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    S1787 Search Results

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    S1787 Price and Stock

    BUD Industries Inc KS-1787-MG

    SHELF SLIDING KEYBOARD ASSEMBLY
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    DigiKey KS-1787-MG Bulk 1
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    Mouser Electronics KS-1787-MG
    • 1 $200.2
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    Newark KS-1787-MG Bulk 8 1
    • 1 $208.21
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    RS KS-1787-MG Bulk 1
    • 1 $222.38
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    Master Electronics KS-1787-MG
    • 1 $206.35
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    Sager KS-1787-MG 7 1
    • 1 $247.55
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    BUD Industries Inc KS-1787-BT

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    DigiKey KS-1787-BT Bulk 1
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    Mouser Electronics KS-1787-BT 3
    • 1 $204.21
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    Newark KS-1787-BT Bulk 40 1
    • 1 $208.2
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    RS KS-1787-BT Bulk 1
    • 1 $222.38
    • 10 $191.24
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    Master Electronics KS-1787-BT
    • 1 $214.96
    • 10 $205.43
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    Sager KS-1787-BT 40 1
    • 1 $247.55
    • 10 $247.55
    • 100 $185.65
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    Altech Corporation MVS178-7,5-V

    PCB TERM BLK, 7.50MM, 8 POLE, FR
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    Altech Corporation MVS178-7,5-H

    PCB TERM BLK, 7.50MM, 8 POLE, TO
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    Mouser Electronics MVS178-7,5-H
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    Altech Corporation MVS178-7,62-V

    PCB TERM BLK, 7.62MM, 8 POLE, FR
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    Mouser Electronics MVS178-7,62-V
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    S1787 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S1787 Hamamatsu Si photodiode Plastic package photodiode with low dark current Original PDF
    S1787-04 Hamamatsu Photonics Si photodiode Original PDF
    S1787-04 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    S1787-05 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    S1787-06 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    S1787-07 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    S1787-08 Hamamatsu Photonics Si photodiode Original PDF
    S1787-08 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    S1787-12 Hamamatsu Photonics Si photodiode Original PDF

    S1787 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S1787

    Abstract: S1787-04 S1787-08 S1787-12
    Text: PHOTODIODE Si photodiode S1787 series Plastic package photodiode with low dark current S1787 series is a family of plastic package photodiodes that offer low dark current. Plastic package used is light-impervious, so no stray light can reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide


    Original
    S1787 S1787-04: S1787-08: S1787-12: SE-171 KSPD1038E01 S1787-04 S1787-08 S1787-12 PDF

    S1787

    Abstract: S1787-04 S1787-08 S1787-12 S178704
    Text: PHOTODIODE Siフォトダイオード S1787シリーズ 低暗電流プラスチックパッケージ受光素子 S1787シリーズは 暗電流を低く抑えたプラスチックパッケージのフォトダイオードです。 遮光性プラスチックパッケージのため、


    Original
    S1787 S1787-04: S1787-08: S1787-12: S1787-04 S1787-08 S1787-12 S1787 S1787-04 S1787-08 S1787-12 S178704 PDF

    S1787

    Abstract: S1787-04 S1787-08 S1787-12
    Text: PHOTODIODE Si photodiode S1787 series Plastic package photodiode with low dark current S1787 series is a family of plastic package photodiodes that offer low dark current. Plastic package used is light-impervious, so no stray light can reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide


    Original
    S1787 S1787-04: S1787-08: S1787-12: SE-171 KSPD1038E01 S1787-04 S1787-08 S1787-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode S1787 series Plastic package photodiode with low dark current S1787 series is a family of plastic package photodiodes that offer low dark current. Plastic package used is light-impervious, so no stray light can reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide


    Original
    S1787 S1787-04: S1787-08: S1787-12: SE-171 KSPD1038E01 PDF

    near IR photodiodes

    Abstract: S8745-01 S8558
    Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


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    KSPD0001E09 near IR photodiodes S8745-01 S8558 PDF

    S8558

    Abstract: No abstract text available
    Text: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 S2506-04 S4707-01 S5077


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    0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA PDF

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Text: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


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    00G2534 254nm 560nm 633nm G1125-02 G1126-02 G1127-02 G2119 G1745 G1746 S2216 02 S1863 PDF

    hamamatsu S875

    Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
    Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size


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    560nm 633nm 930nm S2386 S2386-18K S1133-01, S1133-11, S1087-01, G1118, G1738 hamamatsu S875 S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133 PDF

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


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    S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118 PDF

    S5557

    Abstract: S1087
    Text: Si Photodiodes Visible/Visible to IR Range, for General Photometry Type No. Dimensional O utline (P.50 to 52)/ W indow M aterial "1 Active Area Size (mm) Effective Spectral Response Range Area X Peak Sensitivity W avelength X,p (mm2) (nm) (nm) 320 to 730


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    S1087 S1133 S1087-01 S1787-12 S4011 S2833 S5493 S5627 S4011-02 S5557 PDF

    40664 SCR

    Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
    Text: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli­ cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.


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    -500B CR316 CR317 CR322 CR323 40664 SCR CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR PDF

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


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    S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13 PDF

    S1722-01

    Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
    Text: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR


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    S1721 S1722 S1722-01 S1722-02 S1863 S1863-01 S1723-04 S1723-08 S1723-06 S1723-05 S-1721 G1117 si7202 S2164-01 PDF

    S3407

    Abstract: SS493 S3407-01
    Text: Si Photodiodes Visible/Visible to ÍR Range, for General Photometry Type No. Dimensional Outline (P.50 to 53)/ Window Material *1 Effective Active Area Active Spectral Response Range Peak Sensitivity Wavelength X Xp Photo Sensitivity S (A/W) - - . - • - He-Ne


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    S1087 S1133 S1087-01 S1133-01 S1133-14 S1787-04 S1787-08 S1787-12 S3407-01 S6926 S3407 SS493 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si Photodiodes Visible/Visible to IR Range, for General Photometry Dimensional Active Effective Outline (P.48,49)/ Package Area Size Active Area Window Material (mm) (mm2) Type No. S1087 A/ 1.3X1.3 1.6 S1133 © /V 2.4X2.8 6.6 S 1087-01 ® /R 1.3X1.3


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    S1087 S1133 S1133-01 S1133-14 S1787-04 S1787-08 S1787-12 S4011 S2833 S5493 PDF

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


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    S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532 PDF

    S1133-02

    Abstract: S1133-05 lk 46 PD-60 S1133 S1133-03 S1133-12 S2357 D107-P PD61
    Text: - 258 - I £ typ.15 typ.15 typ.40 typ.1.15 _ - ? ÍJ i EV tlx 100 100 100 100 100 100 100 100 100 100 100 100 100 100 m 100 100 100 ÏD max ínA¡ 0.01 0.01 0.02 U.Ol 0.02 0.01 0.02 0.02 0.02 0.01 0.01 0.02 0.01 0.02 typ.D.Dl typ.0.01 typ.0.03 0.1 Vr V)


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    S2357 PD-60 PD-61 S1I33-11 S1133-03 PD-62 S1133-02 D-100 S1133-02 S1133-05 lk 46 PD-60 S1133 S1133-03 S1133-12 S2357 D107-P PD61 PDF

    GaP photodiode APD

    Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
    Text: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


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    S1087. S1087-01 G1115 G1116 G1117 G1118 G1120 G1126-02. S6801-01 S6926. GaP photodiode APD uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode PDF

    Untitled

    Abstract: No abstract text available
    Text: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current


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    0GG5532 560nm 633nm G1116 G1117 G1118 G1120 S1133, S1133-03, S1787 PDF

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


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    0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407 PDF

    IFR 840

    Abstract: IFR 730 S2386
    Text: Si Photodiodes ScM3Ctra> Packags Type No. ' : -i Hinge i, X I f - t»rm -‘hot-. füdk S6nsitiv‘iv Seaisitviiy S Ws\ E-lefigth Xp iiwh - to NEP iA/W) IPA? ' ÍPA) Time 1 Teiminai Shunt tr Capsjcitartee Resistance 101O 90% f i t Sh V-rí) V V M )V Vr =; tOonV


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    S2386, S2387 S2386-18K 15x16 10x10 S2336 IFR 840 IFR 730 S2386 PDF

    photodiode

    Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
    Text: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


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    G1115 G1116 G1117 G1118 G1120 G1126-02. S5107. S5139. S5343. S5344 photodiode schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE PDF

    S1190-01

    Abstract: No abstract text available
    Text: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800


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    G003b24 S2839 S1190-01 S1190-13 S1190-03 S2840 S1190 S2216-01 633nm 930nm S1190-01 PDF