GEZ DIODE
Abstract: 4-KD20 GEZ 26 42kD
Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)
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-KD20
4-KD20
2-KD20
62-KD20
42-KD20
GEZ DIODE
GEZ 26
42kD
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GEZ DIODE
Abstract: GEZ 26 2-KD20 "Temperature Switch" 2kd20 Diode KD 202 KD 310 Diode KD 6 17 gez 8.5 diode 54kd
Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)
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-KD20
4-KD20
2-KD20
62-KD20
42-KD20
GEZ DIODE
GEZ 26
"Temperature Switch"
2kd20
Diode KD 202
KD 310
Diode KD 6 17
gez 8.5 diode
54kd
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j535
Abstract: 5353A RG 8506 5354B regulator ic 8503 5355B
Text: Zener Regulator Diodes P a rt N u m b er M ic ro s e m i Package O u tlin e D iv is io n 1N 4962US JA N 1 N 4 9 6 2 JA N 1 N 4 9 6 2 U S JA N S 1 N 4 9 6 2 JA N S 1 N 4 9 6 2 U S JA N T X 1 N 4 9 6 2 JA N T X 1 N 4 9 6 2 U S JA N T X V 1 N 4 9 6 2 JA N T X V 1 N 4 9 6 2 U S
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4962US
UZ4716
UZ5716
UZ5816
1N5353B
BG5353B
1N4963
4963US
ZEN-119
j535
5353A
RG 8506
5354B
regulator ic 8503
5355B
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DIODE0603
Abstract: diode 0603 16kv diode CPDUR5V0 smd diode code 39 diode smd marking 51
Text: c o A tc m r SMD ESD Protection Diode S M D D io d e s S p e c ia lis t CPDUR S e r i e s R o H s Device Features (16kV) IEC 6 1 0 0 0 -4 -2 rating. S urface m ount package. 0 6 0 3 (1 6 0 8 ) High c o m p o n e n td e n s ity . 0 .0 7 1 (1 .8 0 ) 0 .0 6 3 (1 .6 0 )
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MIL-STD-750
CPDUR12V:
CPDUR24V:
CPDUR36V:
CPDUR12V
CPDUR24V
CPDUR36V
DIODE0603
diode 0603
16kv diode
CPDUR5V0
smd diode code 39
diode smd marking 51
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CP50Q-OP5COSL
Abstract: S042 QP160SLC tmlh TnD 1214 1
Text: OPTEK TECHNOLOGY INC OLE I> | 1,7*10500 OGDOlOt. 7 | O p to e le c tr o n ic s D iv is io n T R W Electronic Components Group Product Bulletin S042 Janu ary 1985 G a A s Plastic Infrared Em ittin g Diodes Types O P 1 6 Q S L , O P 1 6 Q S L D , Q P 1 6 0 S L C , Q P 1 6 0 S L B , 0 P 1 6 0 S L A
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OP16QSL,
OP16QSLD,
QP160SLC,
QP160SLB,
0P160SLA
100/J
7500b
CP50Q-OP5COSL
S042
QP160SLC
tmlh
TnD 1214 1
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CPDU5V0
Abstract: 029 smd diode CPDU12V CPDU24V CPDU36V
Text: COAiCHir SMD ESD Protection Diode S M D D io d e s S p e c ia lis t CPDU Series R o H s D e vic e Features (16kV) IEC 6 1 0 0 0 -4 -2 rating. S urface m ount package. 0 6 0 3 (1 6 0 8 ) 0 .0 7 1 (1 .8 0 ) 0 .0 6 3 (1 .6 0 ) High c o m p o n e n td e n s ity .
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MIL-STD-750,
CPDU12V
CPDU24V
CPDU36V
CPDU5V0
029 smd diode
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diodes FRED U , = 8 - 582 A V Type RRM 1 @ T1c 'FAV U rms vF *FSM 10 m s @ t rr 'f m a x. 4 5 °C Irm @ -d i/d t typ. T vjm = 1 5 0 °C V A V A °C ^"v JM A ► D S E I 6 -0 6 A S 600 6 125 16 65 1.3 8 35 2.5 D S E I 8 -0 6 A D S E I 8 -0 6 A S
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BAT31
Abstract: microwave varactor diode x band varactor diode 1N4885 varactor ghz BAY96 varactor diode capacitance range SOD-31 Diode BAY96 BXY56
Text: Microwave solid state book 1 part 8 D e s c r ip tio n D ra w in g re fe re n ce T ype No. O u tlin e multiplier varactor diodes 25 6 55 N 1 .5 6 45 1 0 0 m in . S O D -3 1 N 1 .0 6 25 120 S O D -3 1 N 0 .7 5 6 20 150 150 9 5 3 1.6 1 .0 0 .6 5 0 .4 6 6 6 6
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BAY96
BXY27
OD-31
BXY28
BXY29
CXY10
OD-46
BAT31
microwave varactor diode
x band varactor diode
1N4885
varactor ghz
varactor diode capacitance range
SOD-31
Diode BAY96
BXY56
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1N6066 thomson
Abstract: lpp 68 g1 don connex 6064A 1N6036
Text: S G S —THOMSON S'ìC 59C ^ T H O M S O 02625 D 1I 7^ 237 GGG2b25 D 7 > //-£3 ’ N - C S F 1 1 M 6 0 3 6 ,A — DIVISION SEMICONDUCTEURS ► 1 IM 6 0 7 2 ,A BIDIRECTIONAL TR A N S IE N T V O L T A G E S U P P R E S S O R S DIODES DE PROTECTION BIDIRECTIONNELLES
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GGG2b25
/8-20/isexpo
1NB071
1N6066 thomson
lpp 68 g1
don connex
6064A
1N6036
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321 tlt 131
Abstract: diode 1n 5645 GE 5663 tube 5662A 1N5629A 0B2 tube 1N5647 1N5637A 1N5631 marking 5651 diodes
Text: S 'ìC S —T H O M S O N 59C 02612 T H O M S O N - C S F O 1 D D N 5 6 2 7 ^ 5 3 7 I □ □ ü S fc .lE T ~ //~ 9 , A — ► 1 N 5 6 6 5 , A DIVISION SEMICONDUCTEURS UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DE PROTECTION UNIDIRECTIONNELLES TRANSIL
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kW/8-20
C---175
321 tlt 131
diode 1n 5645
GE 5663 tube
5662A
1N5629A
0B2 tube
1N5647
1N5637A
1N5631
marking 5651 diodes
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74LS674
Abstract: No abstract text available
Text: M MOTOROLA SN54LS/74LS673 SN54LS/74LS674 D E S C R IP T IO N — T he S N 5 4 L S /7 4 L S 6 7 3 and S N 5 4 L S /7 4 L S 6 7 4 are 3 -s ta te 1 6 -b it s h ift registers. T he L S 6 7 3 is a 1 6 -b it s h ift re g is te r and a 1 6 -b it sto ra g e re g is te r in a
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Y0-Y15
LS673
LS674
P0-P15
74LS674
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74als166
Abstract: 54ALS166 SN74ALS166
Text: PRODUCT PREVIEW SN54ALS166, SN74ALS166 PARALLEL LOAD 8-BIT SHIFT REGISTERS D 2 6 6 1 , APRIL 1 9 8 2 -R E V 1 S E D M A Y 1 9 8 6 Synchronous Load S N 5 4 A L S 1 6 6 . . . J P AC K A G E S N 7 4 A L S 1 6 6 . . . D OR N P AC KAG E • Direct Overriding Clear
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SN54ALS166,
SN74ALS166
300-m
54ALS166
74ALS166
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transistor S196
Abstract: SN74196 LS196 SN74197 SN54196 SN54197 SN54LS196 SN54LS197 SN54S197 SN74LS196
Text: S N 54196, S N 54197, SN54LS196, SN54LS197, S N 54S 196, SN54S197, S N 74196, S N 74197, SN74LS196, SN74LS197, SN 74S 196, SN74S197 50/30f10D MHz PRESETTABLE DECADE OR BINARY COUNTERS/LATCHES SDLS077 OCTOBER 1 9 7 6 — REVISED M A R C H 19 8 8 S N 5 4 1 9 6 . S N 54L S 19 6 , S N 5 4 S 1 9 6 ,
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SDLS077
SN54196,
SN54197,
SN54LS196,
SN54LS197,
SN54S19B,
SN54S197,
SN74196,
SN74197,
SN74LS196,
transistor S196
SN74196
LS196
SN74197
SN54196
SN54197
SN54LS196
SN54LS197
SN54S197
SN74LS196
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I960
Abstract: 6DA4A
Text: T E N T A T IV E DATA 6DA4A TUNGSOL DIODE UNI P O T E N T I A L CATHODE HEA TE R 6 .3 * 0 .6 VOLTS 1 . 2 AMP. ANY MOUNTING P O S I T I O N SOCKET P IN S NOT 6 E U S E D 1, AS 2 , >* & 6 MUS T T I E POINTS. SHORT G L A S S B UL B INTERMEDIATE SH ELL 5 P I N OCTAL
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525-LINE,
I960
6DA4A
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Untitled
Abstract: No abstract text available
Text: M M O T O R O L A D E S C R IP T IO N — The S N 5 4 L S /7 4 L S 6 6 8 and S N 5 4 L S /7 4 L S 6 6 9 are s y n c h ro n o u s 4 -b it u p /d o w n c o u n te rs . The LS 6 6 8 is a decade c o u n te r and th e L S 6 6 9 is a 4 - b it b in a ry co u n te r. For h ig h speed c o u n tin g
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes 1 6 X 16 matrix displays LM-2256 Series T h e L M -2 2 5 6 s e rie s a re 1 6 X 1 6 m a • E x t e r n a l d im e n s io n s U nit: m m t r ix d is p la y s w h ic h c a n b e u s e d in a w id e v a rie ty o f a p p lic a tio n s , in c lu d in g
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LM-2256
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74ls668
Abstract: 74LS66 54LS74LS669
Text: M MOTOROLA D E S C R I P T I O N — T h e S N 5 4 L S / 7 4 L S 6 6 8 a n d S N 5 4 L S / 7 4 L S 6 6 9 a re SN54LS/74LS668 SN54LS/74LS669 s y n c h ro n o u s 4 -b it u p /d o w n c o u n te rs . T h e L S 6 6 8 is a d e c a d e c o u n te r a n d th e L S 6 6 9 is a 4 -b it b in a ry c o u n te r. For h ig h speed c o u n tin g
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SN54LS/74LS668
SN54LS/74LS669
74ls668
74LS66
54LS74LS669
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1sr156-100
Abstract: No abstract text available
Text: $ < ^ — K / D io d e s 1SR156-100/1SR156-200/1SR156-400 1 S R 1 5 6 - 1 0 0 / 1 S R 1 5 6 - 2 0 0 / 1 S R 1 5 6 - 4 0 0 MSS't1 (Under Development) ->') =i K Silicon Diffused Junction High-Speed Rectifying Diodes • W f ÿ 'T / ilS I / Dim ensions (Unit : mm)
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1SR156-100/1SR156-200/1SR156-400
1sr156-100
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Untitled
Abstract: No abstract text available
Text: Y/ Light Emitting Diodes -Y LUM-2568ML353 LU M-2568ML353 • LU M -2 5 6 8 M L 3 5 3 H77 7 t y h, 1 6 X 1 6 K-y h T h yh 1 6 X 1 6 Dot Matrix Unit Dimensions Unit : mm & ! T ' i 5 1 6 X 1 6 K y t-Th U t I T 'T o ‘J, i T o H ffl LSI =i > S P - 7 l i , U £ 211 # *# ^ , S S ( C * # a * ,
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LUM-2568ML353
M-2568ML353
LUM-2568ML353
16X16
200mm.
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C617C
Abstract: LS367A
Text: fZ 7 ^ 7 # S C S -T H O M S O N T 7 4 L S 3 6 5 A /3 6 6 A T 7 4 L S 3 6 7 A /3 6 8 A 3-STATE HEX BUFFERS DESCRIPTION These devices are high-speed Hex Buffers with 3state outputs. They are organized as single 6-bit or 2-bit/4-bit, with inverting or non-inverting data D
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/367A
/368A
74LS365A
/366A
/368A
C617C
LS367A
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Untitled
Abstract: No abstract text available
Text: Q S FC T646T, 648T, 2646T, 2648T Q High Speed CMOS 8-bit Bus Interface Register Transceivers Q S 5 4 /7 4 F C T 6 4 6 T Q S 5 4 /7 4 F C T 6 4 8 T Q S 5 4 /7 4 F C T 2 6 4 6 T Q S 5 4 /7 4 F C T 2 6 4 8 T F E A T U R E S /B E N E F IT S • Pin and function compatible to the 74F646/8
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QSFCT646T,
2646T,
2648T
QS54/74FCT646T
QS54/74FCT648T
QS54/74FCT2646T
QS54/74FCT2648T
74F646/8
74FCT646/8
74FCT646T/8T
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SN5406
Abstract: SN5416 SN74 SN7406 SN7416 SN741s inverter schematic diagram SDL-S031
Text: SN540G, SN5416, SN7406, SIU7416 HEX INVERTER BUFFERS/DRIVERS WITH OPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS SDLS031 DECEMBER 1983 —REVISED MARCH 1988 Converts TTL Voltage Levels to M O S Levels S N 5 4 0 6 , S N 5 4 1 6 . . . J OR W PACKAGE S N 7 4 0 6 , S N 7 4 1 6 . . . N PACKAGE
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SDLS031
SN54QG,
SN5416,
SN7406,
SIU7416
sn5406.
sn5416
sn7416
SN5406
SN5416
SN74
SN7406
SN7416
SN741s
inverter schematic diagram
SDL-S031
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6SN7
Abstract: No abstract text available
Text: SN 5 4 L S0 6 , SN54LS1 6, S N 7 4 L S0 6 , S N 7 4 L S 1 6 HEX I NV ER T ER B U F F E R S / D R I V E R S WITH OPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS S D LS 020A - MAY 1990 SN54LS06, SN54LÔ1 6 . . . J PACKAGE SN74LS06, SN74LS16 . . . D OR N PACKAGE * C o n v e r t s TTL Vol tage L eve l s to MOS
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SN54LS1
300-mi
SN54LS06,
SN54L
SN74LS06,
SN74LS16
6SN7
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Untitled
Abstract: No abstract text available
Text: 7*12^237 D04bSS3 452 M SG TH SGS-THOMSON üO T ô*S STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 6 0 N 0 5 -1 6 S T P 6 0 N 0 6 -1 6 • . • . ■ . . V dss R d S ( o ii Id 50 V 60 V < 0 .0 1 6 Q < 0 .0 1 6 a 60 A
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D04bSS3
STP60N05-16
STP60N06-16
LAMPDRIV80
TP60N
STP60N05-16/STP60N06-16
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