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    S21 SOT23 Search Results

    S21 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
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    S21 SOT23 Price and Stock

    Nexperia BAS21,215

    Small Signal Switching Diodes DIODE-SML SIGNAL SOT23/TO-236A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAS21,215 Reel 3,357,000 3,000
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    • 1000 -
    • 10000 $0.0156
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    Nexperia BAS21,235

    Small Signal Switching Diodes DIODE-SML SIGNAL SOT23/TO-236A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAS21,235 Reel 390,000 10,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0138
    		Buy Now

    S21 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 CJ2321 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 CJ2321 OT-23

    358 MARKING SOT23-3

    Abstract: k 0538 transistor marking WV2 BFQ67W
    Text: Not for new design, this product will be obsoleted soon BFQ67 / BFQ67R / BFQ67W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT23 Features • • • • • Small feedback capacitance Low noise figure e3 High transition frequency Lead Pb -free component


    Original     		PDF BFQ67 BFQ67R BFQ67W 2002/95/EC 2002/96/EC OT323 OT-23 358 MARKING SOT23-3 k 0538 transistor marking WV2 BFQ67W

    sot-23 transistor p2 marking

    Abstract: marking amplifier j02 marking code 604 SOT23
    Text: Not for new design, this product will be obsoleted soon BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT23 Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component


    Original     		PDF BFR92A BFR92AR BFR92AW 2002/95/EC 2002/96/EC OT323 OT-23 sot-23 transistor p2 marking marking amplifier j02 marking code 604 SOT23

    SGA-6425

    Abstract: A64 sot23-5
    Text: Preliminary Product Description SGA-6425 Stanford Microdevices’ SGA-6425 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 5.0V, this RFIC uses the


    Original     		PDF SGA-6425 SGA-6425 50-ohm OT23-5 DC-2500 EDS-100971 A64 sot23-5

    sot23 A63

    Abstract: DC-3000 SGA-6325 A63 marking amplifier 100970
    Text: Preliminary Product Description SGA-6325 Stanford Microdevices’ SGA-6325 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 4.9V, this RFIC uses the


    Original     		PDF SGA-6325 SGA-6325 50-ohm OT23-5 DC-3000 EDS-100970 sot23 A63 A63 marking amplifier 100970

    TRANSISTOR MARKING A53

    Abstract: marking A53 mmic SGA-5325 EDS-100967 amplifier gain 36 dB
    Text: Preliminary Product Description SGA-5325 Stanford Microdevices’ SGA-5325 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 3.5V, this RFIC uses the


    Original     		PDF SGA-5325 SGA-5325 50-ohm OT23-5 DC-3200 EDS-100967 TRANSISTOR MARKING A53 marking A53 mmic amplifier gain 36 dB

    SGA-5425

    Abstract: DC-2400
    Text: Preliminary Product Description SGA-5425 Stanford Microdevices’ SGA-5425 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 3.3V, this RFIC uses the


    Original     		PDF SGA-5425 SGA-5425 50-ohm OT23-5 DC-2400 EDS-100968

    transistor marking a62

    Abstract: SOT23 MARKING A62
    Text: Preliminary Product Description SGA-6225 Stanford Microdevices’ SGA-6225 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 4.0V, this RFIC uses the


    Original     		PDF SGA-6225 SGA-6225 50-ohm OT23-5 DC-3500 EDS-100969 transistor marking a62 SOT23 MARKING A62

    Micro-X Marking 865

    Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original     		PDF NE021 NE02107 NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B NE02135 NE02139-T1 Micro-X Marking 865 Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F

    s-parameter s11 s12 s21

    Abstract: 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s


    Original     		PDF NE021 NE02135 NE02139 NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02139-T1 s-parameter s11 s12 s21 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431

    NE686

    Abstract: NE698M01 NE698M01-T1 S21E 8 pin ic 5916 ic 4072 transistor s11 s12 s21 s22 TRANSISTOR K 2191 8427 transistor
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE698M01 OUTLINE DIMENSIONS Units in mm HIGH fT: 17 GHz TYP at 2 V, 7 mA • LOW NOISE FIGURE: NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA • HIGH GAIN: |S21E|2 = 15.5 dB TYP at f = 2 GHz


    Original     		PDF NE698M01 NE698M01 NE686) OT363 24-Hour NE686 NE698M01-T1 S21E 8 pin ic 5916 ic 4072 transistor s11 s12 s21 s22 TRANSISTOR K 2191 8427 transistor

    8F157

    Abstract: relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s


    Original     		PDF NE021 NE02135 NE02139 07/07B NE02133" NE02133 8F1573FD7D76BE9F795396E6F54D44. 30-Sep-2010 8F157 relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D

    NE02135

    Abstract: NE021 microwave oscillator 2SC2149 2SC2351 NE021 NE02100 NE02107 NE02133 NE02139 MICROWAVE TRANSISTOR
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original     		PDF NE021 NE021 NE02107 NE2100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 24-Hour NE02135 NE021 microwave oscillator 2SC2149 2SC2351 NE02100 NE02133 NE02139 MICROWAVE TRANSISTOR

    transistor bf 968

    Abstract: No abstract text available
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O


    Original     		PDF NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968

    mje 1303

    Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 NE68039-T1 NE68039R-T1 mje 1303 transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000

    BFR520

    Abstract: 900MHZ
    Text: BFR520 NPN 9 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope.


    Original     		PDF BFR520 OT-23 BFR520 06-Feb-07 OT-23 900MHZ

    transistor BF 697

    Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
    Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE


    Original     		PDF NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507

    cq 636 g transistor

    Abstract: No abstract text available
    Text: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


    OCR Scan     		PDF BFS17A cq 636 g transistor

    8115, transistor

    Abstract: BFR106 0482 transistor SD-1H 702 P TRANSISTOR
    Text: P hilipsSemiconducìors M 7 1 1 D fl2 b D O b ^ ltib EDÔ H P H IN Product specification NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NFN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications.


    OCR Scan     		PDF 711Dfl2b BFR106 MS6003 8115, transistor 0482 transistor SD-1H 702 P TRANSISTOR

    E2p 96 transistor

    Abstract: BFS17 BFS17A MSB003
    Text: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


    OCR Scan     		PDF 711Dflgb BFS17A MSB003 E2p 96 transistor BFS17

    MARKING CODE 42t

    Abstract: Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 BFT93W FC 0137
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures


    OCR Scan     		PDF BFT93W OT323 BFT93W BFT93. MBCB70 OT323. MARKING CODE 42t Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 FC 0137

    Philips FA 564

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures


    OCR Scan     		PDF BFT93W OT323 BFT93W BFT93. MBC870 OT323. 711002b. Philips FA 564

    E2p 93 transistor

    Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
    Text: Philips Sem iconductors m ^ 5 3 ^ 3 1 □DE5£5c1 TTS BIAPX N AMER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION fc,7E Product specification J> ^ BFS17A PINNING NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF


    OCR Scan     		PDF BFS17A E2p 93 transistor E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A