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    SST39VF088-90-4C-EK

    Abstract: No abstract text available
    Text: 8 Mbit x8 Multi-Purpose Flash SST39VF088 EOL Data Sheet FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention


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    PDF SST39VF088 S71227 S71227-05-EOL S71227-05-EOL SST39VF088-90-4C-EK

    SST39VF088

    Abstract: No abstract text available
    Text: 8 Mbit x8 Multi-Purpose Flash SST39VF088 SST39VF0882.7V 8Mb (x8) MPF memories Preliminary Specifications FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original
    PDF SST39VF088 SST39VF0882 48-tsop-EK-8 48-LEAD S71227-02-000 SST39VF088

    ams telephone

    Abstract: No abstract text available
    Text: 8 Mbit x8 Multi-Purpose Flash SST39VF088 SST39VF0882.7V 8Mb (x8) MPF memories Preliminary Specifications FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original
    PDF SST39VF088 SST39VF0882 48-tsop-EK-8 48-LEAD S71227-03-000 ams telephone

    555H

    Abstract: SST39VF088
    Text: 8 Mbit x8 Multi-Purpose Flash SST39VF088 EOL Data Sheet FEATURES: TE • Fast Erase and Byte-Program – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical)


    Original
    PDF SST39VF088 48-lead S71227 S71227-05-EOL 555H SST39VF088

    555H

    Abstract: SST39VF088 1227
    Text: 8 Mbit x8 Multi-Purpose Flash SST39VF088 SST39VF0882.7V 8Mb (x8) MPF memory Preliminary Specifications FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original
    PDF SST39VF088 SST39VF0882 S71227-04-000 555H SST39VF088 1227