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    S PARAMETERS OF 5.8 GHZ TRANSISTOR Search Results

    S PARAMETERS OF 5.8 GHZ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    S PARAMETERS OF 5.8 GHZ TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4862g

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ STA-5063 is a general purpose class A amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically designed as a driver amplifier for WLAN 802.11a and


    Original     		STA-5063 OT-36lifier EDS-102990 4862g PDF

    4862G

    Abstract: SIRENZA MARKING
    Text: Preliminary Product Description Sirenza Microdevices’ STA-5063 is a general purpose class A amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically designed as a driver amplifier for WLAN 802.11a and


    Original     		STA-5063 OT-36lifier EDS-102990 4862G SIRENZA MARKING PDF

    MGF4921AM

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		MGF4921AM MGF4921AM PDF

    MGF4921AM

    Abstract: 5442
    Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		MGF4921AM MGF4921AM 15ric 5442 PDF

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		MGF4921AM MGF4921AM PDF

    STA-5063Z

    Abstract: 5.8ghz 802.11a Amplifier land pattern for 0402 cap MMIC 5.8ghz SIRENZA MARKING SOT-363 transistor amplifier 3 ghz STA-5063 T50Z
    Text: Product Description Sirenza Microdevices’ STA-5063Z is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically


    Original     		STA-5063Z OT-363 STA-5063Z EDS-102990 5.8ghz 802.11a Amplifier land pattern for 0402 cap MMIC 5.8ghz SIRENZA MARKING SOT-363 transistor amplifier 3 ghz STA-5063 T50Z PDF

    T50Z

    Abstract: dk42 recommended land pattern for 0402 cap STA-5063Z STA-5063 S64QAM 802.11a Amplifier dRIVER AMPLIFIER AT 5GHz STA5063Z SIRENZA MARKING
    Text: Product Description Sirenza Microdevices’ STA-5063Z is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically


    Original     		STA-5063Z OT-363 STA-5063Z EDS-102990 T50Z dk42 recommended land pattern for 0402 cap STA-5063 S64QAM 802.11a Amplifier dRIVER AMPLIFIER AT 5GHz STA5063Z SIRENZA MARKING PDF

    4.7kohm resistor

    Abstract: STA-5063
    Text: Product Description Sirenza Microdevices’ STA-5063 is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically


    Original     		STA-5063 OT-363 STA-5063 EDS-102990 4.7kohm resistor PDF

    s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ STA-5063 is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically


    Original     		STA-5063 EDS-102990 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ PDF

    MGF4921AM

    Abstract: transistor GaAs FET low noise 4Ghz
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Ｍar./2009 MGF4921AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4921AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.


    Original     		MGF4921AM MGF4921AM transistor GaAs FET low noise 4Ghz PDF

    transistor u8 2w

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with


    Original     		SZP-5026Z EDS-105366 SZP-5026Z" SZP-5026Z* SZP-5026Z-EVB1 SZP-5026Z-EVB2 35GHz SOF-26 transistor u8 2w PDF

    AT-60585

    Abstract: AT60585 Silicon Bipolar Transistor Silicon Bipolar Transistor Hewlett-Packard 3BS transistor
    Text: HE W LET T-PACKARD/ CMPNTS blE D • 44475Ö4 □ D D tìflb4 3bS H H P A AT-60585 Up to 6 GHz Low Noise Silicon Bipolar Transistor T h a t HEW LETT mLEM PA C K AR D 85 Plastic Package Features • • Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz


    OCR Scan     		44475A4 AT-60585 AT-60585 AT60585 Silicon Bipolar Transistor Silicon Bipolar Transistor Hewlett-Packard 3BS transistor PDF

    T1R rf

    Abstract: No abstract text available
    Text: Data Sheet NESG7030M04 R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz


    Original     		NESG7030M04 R09DS0037EJ0100 T1R rf PDF

    TRANSISTOR ph 618

    Abstract: transistor 911 TRANSISTOR 618 BFQ33C 1383 transistor BFQ33 transistor 1005 2G
    Text: Philips Semiconductors Product specification BFQ33C NPN 12 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE ]> 711DÔ5t. G0H543T 5b7 • P H I N PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-stripline envelopes, primarily


    OCR Scan     		OT173 OT173X BFQ33C G0H543T figure076 711DfiEfci TRANSISTOR ph 618 transistor 911 TRANSISTOR 618 BFQ33C 1383 transistor BFQ33 transistor 1005 2G PDF

    TRANSISTOR ML6

    Abstract: No abstract text available
    Text: bb53T31 0031772 E7T * A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T> PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures


    OCR Scan     		bb53T31 BFQ270 OT172A1 TRANSISTOR ML6 PDF

    s3331

    Abstract: No abstract text available
    Text: Hi bbSBTBl 0031SSD flM7 M A P X Philips S em iconductors Product specification NPN 12 GHz wideband transistor BFQ33C N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes, primarily


    OCR Scan     		0031SSD BFQ33C OT173 s3331 PDF

    ATC600L

    Abstract: CGH55030F2 ATC600S CGH55030 CGH55030P2 CGH5503 cree driver CGH40025F CGH55030-TB CGH55
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 ATC600L ATC600S CGH55030 CGH5503 cree driver CGH40025F CGH55030-TB CGH55 PDF

    Transistor 8c4

    Abstract: amplifier TRANSISTOR 12 GHZ js t31 sA 673 transistor TRANSISTOR 618 transistor 1248 BFQ33C TRANSISTOR 12 GHZ GQH543T TRANSISTOR BO 345
    Text: Philips Sem iconductors Product specification BFQ33C NPN 12 GHz wideband transistor PHILIPS INT ERNATIONAL DESCRIPTION SbE ]> 711DÔ5t. G Ü H 5 4 3 T 5 b7 • P H I N PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-slripline envelopes, primarily


    OCR Scan     		BFQ33C 711Dfi5t. GQH543T OT173 OT173X OT173X. Transistor 8c4 amplifier TRANSISTOR 12 GHZ js t31 sA 673 transistor TRANSISTOR 618 transistor 1248 BFQ33C TRANSISTOR 12 GHZ TRANSISTOR BO 345 PDF

    TRANSISTOR ML6

    Abstract: TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor Philips 2222 344 capacitors resistor 240
    Text: Philip^emiconductor^^ • bb53T31 GG3177E E7T ■ A P X ^Productspeclflcatlon NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES h^Z » AUER PHILIPS/DISCRETE PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures


    OCR Scan     		DD3177E BFQ270 OT172A1 OT172A1. TRANSISTOR ML6 TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor Philips 2222 344 capacitors resistor 240 PDF

    mje 1303

    Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    OCR Scan     		NE680 NE68Q NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B mje 1303 transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 15T09 model RB-30 S PT 100 PDF

    TRANSISTOR 618

    Abstract: BFQ33C UCD117 BFQ33 sot173and
    Text: fcj fci SBTBl Philips S em iconductors 0 0 3 1 SSG AM? M APX Product specification BFQ33C NPN 12 GHz wideband transistor T> N AMER P H I L I P S / D I S C R E T E DESCRIPTION PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173and SOT173X micro-stripline envelopes, primarily


    OCR Scan     		DG31SSG BFQ33C OT173and OT173X OT173. OT173X. TRANSISTOR 618 BFQ33C UCD117 BFQ33 sot173and PDF

    CGH55030P2

    Abstract: CGH5503 CGH55030 CGH55030F2 CGH55030-TB JESD22
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 PDF

    CGH55030F2

    Abstract: No abstract text available
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 PDF

    CGH55030F2

    Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE PDF