1283310
Abstract: LB1807 lb1809 148781 front panel ls36 1-57748-0
Text: Minimate Range - S2L/B2L 3.5 Since conductors with cable sizes of up to 1 mm2 can be connected, the Minimate Range is a positive alternative to 2.5/2.54 mm pitch connectors. In particular because it uses up to 10% less space on the PCB. At the same time, due to its tension
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s2l 06
Abstract: LCP 2148 pcb connectors 1747940000 conexel S2L 92 Weidmuller 1630150001 1748550000 STRIP TEMPLATE SC
Text: Argentina Australia Austria Bahrain Belarus Belgium Brazil Bulgaria Canada Chile China Costa Rica Colombia Croatia Czech Republic Denmark Egypt Estonia Finland France Germany Greece Guatemala Honduras Hong Kong Hungary India Indonesia Iran Ireland Israel Italy
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0D22EI-c69945!
5627400000/03/2002/BKD
s2l 06
LCP 2148
pcb connectors
1747940000
conexel
S2L 92
Weidmuller
1630150001
1748550000
STRIP TEMPLATE SC
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WEIDM
Abstract: powermate
Text: Printed Circuit Board Connectors Many of our printed circuit board connectors are specialists. To help you to keep track of the variety, we have arranged our pin headers and socket blocks by their features. Weidmueller offers five different product families:
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s2l 78
Abstract: 281-1406-ND 281-1408-ND 281-1448-ND 12AWG 281-1414-ND Weidmuller BLZ 5.08 281-1943-ND 281-1181-ND 281-1849-ND
Text: p114-118 Weidmuller Term. Blk 3/6/06 10:01 AM Page 1 Terminal Blocks 6.2 4.4 8.3 Ø 1.3 16.75 Specifications: • Screw Clamp • UL: 300V @ 10A • 14AWG • Pin Length: 4.5mm Specifications: • Screw Clamp • UL: 300V @ 10A • 14AWG • Pin Length: 4.5mm
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p114-118
14AWG
12AWG
EU061)
s2l 78
281-1406-ND
281-1408-ND
281-1448-ND
12AWG
281-1414-ND
Weidmuller BLZ 5.08
281-1943-ND
281-1181-ND
281-1849-ND
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1250410
Abstract: 100352 BK SMK 1500 162554-000 PA66 - GF 25 relay
Text: Weidmüller – Partner in Industrial Connectivity 2 PCB terminal blocks, PCB connectors, panel feedthrough terminal blocks and electronics housings Catalogue 2013 Let’s connect. Catalogue 2013 OMNIMATE – device connectivity As experienced experts we support our customers and partners around the world
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1381510000/01/2013/SMDM
1250410
100352
BK SMK 1500
162554-000
PA66 - GF 25 relay
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CL31A
Abstract: CL05A
Text: August 2009 MULTILAYER CERAMIC CAPACITORS We, Samsung, declare that our component MLCC is produced in accordance with EU RoHS directive. 1. RoHS Compliance and restriction of Br The following restricted materials are not used in packaging materials as well as products in compliance with the law and restriction.
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kevin0130
CL31A
CL05A
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CL31A
Abstract: CL05A CL10B104KB8
Text: June 2009 Passive components Sales Office ● Head Office 206, Cheomdansaneop Road, Youngtong-gu, Suwon, Kyonggi Province 443- 743, Korea Europe Te l: +82-31-210 -6328 E-mail:[email protected] America Te l: +82- 31- 210 - 6794 E-mail:[email protected]
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kevin0130
CL31A
CL05A
CL10B104KB8
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Untitled
Abstract: No abstract text available
Text: Product Selection Matrix 3.50 m m p ilc h S2L/E52L 3.5 • 150 V 3.50 mm I 5.00 mm yes no p. 86 | no yes p. 86 I p. 106 p. 106 p. 107 p 107 yes SLA / BLA STV S/STW S • 300 V • 10 A • 22. .12 AWG •2 6 . 12 AWG 5.08 mm no Powermate Range • 300 V
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S2L/E52L
3C0-600
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Untitled
Abstract: No abstract text available
Text: DR A M M O D U L E KMM466F803BS2-L 8Mx64 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 DRAM M ODULE KM M 4 66 F 80 3B S2-L Revision History Version 0.0 (Sept, 1997) , Removed two AC parameters tCACP(access time from CAS) and tAAP(access tim e tro m col. addr.) in AC CHARACTERISTICS.
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KMM466F803BS2-L
8Mx64
KMM466F803BS2-L
8Mx64bits
466F803BS2-L
cycles/128ms,
150Max
KM48V8104BS-L
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APT5010B
Abstract: No abstract text available
Text: • 0 2 5 7 * 10 ^ DÜG22Q2 bTT APT5010B2VR ADVANCED POW ER Te c h n o lo g y 500V 47A 0.100Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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G22Q2
APT5010B2VR
MIL-STD-750
APT5010B
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zo 107 NA P 611
Abstract: BFR96 L 0403 817 BFR96T
Text: TEMIC BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain
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BFR96T
BFR96T
D-74025
31-Oct-97
zo 107 NA P 611
BFR96
L 0403 817
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Avantek amplifier uto 521
Abstract: transistor K 2937
Text: What HEW LETT mL'EM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 521 Series Features • Frequency Range: 5 to 500 MHz • High Gain: 30.0 dB Typ Applications • IF/RF Amplification Description Pin Configuration
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Untitled
Abstract: No abstract text available
Text: I Ordering number : ENN6578 NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions Features unit : mm • Low noise : NF=1.5dB typ f=2GHz . • High cut-off frequency : fx=10G H z typ (V cE =l V). 2 1 8 3
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ENN6578
EC3H07B
E-CSP1006-3
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kl SN 102 94-0
Abstract: WV2 marking marking WV2 Q 371 Transistor BFQ67WI
Text: TEMIC BFQ67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran sistor has superior noise figure and associated gain
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BFQ67W
20ges
D-74025
07-Nov-97
kl SN 102 94-0
WV2 marking
marking WV2
Q 371 Transistor
BFQ67WI
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temic 0675
Abstract: 7334
Text: Tem ic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. M RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure
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BFQ81
D-74025
31-Oct-97
temic 0675
7334
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f39e
Abstract: No abstract text available
Text: 0 N t e œ (D N “ I o - - tsd — — I 3 > - J 7. 2. ^ Z h . -— (HOLE' O l A 'O 'i FIG.3 j ;z: - 708-5302 F/ G, 2 *>DIH*i U^-C J £ > 'rc t> — - — I a. a n « a e m i* 6. « • A _ k o N . a c c u m u la t e ^ \ TOLERANCE f.sc 3125-'" *7 i» >- :7~c o S 3 S 5 - N Û . 2<t? Z3
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S2-L1UWG--20--
76272-iD
ECO-11-005030
f39e
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A738
Abstract: 2SC4926
Text: 2SC4926 Silicon NPN Epitaxial HITACHI Application V H F / U H F w ide band am plifier Features • H igh gain bandw idth product fT = ! I G H z Typ • H igh gain, low noise figure PG = 16.5 dB Typ, N F = I . I dB T yp at f = 900 M H z Outline 1. 2. 3. 4.
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2SC4926
A738
2SC4926
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • • Low Noise Figure, High Gain. NF —1.8dB, |S2lel2= 10dB f=2GHz + 0.2 2 .9 -0 -3 II -a MAXIMUM RATINGS (Ta = 25°C)
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2SC5097
--j50
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sem 2106
Abstract: TRANSISTOR 3856
Text: 2SC4317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r a 3 1 7 M F • V ■ m Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF - l.ldB , |S 2 ie l2 = 13dB f=lGHz + 0.5 2.5 -0.3 +0.25
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2SC4317
SC-59
a--25X
--j50
sem 2106
TRANSISTOR 3856
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Untitled
Abstract: No abstract text available
Text: Thal H E W L E T T mLEm P a c k a r d Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1058 Series F e a tu re s D escription Pin C onfiguration • Frequency Range: 5 to 1000 MHz The 1058 Scries is a 5-volt twostage, thin-film RF amplifier using
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packa245
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LM 3171
Abstract: IC LM 1246
Text: TOSHIBA 2SC4320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC432Q VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . NF - l.ld B , U nit in mm |S2lel2= 15dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL
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2SC4320
2SC432Q
Nois151
--j50
LM 3171
IC LM 1246
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IC 4011
Abstract: 2SC5092 4011 TOSHIBA
Text: TOSHIBA 2SC5092 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5092 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF —1.8dB, |S2lel2= 9-5dB f=2GHz + 0.2 2.9-0-3 II -a M A XIM U M RATINGS (Ta = 25°C)
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2SC5092
--j50
--20mA
IC 4011
2SC5092
4011 TOSHIBA
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2sc2952
Abstract: No abstract text available
Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 = -56 dBc, IM3 = -64 dBc NE24620 IM2= -63 dBc, IM3 = -72 dBc @ V o = 120 dB|iV/75 i l The NE246 is an NPN transistor designed for broadband
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NE24615
NE24620
iV/75
NE24600
NE24615
NE246
lS22l2,
4275c!
2sc2952
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MOLEX 5558 drawing
Abstract: 15mi
Text: 10 4 NOTES M A T ER IA L: S E E CH ART FINISH: S E E C H A R T P R O D U C T SPEC IF ICATION : PS - 5 5 5 6 - 0 0 1 , P S - 5 5 5 6 - 0 0 2 , P S - 5 5 5 6 - 0 0 5 . PA C K A G IN G S PEC IF ICAT IO N : P K - 5 5 5 8 - 0 0 1 FO R CHAIN P K - 5 5 5 6 - 0 0 3 FO R LO O S E
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PS-5556-001,
PS-5556-002,
PS-5556-003.
PK-5558-001
PK-5556-003
s22-28.
PS-45499-002.
SD-5558-002
MOLEX 5558 drawing
15mi
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