Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2312 N-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z DC/DC Converters z Load Switching for Portable Applications 1. GATE 2. SOURCE 3. DRAIN MARKING: S12 Maximum ratings (Ta=25℃ unless otherwise noted)
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OT-23
CJ2312
OT-23
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marking ss14
Abstract: ss14 do-214ac SS14 marking SS15 sma ss14 sma SS15 SS16 ss12 marking ss14 do-214ac sma SS13
Text: LESHAN RADIO COMPANY, LTD. SS12 – SS16 1A 1A SCHOTTKY SMA DIODES TYPE Marking SS12 SS13 SS14 SS15 SS16 20 30 40 50 60 S12 S13 S14 S15 S16 V F V IF (A) VRRM(V) 0.50 0.50 0.50 0.70 0.70 1.0 IRMI(µA) IP8M(A) 1000 Package Dimensions Trr(ns) – – – –
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214AC
-SS15
50mVp-p
marking ss14
ss14 do-214ac
SS14
marking SS15 sma
ss14 sma
SS15
SS16
ss12 marking
ss14 do-214ac sma
SS13
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S12 MARKING DIODE
Abstract: S12 MARKING CODE DIODE SOD882 BAP55L
Text: BAP55L Silicon PIN diode Rev. 01 — 5 April 2005 Preliminary data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small plastic SMD package. 1.2 Features • High speed switching for RF signals ■ Low diode capacitance
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BAP55L
OD882
sym006
S12 MARKING DIODE
S12 MARKING CODE DIODE
SOD882
BAP55L
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S12 MARKING CODE DIODE
Abstract: ND102 s12 diode
Text: ND102 Semiconductor Antenna Switching Diode Features • Low capacitance : Max.0.4pF • Low series resistance : rs= 1.0Ω Typ. @IF=10mA • UHF/VHF Band RF Switch Applications Ordering Information Type No. Marking Package Code ND102 S SOD-923 Outline Dimensions
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ND102
OD-923
KSD-D6E006-001
S12 MARKING CODE DIODE
ND102
s12 diode
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ND102M6L
Abstract: S12 MARKING DIODE triple-band antenna switch
Text: ND102M6L Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]
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ND102M6L
12PDFN
KSD-D5H003-001
Rev00
ND102M6L
S12 MARKING DIODE
triple-band antenna switch
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Untitled
Abstract: No abstract text available
Text: ND102M4L Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]
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ND102M4L
12PDFN
KSD-D5H001-000
Rev00
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S12 MARKING CODE DIODE
Abstract: No abstract text available
Text: ND102M4AL Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]
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ND102M4AL
12PDFN
KSD-D5H002-002
Rev01
S12 MARKING CODE DIODE
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ND102M4L
Abstract: No abstract text available
Text: ND102M4L Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]
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ND102M4L
12PDFN
KSD-D5H001-000
Rev00
ND102M4L
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Untitled
Abstract: No abstract text available
Text: ND102M6L Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]
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ND102M6L
12PDFN
KSD-D5H003-001
Rev00
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4 channel 1 package type antenna switching diode array
Abstract: S12 MARKING CODE DIODE ND102M4AL
Text: ND102M4AL Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]
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ND102M4AL
12PDFN
KSD-D5H002-001
Rev01
4 channel 1 package type antenna switching diode array
S12 MARKING CODE DIODE
ND102M4AL
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Untitled
Abstract: No abstract text available
Text: ND102M4AL Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]
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ND102M4AL
12PDFN
KSD-D5H002-002
Rev01
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A5 DIODE
Abstract: A6 DIODE DIODE A6 A4 diode k6 diode k1 diode A3 DIODE S12 MARKING DIODE K4 diode KSD-D5H003-000
Text: ND102M6L Semiconductor Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]
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ND102M6L
12PDFN
KSD-D5H003-000
Rev00
A5 DIODE
A6 DIODE
DIODE A6
A4 diode
k6 diode
k1 diode
A3 DIODE
S12 MARKING DIODE
K4 diode
KSD-D5H003-000
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tvs diode marking code fo
Abstract: semtech tvs SOT23-6L Marking Code s12 S12 MARKING CODE DIODE
Text: _ SMS05 l* ? < 5 F M tjWji T F P H A ugust 28, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 T E L 8 0 5 -4 9 8 -2 1 11 F A X :805-498-3804 W E B :http://w w w .sem tech.com DESCRIPTION FEATURES The SM S series of TVS arrays are designed to protect
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SMS05
SMS24
OT23-6L
tvs diode marking code fo
semtech tvs
SOT23-6L Marking Code s12
S12 MARKING CODE DIODE
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marking code e6
Abstract: No abstract text available
Text: BAP55L Silicon PIN diode Rev. 2 — 5 September 2011 Preliminary data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small plastic SMD package. 1.2 Features and benefits High speed switching for RF signals
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BAP55L
OD882
sym006
BAP55L
marking code e6
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5v tvs
Abstract: SOT23-6L Marking Code S12 MARKING CODE DIODE
Text: m SMS05 I Today’s Results.Tomorrow^ Vision O ctober 28, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 T E L 8 0 5 -4 9 8 -2 1 11 F A X :805-498-3804 W E B :http://w w w .sem tech.com DESCRIPTION FEATURES The SM S series of T V S arrays are designed to protect
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SMS05
SMS24
OT23-6L
5v tvs
SOT23-6L Marking Code
S12 MARKING CODE DIODE
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telefunken ta 400
Abstract: transistor marking 4934
Text: S 787 T TELEFUNKEN Semiconductors N-channel dual gate MOS-fieldeffect tetrode. Depletion mode. Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner. Features D D D D Integrated gate protection diodes
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D-74025
telefunken ta 400
transistor marking 4934
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S12 MARKING DIODE
Abstract: S12 MARKING CODE DIODE diode marking s12 s12 diode BBY39
Text: Short-form product specification Philips Semiconductors Double variable capacitance diode BBY39 QUICK REFERENCE DATA APPLICATIONS • Electronic tuners in satellite TV systems. SYMBOL DESCRIPTION Vr continuous reverse voltage Tj operating junction temperature
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BBY39
S12 MARKING DIODE
S12 MARKING CODE DIODE
diode marking s12
s12 diode
BBY39
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S12 MARKING DIODE
Abstract: S12 MARKING CODE DIODE SDT12SF 15KV ksd2076
Text: SDT12SF Semiconductor TVS Diode Features • Transient protection for data lines to IEC61000-4-2 ESD 15KV(air), 8KV(contact ) • Small package for use in portable electronics • Low operating and clamping voltage Applications • Cellular Handsets and Accessories
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SDT12SF
IEC61000-4-2
OT-23F
KSD-2076-000
Un125
S12 MARKING DIODE
S12 MARKING CODE DIODE
SDT12SF
15KV
ksd2076
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w13 smd transistor
Abstract: No abstract text available
Text: S913T / S913TR / S913TRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage 2 1 Comment SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • • • • • • • • • Integrated gate protection diodes Low noise figure
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S913T
S913TR
S913TRW
OT-143
2002/95/EC
2002/96/EC
OT-143R
OT-343R
OT-143
w13 smd transistor
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marking S12
Abstract: S12 MARKING DIODE K 2078 S12 MARKING CODE DIODE 15KV SDT12S ksd2078
Text: SDT12S Semiconductor TVS Diode Features • Transient protection for data lines to IEC61000-4-2 ESD 15KV(air), 8KV(contact ) • Small package for use in portable electronics • Low operating and clamping voltage Applications • Cellular Handsets and Accessories
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SDT12S
IEC61000-4-2
OT-23
KSD-2078-000
marking S12
S12 MARKING DIODE
K 2078
S12 MARKING CODE DIODE
15KV
SDT12S
ksd2078
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Untitled
Abstract: No abstract text available
Text: S849T / S849TR Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage 2 Comments 1 MOSMIC - MOS Monolithic Integrated Circuit SOT-143 3 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure
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S849T
S849TR
OT-143
2002/95/EC
2002/96/EC
OT-143R
D-74025
02-May-05
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smd transistor 982 sot143
Abstract: No abstract text available
Text: S886T / S886TR Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage 2 Comments 1 MOSMIC - MOS Monolithic Integrated Circuit SOT-143 3 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure
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S886T
S886TR
OT-143
OT-143R
2002/95/EC
2002/96/EC
S886TR
smd transistor 982 sot143
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smd transistor sot 4404
Abstract: J51-20
Text: S849T / S849TR VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage 2 Comments 1 MOSMIC - MOS Monolithic Integrated Circuit SOT-143 3 1 Features • • • • • • • Integrated gate protection diodes Low noise figure
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S849T
S849TR
OT-143
OT-143R
S849TR
D-74025
06-Sep-04
smd transistor sot 4404
J51-20
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smd transistor 982 sot143
Abstract: No abstract text available
Text: S886T / S886TR VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage 2 Comments 1 MOSMIC - MOS Monolithic Integrated Circuit SOT-143 3 1 Features • • • • • • • Integrated gate protection diodes Low noise figure
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S886T
S886TR
OT-143
OT-143R
S886TR
D-74025
07-Sep-04
smd transistor 982 sot143
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