S1AM Search Results

S1AM Result Highlights (5)

Part	Manufacturer	Description
L77DA15S1AMNRM6	Amphenol Communications Solutions	Dsub, Machined signal 7.5A, Right Angle PCB Thru Hole, FP=10.3mm, Cnt Row Spacing 2.54mm, Cnt Tail 0.6mm, 15 Socket, Bright Tin Shell, Flash Gold, 3.1mm (0.122 in) Clear Hole, Metal R/A Bracket With Boardlock
L77DFE09S1AMN	Amphenol Communications Solutions	Dsub, Machined signal 7.5A, Right Angle PCB Thru Hole, FP=10.3mm, Cnt Row Spacing 2.54mm, Cnt Tail 0.6mm, 09 Socket, Bright Tin Shell, 0.38m (15 in) Gold, 3.1mm (0.122 in) Clear Hole, Metal R/A Bracket Without Boardlock
L177DFEG09S1AMN	Amphenol Communications Solutions	Dsub, Machined signal 7.5A, Right Angle PCB Thru Hole, FP=10.3mm, Cnt Row Spacing 2.54mm, Cnt Tail 0.6mm, 09 Socket, Bright Tin Shell, 0.76um (30u\\) Gold, M3 Threaded Rear Insert, Metal R/A Bracket Without Boardlock
L77DEH09S1AMN	Amphenol Communications Solutions	Dsub, Machined signal 7.5A, Right Angle PCB Thru Hole, FP=10.3mm, Cnt Row Spacing 2.54mm, Cnt Tail 0.6mm, 09 Socket, Bright Tin Shell, Flash Gold, 4-40 Threaded Rear Insert, Metal R/A Bracket Without Boardlock
L77DAG15S1AMN	Amphenol Communications Solutions	Dsub, Machined signal 7.5A, Right Angle PCB Thru Hole, FP=10.3mm, Cnt Row Spacing 2.54mm, Cnt Tail 0.6mm, 15 Socket, Bright Tin Shell, Flash Gold, M3 Threaded Rear Insert, Metal R/A Bracket Without Boardlock

S1AM Price and Stock

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Vishay Semiconductors ES1A-M3-61T DIODE GEN PURP 50V 1A DO214AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ES1A-M3-61T	Digi-Reel	13,128		1	1 $0.37 10 $0.246 100 $0.37 1000 $0.12858 10000 $0.12858	Buy Now
	ES1A-M3-61T	Cut Tape	13,128		1	1 $0.37 10 $0.246 100 $0.37 1000 $0.12858 10000 $0.12858	Buy Now
	ES1A-M3-61T	Reel	7,200		1,800	1 - 10 - 100 - 1000 - 10000 $0.08752	Buy Now
Telemechanique Sensors XXS18S1AM12 ULTRASONIC SENSORS XX, ULTRASONI
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DigiKey	XXS18S1AM12	Box			1	1 $381.29 10 $381.29 100 $381.29 1000 $381.29 10000 $381.29	Buy Now
Mouser Electronics	XXS18S1AM12					1 $345.57 10 $345.56 100 $345.56 1000 $345.56 10000 $345.56	Get Quote
Newark	XXS18S1AM12	Bulk			1	1 $377.36 10 $354.72 100 $354.72 1000 $354.72 10000 $354.72	Buy Now
RS	XXS18S1AM12	Bulk		4 Weeks	1	1 $368.08 10 $368.08 100 $368.08 1000 $368.08 10000 $368.08	Get Quote
APEM Inc 4R282S1AM5500 JOYSTICK RESISTIVE 4000
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DigiKey	4R282S1AM5500	Bulk			5	1 - 10 $563.134 100 $563.134 1000 $563.134 10000 $563.134	Buy Now
RS	4R282S1AM5500	Bulk		16 Weeks	5	1 - 10 $491.8 100 $491.8 1000 $491.8 10000 $491.8	Get Quote
Master Electronics	4R282S1AM5500					1 - 10 $408.8 100 $408.8 1000 $408.8 10000 $408.8	Buy Now
Amphenol Communications Solutions L77DB25S1AMNVF CONN D-SUB RCPT 25POS R/A SLDR
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DigiKey	L77DB25S1AMNVF	Tray			200	1 - 10 - 100 - 1000 $8.71945 10000 $8.71945	Buy Now
Newark	L77DB25S1AMNVF	Bulk			200	1 - 10 - 100 $8.11 1000 $7.87 10000 $7.87	Buy Now
Amphenol Communications Solutions L177DCH37S1AMN CONN D-SUB RCPT 37POS R/A SLDR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	L177DCH37S1AMN	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	L177DCH37S1AMN	Bulk			200	1 - 10 - 100 $13.84 1000 $13.44 10000 $13.44	Buy Now

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S1AM Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
S1A M2G	Taiwan Semiconductor	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 50V 1A DO214AC	Original	PDF
S1A-M3/5AT	Vishay Semiconductor Diodes Division	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GPP 1A 50V DO-214AC	Original	PDF
S1A-M3/61T	Vishay Semiconductor Diodes Division	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GPP 1A 50V DO-214AC	Original	PDF

S1AM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RF1K49093 Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396 Text: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI	Original	PDF	RF1K49093 RF1K49093 1e-30 61e-4 09e-6) 10e-3 99e-6) 82e-3 47e-7) AN7254 AN9321 AN9322 MS-012AA RF1K4909396
Untitled Abstract: No abstract text available Text: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge	Original	PDF	FDB070AN06A0 FDP070AN06A0 O-220AB O-263AB
AN9321 Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334 Text: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the	Original	PDF	HUF76113DK8 AN9321 AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
FQP45N03L Abstract: FQP45N03 Text: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves	Original	PDF	FQP45N03L 1450pF O-220AB FQP45N03L FQP45N03
75631P Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334 Text: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE	Original	PDF	HUFA75631P3, HUFA75631S3ST O-220AB O-263AB HUFA75631P3 75631P AN9321 HUFA75631P3 HUFA75631S3ST TB334
ITF86182SK8T Abstract: MS-012AA TB370 Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V	Original	PDF	ITF86182SK8T MS-012AA) ITF86182SK8T MS-012AA TB370
AN7254 Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06 Text: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives	Original	PDF	RFF70N06 MIL-S-19500. 150oC TA49007. AN7254 AN7260 AN9321 AN9322 RFF70N06 RFG70N06
7n10l Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334 Text: RFD7N10LE, RFD7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes	Original	PDF	RFD7N10LE, RFD7N10LESM 7n10l 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
76639p Abstract: HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2 Text: HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 39P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76639P3 HUF76639S3S D rpor on, A, 0V, 27 m, ann gic	Original	PDF	HUF76639P3, HUF76639S3S O-220AB HUF76639P3 76639p HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2
Untitled Abstract: No abstract text available Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998	Original	PDF	RFF60P06 RFF60P06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms;
sma diode marking sm vishay Abstract: No abstract text available Text: S1A-M3, S1B-M3, S1D-M3, S1G-M3, S1J-M3, S1K-M3, S1M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop	Original	PDF	DO-214AC J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 sma diode marking sm vishay
RELAY 4088 Abstract: TB334 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L Text: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet Title FD1 06L D14 6LS P14 6L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using	Original	PDF	RFD14N06L, RFD14N06LSM, RFP14N06L RELAY 4088 TB334 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L
AN9321 Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334 Text: HUFA76413D3, HUFA76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76413D3S HUFA76413D3	Original	PDF	HUFA76413D3, HUFA76413D3S O-251AA O-252AA HUFA76413D3 AN9321 HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
FD3055 Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A Text: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve	Original	PDF	RFD3055, RFD3055SM, RFP3055 TA49082. 175oC TB334 FD3055 Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A

AN9321 Abstract: HUFA75823D3 HUFA75823D3S HUFA75823D3ST TB334 27e5 Text: HUFA75823D3, HUFA75823D3S Data Sheet November 2000 File Number 4965 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75823D3S HUFA75823D3 Features	Original	PDF	HUFA75823D3, HUFA75823D3S O-251AA O-252AA HUFA75823D3 75823D AN9321 HUFA75823D3 HUFA75823D3S HUFA75823D3ST TB334 27e5
AN7254 Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334 Text: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI	Original	PDF	RF1K49154 AN7254 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
HUF76445P3 Abstract: HUF76445S3S HUF76445S3ST TB334 Text: HUF76445P3, HUF76445S3S Data Sheet October 1999 File Number 4676.3 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 45P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76445P3 HUF76445S3S D rpor on, ann gic vel raF wer	Original	PDF	HUF76445P3, HUF76445S3S O-220AB HUF76445P3 HUF76445P3 HUF76445S3S HUF76445S3ST TB334
75307 Abstract: 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334 Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	PDF	HUF75307P3, HUF75307D3, HUF75307D3S 75307 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
75337 Abstract: 75337P HUFA75337G3 HUFA75337P3 HUFA75337S3S HUFA75337S3ST TB334 Text: HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet November 2000 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	PDF	HUFA75337G3, HUFA75337P3, HUFA75337S3S 75337 75337P HUFA75337G3 HUFA75337P3 HUFA75337S3S HUFA75337S3ST TB334
75307 Abstract: 75307d transistor 75307D HUFA75307D3 HUFA75307D3S HUFA75307D3ST HUFA75307P3 TA75307 TB334 UFA7 Text: HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet November 2000 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs Title UFA7 07P3, UFA7 07D3, UFA7 07D3 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology	Original	PDF	HUFA75307P3, HUFA75307D3, HUFA75307D3S 75307 75307d transistor 75307D HUFA75307D3 HUFA75307D3S HUFA75307D3ST HUFA75307P3 TA75307 TB334 UFA7
76423P Abstract: 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13 Text: HUFA76423P3, HUFA76423S3S Data Sheet November 2000 File Number 4980 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76423P3 HUFA76423S3S	Original	PDF	HUFA76423P3, HUFA76423S3S O-220AB O-263AB HUFA76423P3 76423P 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13
59E-1 Abstract: AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337 Text: HUF75309T3ST Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.3 Features • 3A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the	Original	PDF	HUF75309T3ST 59E-1 AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337
76633s Abstract: 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407 Text: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76633P3 HUF76633S3S	Original	PDF	HUF76633P3, HUF76633S3S O-220AB O-263AB HUF76633P3 76633s 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407
76629D Abstract: AN9321 HUF76629D3 HUF76629D3S HUF76629D3ST TB334 4692 Text: HUF76629D3, HUF76629D3S Data Sheet October 1999 File Number 4692.3 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 29D Packaging JEDEC TO-251AA 0V, 54 m, A, GATE SOURCE DRAIN FLANGE HUF76629D3 HUF76629D3S wer OSF ) utho eyw	Original	PDF	HUF76629D3, HUF76629D3S O-251AA HUF76629D3 76629D AN9321 HUF76629D3 HUF76629D3S HUF76629D3ST TB334 4692

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S1AM Search Results

S1AM Result Highlights (5)

S1AM Price and Stock

Vishay Semiconductors ES1A-M3-61T

Telemechanique Sensors XXS18S1AM12

APEM Inc 4R282S1AM5500

Amphenol Communications Solutions L77DB25S1AMNVF

Amphenol Communications Solutions L177DCH37S1AMN

S1AM Datasheets (3)

S1AM Datasheets Context Search

RF1K49093

Untitled

AN9321

FQP45N03L

75631P

ITF86182SK8T

AN7254

7n10l

76639p

Untitled

sma diode marking sm vishay

RELAY 4088

AN9321

FD3055

AN9321

AN7254

HUF76445P3

75307

75337

75307

76423P

59E-1

76633s

76629D