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    S12308 Price and Stock

    Anytek Technology Corporation Ltd HS1230810000G

    TERM BLOCK 3POS 45DEG 5.08MM PCB
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    DigiKey HS1230810000G Bulk 2,020
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    Interstate Connecting Components HS1230810000G
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    Anytek Technology Corporation Ltd HS1230800000G

    TERM BLOCK 3POS 45DEG 5.08MM PCB
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    DigiKey HS1230800000G Bulk 2,020
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    RS HS1230800000G Bulk 2,020
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    Interstate Connecting Components HS1230800000G
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    Amphenol Corporation HS12308100J0G

    HS12308100J0G-508 TB SP CL INTERLACE/T - Bulk (Alt: HS1230810000G)
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    Avnet Americas HS12308100J0G Bulk 2,020
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    Amphenol Corporation HS12308000J0G

    HS12308000J0G-508 TB SP CLA PARALLEL/T - Bulk (Alt: HS1230800000G)
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    Avnet Americas HS12308000J0G Bulk 2,020
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    Amphenol Corporation HS1230810000G

    Pluggable Terminal Blocks TB SP CL INTERLACE/T
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    Mouser Electronics HS1230810000G
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    Avnet Abacus HS1230810000G 16 Weeks 2,020
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    S12308 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    s12308

    Abstract: No abstract text available
    Text: SiHU7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHU7N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 s12308 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) • • • • • 0.6 9 Configuration


    Original     		SiHP7N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    tc 3086

    Abstract: s12308
    Text: SiHP7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) • • • • • 0.6 9 Configuration


    Original     		SiHP7N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 tc 3086 s12308 PDF

    s12308

    Abstract: SiA477EDJ ZENER 106B
    Text: SiA477EDJ Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) - 12 0.0140 at VGS = - 4.5 V 0.0160 at VGS = - 3.7 V 0.0190 at VGS = - 2.5 V 0.0330 at VGS = - 1.8 V - 12 - 12 - 12 - 12 34.7 nC PowerPAK SC-70-6L-Single


    Original     		SiA477EDJ SC-70-6L-Single SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 s12308 ZENER 106B PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7117DN www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7117DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    s12308

    Abstract: No abstract text available
    Text: Si1077X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.078 at VGS = - 4.5 V - 1.4 0.098 at VGS = - 2.5 V -1 0.130 at VGS = - 1.8 V -1 0.188 at VGS = - 1.5 V - 0.3 TrenchFET Power MOSFET Typical ESD Performance 2500 V


    Original     		Si1077X SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 s12308 PDF

    si1077

    Abstract: SOT-563
    Text: Si1077X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.078 at VGS = - 4.5 V - 1.4 0.098 at VGS = - 2.5 V -1 0.130 at VGS = - 1.8 V -1 0.188 at VGS = - 1.5 V - 0.3 TrenchFET Power MOSFET Typical ESD Performance 2500 V


    Original     		Si1077X SC-89 Si1077X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 si1077 SOT-563 PDF

    tc 3086

    Abstract: No abstract text available
    Text: SiHF7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHF7N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 tc 3086 PDF