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    S2P02 MOSFET Search Results

    S2P02 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    S2P02 MOSFET Datasheets Context Search

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    S2P02

    Abstract: MMSF2P02E MMSF2P02ER2 SMD310
    Text: MOTOROLA Order this document by MMSF2P02E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMSF2P02E Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs


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    MMSF2P02E/D MMSF2P02E MMSF2P02E/D* S2P02 MMSF2P02E MMSF2P02ER2 SMD310 PDF

    S2P02

    Abstract: S2P02 mosfet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF2P02E Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field E ffect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface


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    MMSF2P02E S2P02 S2P02 mosfet PDF

    4221 motorola transistor

    Abstract: transistor ba rn S2P02
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMSF2P02E Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors ir M iniM OS™ devices are an advanced series of power MOSFETs which utilize Motorola's TMOS process. These miniature surface


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    MMSF2P02E 4221 motorola transistor transistor ba rn S2P02 PDF

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    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMSF2P02E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMSF2P02E Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs


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    MMSF2P02E/D MMSF2P02E PDF