILL7/L33 - RG 405 OR EQUIVALENT CABLE, 3, CAP SHIPPED LOOSE, PAbEH S H G F REV, PE R ECN 5 1 3 7 RER ECN 4 5 8 8 REL. ECN 4 5 6 9 D E S C R IP T IO N
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MILL7/L33
D7/D1/98
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ic shipping tray
Abstract: BG0505 epak shipping tray MSA-3032 msc 140 -10003 ePAK BG0505 ePAK tray drawing EPAK TRAY 309000
Text: REVISIONS REV i r 00 M a n u f a c t u r in g S ite M a rk in g T e x t p r o t r u s i o n 0.15max DESCRIPTION INITIAL RELEASE DATE APPROVED KK Thee 02/01/10 - 3 2 2 .6 ± 0 .5 L - 3 1 5 .0 ± 0 .5 ( A > 80-ND HDLES (VACUUM PICKUP CELL)
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15nax
MSA-3032.
BG0505
MSC17011
2B4-B200
MSC-5891
ic shipping tray
BG0505 epak
shipping tray
MSA-3032
msc 140 -10003
ePAK
ePAK tray drawing
EPAK TRAY
309000
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Untitled
Abstract: No abstract text available
Text: 10 ,0 5 2 1.32 ^T Y P 3.81 HIG H EST POINT s=;n O PTIO N A L SIDE P A N E L GROUND T A B S T Y P 8 S E E NO TE 8 IS O M E T R IC VIE W (N O T T O S C A L E ) 1.052 2 6 .7 3 ,071 1 .80 TYP 3 .5 6 *0 .6 4 S E E N O TE 9 ,1 2 8 ,128 3 .2 5 3 .2 5 _ a f= b r
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SD-44520-001
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Untitled
Abstract: No abstract text available
Text: engineered to light up your design www.vcclite.com 1.800.522.5546 5600 Series T-1 Right Angle LED Assembly Description and Features 3. 00/2. 30 4. 10 5. 30 HOUS IN G : B L A C K T H E R MO P L A S T IC UL 94-V 0 0. 50 S T A N D - O F F 6. 40 3. 00 + 4. 80/4. 10
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5600F5
5600F7
5600F1LC
5600F5LC
5600F7LC
5602F1-5V
5602F3-5V
5602F5-5V
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Untitled
Abstract: No abstract text available
Text: -y K IC ; U C Z f Ì J W * HYBRID ICS S IC FILTERS'- i T A IY Ö YUDEN U S A . I N C 33E .» • Ö03547S ■ ÿ 5 7 4 V 9 < a ' 5' -f 1f (5ch) GRAPHIC EQUALIZERS (5ch.) : EA1035 0000434 • In tern a l circuit € 10 a 9 80 -oir < < ‘Ö Fraqutncy rMpant* ch*r»ct»ri*tle»
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03547S
EA1035
B00ST
NMX4S931
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V7-1F37D8-271-1
Abstract: No abstract text available
Text: 1 CW-B0685 FO-50360-L 1 2 1 3 4 1 1 5 1 6 1 1 1 8 1 REV 5 9 DOCUMENT 0000506 C HANGED BY TRF 10 12AUG03 CHECK SAV 38 5 1 25 40 2X .187± . 003 n CORROSION R E S I S T A N T S T E E L A C T UA T OR C H A R A C T E R I ST ICS 1 80 GRAMS 2 f) G R A M R E L E A S E F O R C E -DIFFERENTIAL TRAVEL. 01 5
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FO-50360-L
CW-B0685
FORCE------180
1/10HP
120CT01
5M-1994
V7-1F37D8-271-1
V7-1F37D8-271-1
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6AG7
Abstract: LG27 Deutschen Demokratischen Republik
Text: VEBWERK FÜR FERNMELDEWESEN 6 AG 7 Kolbenabm essungen Sockelschaltschem a TECH N I SCH E D A T E N Heizung: Heizspannung Heizstrom Uf !f 6,3 650 V mA Ua U g3 U g2 R. 300 150 80 V V V n l a lg2 S D2 R Ra N,^, 30 7 11 5 90 7 3,5 mA mA mA/V % kn kn W 2'° 10
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/V/4/26
6AG7
LG27
Deutschen Demokratischen Republik
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Untitled
Abstract: No abstract text available
Text: 9EEZ0LPS O O F - O —2 1 2 F C 0 5 . 0 8 ? *0N ONIMVUQ -§g-fM N0TE.1 A P P L I C A B L E WIRE: & 1 10 20 HAV 0.5sq 0 . 5 s q co 40 50 60 70 80 ( ONL Y HAV-0.5sq t i~ h 90 100 ( HAV USE) 0 .5 sq |:ffl)( 1 JR ft REV. #-J! a DATE — m DR. a i CHK. n ft s
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JACS-20084
CAC60
CE2J28HC01
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D1651
Abstract: d1047 c3987 B817 c2078 D1650 d1402 D1649 B1273 d1878
Text: MOS FET : VDSS, I D C o n t i n u e d on n e x t p a g e T O - 2 2 0 . F I ( L S , t y p e ) 50 60 75 80 D1394* A1258* B507 B1273 B1346 C3144* D313 D1912 D2027 C2078 C4547* 3 3. 5 4 4. 5 B824 D1060 D1395* 5 5. 5 6 8 9 10 12 15 150 200 250 J 282 B884* D1194 *
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D1394*
A1258*
B1273
B1346
C3144*
D1912
D2027
A1259*
A1289
C3145
D1651
d1047
c3987
B817
c2078
D1650
d1402
D1649
d1878
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Untitled
Abstract: No abstract text available
Text: 00 NOT SCALE 20. 10 N S. C 3 4 4 2 7 1 . 1 9 .7 0 CONTROL DIM, C.A.O. PILE CON D1HEN510N5 IN MN. \ ^ O . 2ÌÀI I / 32-50 ^ ' \' \> \' \' '\ '\ L K I\ «v I ' I x 0 .8 5 * ^ >> ^ o 10a ,'2 x 4".>80 = 9» 6 0 \ F V \ - 4 .5 0 -, • I 1-00 à ■ - S - _ n i_
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D1HEN510N5
C344271
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Untitled
Abstract: No abstract text available
Text: 6 9 Z8 01PS ’ ON 0N IM V U a ##M H •t + 0.2 3 . 4 ° P 0 F - 0 ~ 2 12 F ( 0 5 . 0 8 ? 2 - 0 o 10 20 30 40 70 80 90 100 i B DATE Jfc Sc REV. DON W. R S DESCRIPTION NO. m a h DR. i CHK. n AP P D . APPD. S P E C I F I C A T I O N C F - A D 1- P T I T L E
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CS-70063
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Untitled
Abstract: No abstract text available
Text: DESCRIPTION AND FEATURES 3. 00/2. 30 3.95 +/- .15 5. 30 HOUS IN G : B L A C K T H E R MO P L A S T IC UL 94-V 0 0. 50 S T A N D - O F F 6. 40 3. 00 + 4. 80/4. 10 CA T HO DE - G R E E N F O R B I- C O L O R L E D 0. 50 1. 30 LE D T-1 S IZ E S E E S P E C . T AB L E
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UL94V-O
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c828
Abstract: tr c828 c877 ED6A cm 480b ed7a c828 as time relay iwatt marking EB 13007 c828 equivalent
Text: I I MI L-M-38510/480B 14 A p ril 1983 SUPERSEDING M I L - H - 3 8 5 10 /4 80 A 4 September 1981 MILITARY SP ECI FI C AT I ON MI CROCI RCUITS, D I G I T A L , MONOLITHIC 8 N-CHANNEL, SI LI CON GATE - B I T MICROPROCESSOR T h i s s p e c i f i c a t i o n i s a ppr ove d f o r us e by a l l
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MIL-M-38510/480B
MIL-H-38510/480A
MIL-M-38510.
Z-80A
Z-80B
MIL-M-38510/480B
c828
tr c828
c877
ED6A
cm 480b
ed7a
c828 as time relay
iwatt marking
EB 13007
c828 equivalent
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KOMATSU
Abstract: No abstract text available
Text: Z508L0PS "ON 9NiMvaa ^-#Mm 1 D O F-O -2 1 2 E (0 3 .0 8 ? ±o. 10 20 30 40 50 60 70 80 90 100 jr %-n b m REV. DON DATE W. W. NO. 5 30.J un.2005 057G03 REDRAWN 6 18.J a n . 2008 064843 CORRECT NOTE a £ m ^ S DR. DESCRIPTION CHK. ERROR Y.TAKAGI Y.KUBOTA /X .
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Z508L0PS
057G03
T83-4
SJ018057
KOMATSU
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Untitled
Abstract: No abstract text available
Text: 6 l7 ?S £ 0 r$ ‘ ON 0N I M V b Q +0 .1 5 O 5 . 5 'S r-^ o .7 DO F - 0 - 2 1 2D< 9 8 . 02 o . 1 10 20 30 40 50 60 70 80 90 100 %-ñ B & & REV. DATE 2 2002.9.6 DCN w. n ft è D E S C R I P T I ON NO. 50584 a* Fnmm— 1 . Ü □ V 9 J j y\ — ( i V□ y 2
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DH01-P13S-HP1-BO
SJ035249
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN fcc4701 CMOS LSI LC33864P, M, PL, ML-70/80/10 i SA\YO 512 K 65536 words x 8 bits Pseudo-SRAM "S, Preliminary Overview Package D im ^ é lo n f”^ T he L C 33864 series is com posed o f pseudo static R A M unit: m m that operate on a single 5 V pow er supply and is organized
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fcc4701
LC33864P,
ML-70/80/10
V7777
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PDF
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feme a 001 24
Abstract: IC338 feme EFCH EN470 DIP32 LC338128M LC33864M LC33864P lc3381
Text: Ordering number : EN fcc4701 CMOS LSI LC33864P, M, PL, ML-70/80/10 i SA\YO 512 K 65536 words x 8 bits Pseudo-SRAM "S, Preliminary Overview Package D im ^ é lo n f”^ T he L C 33864 series is com posed o f pseudo static R A M unit: m m that operate on a single 5 V pow er supply and is organized
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LC33864P,
ML-70/80/10
LC33854
LC33864
32-pin
C777777/////////////////777
I/01-1/0Ã
feme a 001 24
IC338
feme
EFCH
EN470
DIP32
LC338128M
LC33864M
LC33864P
lc3381
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V53C256-80
Abstract: V53C256 1SD23
Text: 9502310 VITELIC CORP 98D 00 34 0 VITELIC VITELIC CORP Tfi TS0S310 D„ T -U 6 -2 3 -IS D00034D 4 V 5 3 C 2 5 6 FAMILY H IG H PERFORMANCE, LOW POWER 2 5 6 K X 1 B IT F A S T P A G E M O D E C M O S D Y N A M IC R A M * 70/70L 80/80L 10/10L 12/12L Max. RAS Access Time, t ^ ç
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TS0S310
D00034D
70/70L
V53C256
80/80L
10/10L
12/12L
V53C256L
3910N.
V53C256-80
V53C256
1SD23
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PDF
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PP506
Abstract: D23P HPI-307 PD80 PH302 SPS-501C-1 HPI-23F OD44L pp601 40 HPI-1K1
Text: — #->U 3 > P \ N $ l 7 * h £ f± «L it £ yi? % - R§ it ^ ^ ft ft 7 '„ = 25°C c r„ = 2 5 °c ) S 1| E v (lx ) Vk (V ) Iu m a x in A ' v k (V ) Xp t, Bi f$ -if ii£ % K Vu iM f-M * « * T„p, VH (V^ C T t y p (p F ) Vk (V ) (V i rc ) 10 m a x . 80
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OD44L
PD-64
PD-65
PD-66
pn-67
PD-67
HPI-23F
D-100
D-101
D-102
PP506
D23P
HPI-307
PD80
PH302
SPS-501C-1
HPI-23F
pp601 40
HPI-1K1
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Untitled
Abstract: No abstract text available
Text: IBM 0364404 C IBM 0364804 C IBM 0364164 C I =¥= = = = ’= P relim inary 64M b S yn ch ro n o u s DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -80 I i -10 CL=3 i I fcK ! C lo c k F re q u e n c y 1 1 2 5 I t;K C lo c k C ycle
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cycles/64ms
IBM0364404C
IBM0364804C
IBM0364164C
400mil;
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45418
Abstract: CMOS 4541 4541B
Text: Ordering number : EN 264541B CMOS LSI LC331632M-70/80/10/12 N o . * 4541B SAMYO 512 K 32768 words x 16 bits Pseudo-SRAM Preliminary Overview Package Dimensions T he L C 331632 series is com posed o f pseudo static RAM unit: mm th a t o p e r a te on a s in g le 5 V p o w e r s u p p ly an d a re
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4541B
LC331632M-70/80/10/12
LC331632
40-pin
45418
CMOS 4541
4541B
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