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    S9018 TRANSISTOR Search Results

    S9018 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    S9018 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S9018H

    Abstract: S9018G
    Text: MCC S9018 S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		S9018 S9018-G S9018-H S9018-I 31Watts -55OC S9018H S9018G PDF

    S9018H

    Abstract: transistor s9018h transistor S9018
    Text: MCC S9018 S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		S9018 S9018-G S9018-H S9018-I 31Watts -55OC S9018H transistor s9018h transistor S9018 PDF

    transistor s9018

    Abstract: S9018 to-92 S9018 S9018 transistor S9018* transistor S9018 TO92
    Text: S9018 S9018 TO-92 TRANSISTOR NPN FEATURES 1. EMITTER 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current ICM: 0.05 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		S9018 400MHz transistor s9018 S9018 to-92 S9018 S9018 transistor S9018* transistor S9018 TO92 PDF

    transistor s9018

    Abstract: S9018H
    Text: MCC TM Micro Commercial Components S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		S9018-G S9018-H S9018-I 31Watts -55OC S9018 100uAdc, transistor s9018 S9018H PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		S9018-G S9018-H S9018-I 31Watts -55OC S9018 100uAdc, PDF

    S9018G

    Abstract: S9018H
    Text: MCC TM Micro Commercial Components S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		S9018-G S9018-H S9018-I 31Watts -55OC S9018 S9018G S9018H PDF

    S9018H

    Abstract: No abstract text available
    Text: MCC S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		S9018-G S9018-H S9018-I 31Watts -55OC S9018 100uAdc, S9018H PDF

    transistor SOT23 J8

    Abstract: transistor S9018 S9018 SOT-23 S9018 J8 SOT23 S9018 transistor S9018 SOT23 S9018 J8 transistor S9018 G vebo 15v sot23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation. PC=200mW S9018 Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-23


    Original     		S9018 200mW) OT-23 BL/SSSTC085 transistor SOT23 J8 transistor S9018 S9018 SOT-23 S9018 J8 SOT23 S9018 transistor S9018 SOT23 S9018 J8 transistor S9018 G vebo 15v sot23 PDF

    S9018 transistor

    Abstract: S9018 transistor S9018 S9018 TO92 S9018 TO-92 S9018* transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S9018 TRANSISTOR NPN 1.EMITTER FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 2.BASE 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		S9018 400MHz S9018 transistor S9018 transistor S9018 S9018 TO92 S9018 TO-92 S9018* transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8


    Original     		OT-23 S9018 OT-23 400MHz PDF

    S9018

    Abstract: S9018 TO92
    Text: FORWARD INTERNATIONAL ELECTRONICS LID . S9018 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR Package: TO-92 OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=l 100MHz * High Total Power Dissipation: Pc=400mW


    OCR Scan     		S9018 100MHz 400mW BVcboTO-92 100uA S9018 S9018 TO92 PDF

    s9018 transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8


    Original     		OT-23 S9018 OT-23 400MHz s9018 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 S9018 TRANSISTOR NPN 1.EMITTER FEATURES z High Current Gain Bandwidth Product 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		S9018 PDF

    Untitled

    Abstract: No abstract text available
    Text: S9018 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR Package: TO-92 OF FM/VHF TUNER * High Current Gain Bandwidth Product fT =l 100MHz * High Total Power D issipation: Pc=400mW


    OCR Scan     		S9018 100MHz 400mW PDF

    S9018 transistor

    Abstract: S9018 transistor S9018 S9018* transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 3. COLLECTOR


    Original     		OT-23 S9018 OT-23 400MHz S9018 transistor S9018 transistor S9018 S9018* transistor PDF

    S9018 transistor

    Abstract: S9018 transistor S9018 DATASHEET Transistor BC107 S9018 datasheet
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S9018 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation. Collector-current 0.05A Collector-base Voltage 25V


    Original     		S9018 31Watts -55OC 10mAdc, 400MHz) S9018 transistor S9018 transistor S9018 DATASHEET Transistor BC107 S9018 datasheet PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors S9018 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current 0.05 A ICM: Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range


    Original     		S9018 400MHz PDF

    S9018

    Abstract: S9018 TO92
    Text: S9018 NPN TO-92 Bipolar Transistors 1. EMITTER 2. BASE TO-92 3. COLLECTOR Features High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage


    Original     		S9018 400MHz S9018 TO92 PDF

    1FR510

    Abstract: S9018 transistor S9018
    Text: S9018 N P N G eneral P u rp o se Transistors SOT-23 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOItage Collector Current-Continuous Unit Vdc Vdc Vdc mAdc Characteristics Total Device Dissipation FR-5 Board 1 T A -2 5 t


    OCR Scan     		TA-25 S9018 10mAdc. d00MH? 1FR510 transistor S9018 PDF

    S9018 SOT-23

    Abstract: s9018
    Text: S9018 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) — MARKING：J8 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		OT-23 S9018 OT-23 400MHz S9018 SOT-23 s9018 PDF

    S9018 transistor

    Abstract: S9018 S9018* transistor S9018 TO92
    Text: M C C TO-92 Plastic-EncapsuSate Transistors S9018 TRANSISTOR NPN FEATURES P cm; 0.31W (Tamb=25°C) Icm: 0.05 A V|8R)CB0: 25 V ► Junction tem perature range T j.T s tg : ELECTRICAL -5 5 “C to + 150°C CHARACTERISTICS (Tam b=25°C u n le s s o th e rw is e


    OCR Scan     		S9018 400MHz S9018 S9018 transistor S9018* transistor S9018 TO92 PDF

    transistor S9018

    Abstract: S9018
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components S9018 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		S9018 31Watts -55OC 100uAdc, transistor S9018 S9018 PDF

    S9018

    Abstract: transistor S9018
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S9018 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation. Collector-current 0.05A


    Original     		S9018 31Watts -55OC 100uAdc, 20Vdc, 15Vdc, 10mAdc, S9018 transistor S9018 PDF

    transistor S9018

    Abstract: s9018
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S9018 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation. Collector-current 0.05A


    Original     		S9018 31Watts -55OC 100uAdc, 20Vdc, 15Vdc, 10mAdc, transistor S9018 s9018 PDF