Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    S9G77A Search Results

    S9G77A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S9G77A Toshiba FET, Microwave Power GaAs FET Transistor, ID 3.5 A Scan PDF
    S9G77A Toshiba MICROWAVE POWER GaAs FET Scan PDF

    S9G77A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TO S H IB A MICROWAVE POWER GaAs FET Partially Matched S9G77A Preliminary MICROWAVE SEMICONDUCTOR TECHNICAL DATA 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB SYMBOL Ta= 25 °C CONDITION MIN. TYP, MAX. UNIT 32.0 PidB — • dBm —


    OCR Scan     		S9G77A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MI C RO WA V E P O W E R GaAs FET M IC RO WA VE SEMICONDUCTOR T E C H N I C A L DATA S9G77A FEATURES : • HI GH ■ PARTIALLY MATCHED POWER P idB = 33.0 dBm at 3 .7 G H z ■ HI GH ■HERMETI CALLY GAI N SEALED PACKAGE G 1dB = 10.5 dB at 3 .7 G H z


    OCR Scan     		S9G77A PDF

    S9G77A

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET Partially Matched TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA S9G77A Prelim inary 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB SYMBOL Ta= 25 °C CONDITION MIN. TYP, MAX. UNIT 32.0 PidB — dBm — Compression Point


    OCR Scan     		S9G77A S9G77A PDF