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    Rochester Electronics LLC BGSA142MN12E6327XTSA1

    IC RF SWITCH
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    Rochester Electronics LLC BGSA142M2N12E6327XTSA1

    IC RF SWITCH
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    Rochester Electronics LLC BGSA142GN12E6327XTSA1

    IC RF SWITCH
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    STMicroelectronics STEVAL-ISA142V1

    EVAL BOARD FOR L6564
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    Toshiba America Electronic Components 2SA1428-Y,T2F(J

    TRANS PNP 50V 2A MSTM
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    SA142 Datasheets (14)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    SA1420 NEL Frequency Controls 5 V,±100 ppm, CMOS crystal clock oscillator Original PDF
    SA-1420 NEL Frequency Controls Crystal Clock Oscillators, CMOS Original PDF
    SA1421 NEL Frequency Controls 5 V,±50 ppm, CMOS crystal clock oscillator Original PDF
    SA-1421 NEL Frequency Controls Crystal Clock Oscillators, CMOS Original PDF
    SA1427 NEL Frequency Controls 5 V,±25 ppm, CMOS crystal clock oscillator Original PDF
    SA-1427 NEL Frequency Controls Crystal Clock Oscillators, CMOS Original PDF
    SA1429 NEL Frequency Controls 5 V,customer specific, CMOS crystal clock oscillator Original PDF
    SA-1429 NEL Frequency Controls Crystal Clock Oscillators, CMOS Original PDF
    SA142A NEL Frequency Controls 5 V,±20 ppm, CMOS crystal clock oscillator Original PDF
    SA-142A NEL Frequency Controls Crystal Clock Oscillators, CMOS Original PDF
    SA142B NEL Frequency Controls 5 V,±50 ppm, CMOS crystal clock oscillator Original PDF
    SA-142B NEL Frequency Controls Crystal Clock Oscillators, CMOS Original PDF
    SA142C NEL Frequency Controls 5 V,±100 ppm, CMOS crystal clock oscillator Original PDF
    SA-142C NEL Frequency Controls Crystal Clock Oscillators, CMOS Original PDF

    SA142 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 PDF

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


    Original     		Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G PDF

    27e transistor

    Abstract: IBM "embedded dram" SA-27E SA-27 epbga ibm sram
    Text: Standard cell/gate array value ASIC for high-function, high-density applications Blue Logic SA-27E ASIC Highlights Embedded DRAM with integrated built-in self test and redundancy Copper metallurgy for price/ performance in sub-0.18 µm logic process 0.11 µm effective channel length


    Original     		SA-27E SA-27 07SA14218301* SA14-2183-01 27e transistor IBM "embedded dram" epbga ibm sram PDF

    DS429

    Abstract: xc5vfx70t-ff1136-1 interrupt controller in vhdl code interrupt controller vhdl code interrupt controller vhdl code download interrupt vhdl XC5VFX70T-FF1136 SA-14-2525-00
    Text: DCR Interrupt Controller v2.00a DS429 April 24, 2009 Product Specification Introduction LogiCORE Facts A DCR (Device Control Register Bus v29) Interrupt Controller (INTC) core is composed of a bus-centric wrapper containing the INTC core and a DCR interface.


    Original     		DS429 xc5vfx70t-ff1136-1 interrupt controller in vhdl code interrupt controller vhdl code interrupt controller vhdl code download interrupt vhdl XC5VFX70T-FF1136 SA-14-2525-00 PDF

    250 mhz IBM PowerPC Processor

    Abstract: IBM PCI Express serdes architecture ibm ASIC SRAM SA-12E IBM ASIC Products ibm ip IBM supports ccga 0.25-um standard cell library IBM ASIC
    Text: Standard cell/gate array ASIC for mainstream and cost-sensitive applications SA-12E ASIC Highlights Integration and performance deliver exceptional value. The IBM SA-12E ASIC is a standard  0.25-µm process technology cell and gate array ASIC, featuring a


    Original     		SA-12E SA14-2173-03 250 mhz IBM PowerPC Processor IBM PCI Express serdes architecture ibm ASIC SRAM IBM ASIC Products ibm ip IBM supports ccga 0.25-um standard cell library IBM ASIC PDF

    AM29DL640H

    Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
    Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa AM29DL640H FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640 PDF

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


    Original     		16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400 PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerPC ' TM P relim inary D ata PowerPC 603e RISC Microprocessor 150,160,166,180,200MHz Product Description Highlight s The PowerPC 603e m icro p ro ce sso r is a Pow er M a n a g e m e n t Uni t • Static lo w -po w e r design • D ynam ic pow er m a n ag em en t


    OCR Scan     		200MHz 603eTM 07SA14203200 SA14-2032-00 PDF

    varactor diode V20

    Abstract: SA-278 colpitts oscillator construction LA1193M SA144 AM antenna coil LA1175M LA1193V SSOP20 agc circuit use op amp
    Text: Ordering number : EN4715A Monolithic Linear IC LA1193M, 1193V High-Performance FM Front End for Car Radios Overview The LA1193M and LA1193V are front-end ICs developed for use in car radios. It incorporates an extremely wide dynamic range mixer and a new AGC system consisting


    Original     		EN4715A LA1193M, LA1193M LA1193V 3036B-MFP20 LA1193M] varactor diode V20 SA-278 colpitts oscillator construction SA144 AM antenna coil LA1175M SSOP20 agc circuit use op amp PDF

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


    Original     		Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 PDF

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


    Original     		S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing


    Original     		W78M32V-XBX 8Mx32 120ns 13x22mm PDF

    TSOP-20 FOOTPRINT

    Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S29PL-J 16-Bit) S29PL-J TSOP-20 FOOTPRINT tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL PDF

    10001000XXX

    Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
    Text: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing


    Original     		W78M32V-XBX 8Mx32 120ns 13x22mm 10001000XXX PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166 PDF

    SA158

    Abstract: SA214 8adrr
    Text: 63/+63/+ for Multi-Chip Products MCP  0HJDELW  0 [ %LW &026  9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $À6łt…h€r…h†rÃpˆ……r‡ ² ×6ǒƒvphyƇhqi’À‚qrÃpˆ……r‡


    Original     		S29PL127H SA158 SA214 8adrr PDF

    NS064N

    Abstract: S29NS128N S29NS256N VDC048 S29NS256
    Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70


    Original     		S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed


    Original     		MBM29QM96DF-65/80 MBM29QM96DF 96M-bit, 80-ball F0212 PDF

    10001XXXXX

    Abstract: No abstract text available
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S29PL-J 16-Bit) S29PL-J 10001XXXXX PDF

    Untitled

    Abstract: No abstract text available
    Text: SA14-2031-00 IBM Order Number MPC603E7VEC/D (Motorola Order Number) 7/96 Pam TM Advance Information PowerPC 603e RISC Mi PID7v-603e Hardw The PowerPC 603e microproces reduced instruction set compuj “603e” is used as an abbrevi; PowerPC 603e microproypÜKS


    OCR Scan     		SA14-2031-00 MPC603E7VEC/D 603eTM PID7v-603e PPC603e. MPC603e 0007v PID7v-603e) PID6-603e) 7v-603e PDF

    SSD1353

    Abstract: SSD1353U4 ROW130 Solomon Systech ssd1353 SA 9259 SB148 SB145 SSD1353U4R1 SB143 SC141
    Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1353 Advance Information 160RGB x 132 Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change


    Original     		SSD1353 160RGB SSD1353 SSD1353U4 ROW130 Solomon Systech ssd1353 SA 9259 SB148 SB145 SSD1353U4R1 SB143 SC141 PDF

    IS29GL256

    Abstract: No abstract text available
    Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns


    Original     		IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte IS29GL256 IS29GL256-JTLE PDF

    MX29GL256FLT2I-90Q

    Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
    Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


    Original     		MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544 PDF

    Untitled

    Abstract: No abstract text available
    Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V


    Original     		S71WSxxxJ 16-bit) 66MHz S71WS S71WS256/128/064J PDF

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11 PDF