S2E TRANSISTOR Search Results

S2E TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

S2E TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TRANSISTOR FF75 Abstract: 1BW TRANSISTOR Text: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc T3 7 • U P E C Thermal properties DC, pro Baustein / per module	OCR Scan	34D32CI7 TRANSISTOR FF75 1BW TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: 7 -3 7 - 3 / FF 150 R 06 KL EUPEC S2E Transistor T> 34D32T7 Thermische Eigenschaften Transistor Rthjc Elektrische Eigenschaften 0GG0224 Bectrical properties RthCK Ö2S « U P E C Thermal properties 0,09 0,18 0,03 0,06 DC, pro Baustein / per module DC, pro Zweig / per arm	OCR Scan	34D32T7 0GG0224 34D32CI7	PDF
J975 Abstract: 1BW TRANSISTOR 733transistor Text: EUPEC S2E • 34032^7 000020b flOT » U P E C FF 75 R 10 K 7 =3 « / Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 75 A lc Thermische Eigenschaften Thermal properties DC, pro Baustein / per module	OCR Scan	000020b sat00 J975 1BW TRANSISTOR 733transistor	PDF
transistor 1BW 57 Abstract: IGBT EUPEC Text: FF 200 R 06 KF EUPEC S2E ]> G G 00232 TTl •UPEC Thermische Eigenschaften Thermal properties 0,08 °C/W Rthjc DC, pro Baustein / per module 0,16 °C/W DC, pro Zweig / per arm 0,03 °C/W RthCK pro Baustein/per module 0,06 °C/W Transistor Transistor Elektrische Eigenschaften	OCR Scan	GGG0232 transistor 1BW 57 IGBT EUPEC	PDF
Untitled Abstract: No abstract text available Text: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 T3 7 • U P E C Thermal properties DC, pro Baustein / per module	OCR Scan		PDF
LM12K Abstract: BRIDGE-RECTIFIER 5v 1A BRIDGE-RECTIFIER 15v LM12CK LM12CLK BRIDGE-RECTIFIER 100v 1a op amp 40v 100w LM12C LM12 BRIDGE-RECTIFIER operation Text: LM12 NATL SEMICOND LINEAR S2E D • bSOllEM 0DLÖE3H b T-79-23 National Semiconductor LM12 (L/C/CL) 150W Operational Amplifier General Description The LM12 is a power op amp capable of driving ±35V at ±10A while operating from ±40V supplies. The monolithic	OCR Scan	T-79Z3 TUH/8704-29 LM12K BRIDGE-RECTIFIER 5v 1A BRIDGE-RECTIFIER 15v LM12CK LM12CLK BRIDGE-RECTIFIER 100v 1a op amp 40v 100w LM12C LM12 BRIDGE-RECTIFIER operation	PDF
TRANSISTOR KT 838 Abstract: FF200 UTG 16 diode sg 5 ts Text: FF 200 R 06 KF EUPEC S2E ]> Rthjc Elektrische Eigenschaften Electrical properties V ces Maximum rated values 600 V 200 A RthCK lc G G 00232 Thermische Eigenschaften Transistor Transistor 3 4 0 3 2 *1 7 T T l •UPEC Thermal properties 0,08 0,16 0,03 0,06 DC, pro Baustein / per module	OCR Scan	GGG0232 34D32CI7 TRANSISTOR KT 838 FF200 UTG 16 diode sg 5 ts	PDF
LN800 Abstract: C2E1 F400 diode f400 Text: ^ 3 7 -3 / F 400 R 06 KF EUPEC S2E ]> 3M D 3ET7 D 0 D D 2 5 fl Thermische Eigenschaften Itansistor Transistor • Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A •c 1Q Ô B IU P E C Thermal properties	OCR Scan	D0DD25fl 34D32CI7 LN800 C2E1 F400 diode f400	PDF
LM12 Abstract: lm12 op amp ILM12 LM12 OP amp IC LM12CK OF IC 723 linear regulator LM12K Text: LM12 NATL SEMICOND LINEAR S2E D • bSOllEM 0DLÖE3H b T-79-23 National Semiconductor LM12 (L/C/CL) 150W Operational Amplifier General Description The LM12 is a power op amp capable of driving ±35V at ±10A while operating from ±40V supplies. The monolithic	OCR Scan	T-79-23 LM12 lm12 op amp ILM12 LM12 OP amp IC LM12CK OF IC 723 linear regulator LM12K	PDF
C4027 Abstract: SC 2262 2SD4027 2sc4027-applied 2SA1552 2SC4027 500mAIB Text: SANYO S E M I C O N D U C T O R CORP S2E D i m 07b O D 0 7 0 bQ 1 2SA1552, 2SC4027 T ' 33' ì l T-33'01 P N P /N P N Epitaxial Planar Silicon Transistors 2044 High-Voltage Switching Applications 2262B Applications . Converters, inverters, color TV audio output	OCR Scan	GQ070b0 2SA1552, 2SC4027 2SA1552/2SC4027-applied 2SA1552 C4027 SC 2262 2SD4027 2sc4027-applied 500mAIB	PDF
Untitled Abstract: No abstract text available Text: N T E ELECTRONICS INC S2E D bMaiSS^ PPPSäö^ C13Ö H N T E □ITS - TTL 1M I E G J TRANSISTOR TRANSISTOR LOGIC T -W 3 -Ô \| Low Rower, Dual, 4-BK Latch 24-Lead DIP, See Dlag 252 Low Power, 4—Bit Binary Counter 16-Lead DIP, See Dlag 249 Retriggerable Monostable Multivibrator	OCR Scan	24-Lead 16-Lead 14-Lead T-90-01	PDF
2SC4452 Abstract: QVC5 Q60H Text: SANYO SEMICONDUCTOR CORP S2E D 7=^707!= G Q 0 7 1 D 1 Q T-3S -0 ? 2SC4452 • N P N Epitaxial Planar Silicon Transistor 20S9 High-Speed Switching Applications 2811 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product	OCR Scan	G007101 2SC4452 -T-35-07 2SC4452-applied QVC5 Q60H	PDF
Untitled Abstract: No abstract text available Text: CALEX MANUFACTURING CO S2E D I IflllESG GDGIGBT 2^7 ICEX Models 166 and 167 Bridgesensors 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 BRIDGE POWER SUPPLY FAX: (510) 687-3333 7 1 -U -0 7 The bridge power supply is an adjustable regulated	OCR Scan		PDF
sj 2038 Abstract: 2SD444 ic sj 2038 ANI 1015 IC ti 072 2SC1443 2SA1685 2SC4443 C4443 M685 Text: SAN YO S E M I C O N D U C T O R CORP 2SA1685, 2SC4443 S2E D 7 cH 7 G 7 b OOD7D7Ö T T -3 7-09 ~r-3S-c~i * P N P /N P N Epitaxial Planar Silicon Transistors 2059 High-Speed Switching Applications 32öO F eatu res • Fast switching speed •High gain-bandwidth product	OCR Scan	0OG707Ã 2SA1685, 2SC4443 2SA1685 sj 2038 2SD444 ic sj 2038 ANI 1015 IC ti 072 2SC1443 C4443 M685	PDF

2n2222 to92 Abstract: PN2218 2N4970 Text: NATL SEtlICOND DISCRETE S2E D • NPN General Purpose Transistors by Ascending Part Type V c e o (V ) V c b o (V ) Min Min Min Max (mA/V) 180 110 500 500 500 800 500 500 400 600 400 200 100 200 600 600 2/4.5 2/4.5 2/4.5 2/4.5 2/4.5 2/4.5 10/10 2/10 2/10	OCR Scan	bSD1130 0D3777E T-21-0! MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS5172 2n2222 to92 PN2218 2N4970	PDF
NTE1171 Abstract: lg tv circuit diagrams Text: N T E EL EC T R 0 NICS bMBlSSI GGQ27MÖ S2E D INC • lg M24 * N T E »11 -X -T 7 -0 ' 8-Lead Metal Can, See Diag. 200 Phase-Frequency Detector, Vcc = TV OP Amp, Vcc = ±18V 14-Lead DIP, See Diag. 247 NTE1171 Top View Offset Null VH Output Non-Inverting Input	OCR Scan	GGQ27MÖ NTE1171 14-Lead 16-Lead lg tv circuit diagrams	PDF
Differential Pressure Transducer BHL Abstract: 1-8256 Text: CALEX MA N UF AC T UR I NG CO S2E lflllSSD D DD01G33 07^ B K EX Model 165 Bridgesensor 510 687-4411 (800) 542-3355 FAX: (510) 687-3333 FEATURES • No other Function Modules Needed. Just Add Power. • Under or Over Voltage Alarm Function Built-in. • Power Almost any Transducer with 4 to 10 Volt	OCR Scan	DD01G33 MK165 Differential Pressure Transducer BHL 1-8256	PDF
s2e transistor Abstract: NTE1016 NTE100 Text: N T E EL ECT RO NI CS INC S2E D b M a i S S 6 DDD573S Ö7b H N T E " T - ^7-0! A lid o Amp, 1W, Vcc » 16V Driver Bias 8-Lead Spacial DIP, S m Dtag. 257 f : Driver Vcc Bias Output Input GND* Input I Feedback Compensation Output GND* Feedback * NOTE: Connect to Tab	OCR Scan	DDD573S NTE1009 NTE1010 NTE1013 27MHz NTE1015 NTE1014 NTE1016 NTE1019 s2e transistor NTE100	PDF
Simple Circuit Diagram For Digital Weighing Scale Abstract: Digital Weighing Scale schematic MK166 Digital Weighing Scale bridge instrumentation amplifier weighing scale instrumentation amplifier with offset adjust Simple Circuit Diagram For Weighing circuit diagram load cell amplifier TRANSISTOR 4841 the Instrumentation amplifier with the bridge type transducer Text: CALEX MANUFACTURING CO S2E D I IflllESD G Q O I O B T 2^7 WMŒ X Models 166 and 167 Bridgesensors £ ± * 5 c _ 2401 Stanw ell Drive, Concord, C A 9 4 5 2 0 -4 8 4 1 5 1 0 6 8 7 -4 4 1 1 (8 0 0 ) 5 4 2 - 3 3 5 5 BRIDGE POWER SUPPLY FAX: (5 1 0 ) 6 8 7 -3 3 3 3 _	OCR Scan	7I-U-07 Simple Circuit Diagram For Digital Weighing Scale Digital Weighing Scale schematic MK166 Digital Weighing Scale bridge instrumentation amplifier weighing scale instrumentation amplifier with offset adjust Simple Circuit Diagram For Weighing circuit diagram load cell amplifier TRANSISTOR 4841 the Instrumentation amplifier with the bridge type transducer	PDF
2SK968 Abstract: 2SK9 Text: SANYO S E M I C O N D U C T O R CORP 2SK968 S2E D • 7 en ? ü 7 b ODQb'IbB 5 ■ T - 3 I .- Z S # N -C h a n n e l Junction Silicon FET 2065 High-Frequency General-Purpose Amp Applications F e a tu re s • Small-sized package p erm ittin g 2SK968-applied se ts to be m ade sm a lle r an d slim m er	OCR Scan	2SK968 2SK968-applied 2SK968 2SK9	PDF
2SA1344 Abstract: H7q7 2sc339 2SC3398 s2e transistor Text: SANYO SEMICONDUCTOR CORP 5SE D0Q73SÔ D 2SA1344. 2SC3398 b • T - 3 7 - 13 T - 3S-I\ PNP/NPN Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistances Rl=10ki2, R2=10kil 1236C Application! • Switching circuit, inverter circuit, interface circuit, driver circuit.	OCR Scan	2SA1344, 2SC3398 D0Q73SÃ T-37- T-35-H 1236C 10ki2, 10kfi, 10kii) 2SA1344 2SA1344 H7q7 2sc339 2SC3398 s2e transistor	PDF
1BW TRANSISTOR Abstract: No abstract text available Text: FF 25 R 06 KF SEE T> EUPEC Thermische Eigenschaften Transistor Transistor 34D32T7 OOQGlflb n i H U P E C Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 25 A RfhCK lc Thermal properties DC, pro Baustein/per module DC, pro Zweig /p e r arm	OCR Scan	34D32T7 34D32CI7 1BW TRANSISTOR	PDF
2SC3773 Abstract: SANYO SS 1001 Text: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band	OCR Scan	n707b 2SC3773 1946B 2SC3773 SANYO SS 1001	PDF
2SC2812 Abstract: k 2057 3v61 2SA1179 600S8 T29 marking marking AJR 2SC28 AJR MARKING Text: SANYO SEMICONDUCTOR CORP 7T=]707t. DDD7B^t EBE D 2SA1179, 2SC2812 1 T -Z 1-I5 P N P /N P N Epitaxial Planar Silicon Transistors 2018A Low-Frequency General-Purpose Amp Applications 3218 F e a tu re s •Small-sized package perm itting the 2SA1179/2SC2812-applied sets to be made small and slim	OCR Scan	2SA1179, 2SC2812 DDD73it T-29-/S 2SA1179/2SC2812-applied 2SA1179 2SC2812 k 2057 3v61 600S8 T29 marking marking AJR 2SC28 AJR MARKING	PDF

S2E TRANSISTOR Search Results

S2E TRANSISTOR Result Highlights (5)

S2E TRANSISTOR Datasheets Context Search

TRANSISTOR FF75

Untitled

J975

transistor 1BW 57

Untitled

LM12K

TRANSISTOR KT 838

LN800

LM12

C4027

Untitled

2SC4452

Untitled

sj 2038

2n2222 to92

NTE1171

Differential Pressure Transducer BHL

s2e transistor

Simple Circuit Diagram For Digital Weighing Scale

2SK968

2SA1344

1BW TRANSISTOR

2SC3773

2SC2812