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PEI Genesis AIB6US18-6PC CONN PLUG MALE 1POS SILVER CRIMP
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DigiKey	AIB6US18-6PC	Bulk	76		1	1 $114.42 10 $81.73 100 $58.38 1000 $58.38 10000 $58.38	Buy Now
JRH Electronics MS3456LS18-6P CONN PLUG MALE 1POS GOLD CRIMP
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DigiKey	MS3456LS18-6P	Box			1	1 $181.45 10 $181.45 100 $181.45 1000 $181.45 10000 $181.45	Buy Now
JRH Electronics MS3450LS18-6P CONN RCPT MALE 1POS GOLD CRIMP
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DigiKey	MS3450LS18-6P	Box			1	1 $170.02 10 $170.02 100 $170.02 1000 $170.02 10000 $170.02	Buy Now
JRH Electronics MS3456KS18-6P CONN PLUG MALE 1POS GOLD CRIMP
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DigiKey	MS3456KS18-6P	Box			1	1 $181.45 10 $181.45 100 $181.45 1000 $181.45 10000 $181.45	Buy Now
JRH Electronics MS3450LS18-6PW AE5 1C 1#4 PIN RECP
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DigiKey	MS3450LS18-6PW	Box			1	1 $170.02 10 $170.02 100 $170.02 1000 $170.02 10000 $170.02	Buy Now

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S186P Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
S186P	Vishay Intertechnology	Silicon PIN Photodiode	Original	PDF
S186P	Vishay Telefunken	Silicon PIN Photodiode	Original	PDF
S186P	Vishay Telefunken	Photodiode, Module, 0.1uSec, 30nA	Original	PDF
S186P	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
S186P	Telefunken Electronic	Photo Detectors / Phototransistors / Photo Pin Diodes	Scan	PDF

S186P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: S186P Vishay Telefunken Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm .	Original	S186P S186P D-74025 20-May-99	PDF
S186P Abstract: No abstract text available Text: S186P Vishay Semiconductors Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm .	Original	S186P S186P D-74025 20-May-99	PDF
S186P Abstract: No abstract text available Text: S186P Vishay Semiconductors Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters λ p ≥ 900 nm .	Original	S186P S186P 08-Apr-05	PDF
S186P Abstract: No abstract text available Text: S186P Vishay Semiconductors Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters λ p ≥ 900 nm .	Original	S186P S186P 2002/95/EC 2002/96/EC 08-Apr-05	PDF
S186P Abstract: 820nM Text: S186P Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm . The large active area combined with a flat case gives a	Original	S186P S186P D-74025 15-Jul-96 820nM	PDF
S186P Abstract: 8409 diode Text: TELEFUNKEN Semiconductors S 186 P Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters	Original	S186P D-74025 8409 diode	PDF
S186P Abstract: No abstract text available Text: S186P Vishay Semiconductors Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters λ p ≥ 900 nm .	Original	S186P S186P 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: S186P Vishay Telefunken Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm .	Original	S186P S186P D-74025 20-May-99	PDF
S186P Abstract: No abstract text available Text: S186P Vishay Telefunken Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm .	Original	S186P S186P D-74025 20-May-99	PDF
S186P Abstract: No abstract text available Text: S186P Vishay Telefunken Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm .	Original	S186P S186P D-74025 20-May-99	PDF
S186P Abstract: No abstract text available Text: S186P Vishay Semiconductors Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters λ p ≥ 900 nm .	Original	S186P S186P 2002/95/EC 2002/96/ECs D-74025 08-Mar-05	PDF
near IR sensors with daylight filter Abstract: light sensing circuit project BPW34 application note BPW20RF Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm	Original	TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 2002/95/EC. 2011/65/EU. JS709A near IR sensors with daylight filter light sensing circuit project BPW34 application note BPW20RF	PDF
BPW34 application note Abstract: No abstract text available Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°	Original	VSMS3700 VEMT3700 J-STD-020 VSMS3700 AEC-Q101 2002/95/EC 2002/95/EC. 2011/65/EU. JS709A BPW34 application note	PDF
BPW20RF Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation	Original	BPV11 2002/95/EC 2002/96/EC BPV11 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW20RF BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g	PDF

BPW46 Abstract: BPW34 osram Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power	Original	VSLB3940 2002/95/EC 2002/96/EC VSLB3940 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW46 BPW34 osram	PDF
tept5600 response time Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000 Text: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily	Original	emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000	PDF
Leader 8020 schematics Oscilloscope Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents	Original	vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s	PDF
BPW34 application note Abstract: photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R Text: VISHAY Vishay Semiconductors Measurement Techniques Introduction Characteristics of optoelectronics devices given in data sheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be	Original	14-Apr-04 BPW34 application note photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R	PDF
BPW41 circuit application Abstract: OSRAM IR emitter Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability	Original	VSMG3700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMG3700 2002/95/EC. 2011/65/EU. JS709A BPW41 circuit application OSRAM IR emitter	PDF
BPW34 application note Abstract: APPLICATION NOTE BpW34 BPW41 remote control Text: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability	Original	VSMF3710 VSMF3710 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 BPW34 application note APPLICATION NOTE BpW34 BPW41 remote control	PDF
IR LED 790 nm Abstract: IR LED 800 nm BPV23NF TSMS1000 PH 40 E BPW34 application S186P 11 NM 65 N TSAL7600 BPV10NF Text: VISHAY VISHAY INTERTECHNOLOGY, INC. Vishay Semiconductors PIN PHOTODIODES and FILTER OPTIONS A Device B Package C Photo Sensitive Area / mm2 D E F ±Ê Ira / ÌA G Recommended IR Emitters PIN Photodiodes without Filter - General Application BPV10 A 0.78 20°	Original	BPV10 BPW34 BPW46 TEMD5000 TSHF5200 BPV22NF TSHF5400 BPV23NF TSFF5200 VHN-SG2401-0110 IR LED 790 nm IR LED 800 nm BPV23NF TSMS1000 PH 40 E BPW34 application S186P 11 NM 65 N TSAL7600 BPV10NF	PDF
OSRAM IR emitter Abstract: BPW34 application note solar cell transistor infrared lux meter calibration application luxmeter Text: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability	Original	VSMG2700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A OSRAM IR emitter BPW34 application note solar cell transistor infrared lux meter calibration application luxmeter	PDF
S186P Abstract: No abstract text available Text: T em ic S186P S e m i i' o n d u f t îi r s Silicon PIN Photodiode Description S 186 P is a h ig h sp ee d a n d h ig h se n sitiv e P IN p h o to d io d e in a flat sid e v ie w p la stic p a ck a g e . T h e e p o x y p a ck a g e it s e lf is an IR filter, sp e c tra lly m a tc h e d to G a A s o r G a A s	OCR Scan	S186P 4S415 15-Jul-96 S186P	PDF
BPW 64 photo Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na Text: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package	OCR Scan	BPW16N BPW17N BPW85C BPW96C BPV11 BPV23FL TESS5400 900nm) BPW 64 photo BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na	PDF

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PEI Genesis AIB6US18-6PC

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S186P Datasheets (5)

S186P Datasheets Context Search

Untitled

S186P

S186P

S186P

S186P

S186P

S186P

Untitled

S186P

S186P

S186P

near IR sensors with daylight filter

BPW34 application note

BPW20RF

BPW46

tept5600 response time

Leader 8020 schematics Oscilloscope

BPW34 application note

BPW41 circuit application

BPW34 application note

IR LED 790 nm

OSRAM IR emitter

S186P

BPW 64 photo