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SA176 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
SA-1765-BT	BUD Industries	Rack Components, Boxes, Enclosures, Racks, RACK EQUIPMENT SHELF-OPEN NONVEN	Original	PDF
SA-1765-MG	BUD Industries	Rack Components, Boxes, Enclosures, Racks, SHELF OPEN RACK NON VENT 19"	Original	PDF
SA-1766-BT	BUD Industries	Rack Components, Boxes, Enclosures, Racks, SHELF OPEN RACK VENTILATED 19"	Original	PDF
SA-1766-MG	BUD Industries	Rack Components, Boxes, Enclosures, Racks, SHELF OPEN RACK VENTILATED 19"	Original	PDF

SA176 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SA6954 Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00 Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to	Original	PDF	S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00
Untitled Abstract: No abstract text available Text: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)	Original	PDF	S29NS-R S29NS01GR, S29NS512R, S29NS256R, S29NS128R S29NS512P S29NS512R. S29VS256R S29VS128R
SA-275 Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document	Original	PDF	Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G
AM29DL640H Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640 Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	PDF	Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa AM29DL640H FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
A039h Abstract: 3A400 Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.	Original	PDF	16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400
SA452 Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this	Original	PDF	Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
S29WS256N Abstract: S71WS512NE0BFWZZ Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip	Original	PDF	S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N
Untitled Abstract: No abstract text available Text: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing	Original	PDF	W78M32V-XBX 8Mx32 120ns 13x22mm
TSOP-20 FOOTPRINT Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion	Original	PDF	S29PL-J 16-Bit) S29PL-J TSOP-20 FOOTPRINT tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL
10001000XXX Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166 Text: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing	Original	PDF	W78M32V-XBX 8Mx32 120ns 13x22mm 10001000XXX PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
SA158 Abstract: SA214 8adrr Text: 63/+63/+ for Multi-Chip Products MCP 0HJDELW 0 [ %LW &026 9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $Ã6ÃthrhrÃpr ² Ã6ÃvphyÃhqiÃqrÃpr	Original	PDF	S29PL127H SA158 SA214 8adrr
NS064N Abstract: S29NS128N S29NS256N VDC048 S29NS256 Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Single 1.8 volt read, program and erase (1.70	Original	PDF	S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed	Original	PDF	MBM29QM96DF-65/80 MBM29QM96DF 96M-bit, 80-ball F0212
10001XXXXX Abstract: No abstract text available Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion	Original	PDF	S29PL-J 16-Bit) S29PL-J 10001XXXXX

MX29GL256FLT2I-90Q Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544 Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC	Original	PDF	MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
Untitled Abstract: No abstract text available Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V	Original	PDF	S71WSxxxJ 16-bit) 66MHz S71WS S71WS256/128/064J
Spansion S29GL512N11 Abstract: No abstract text available Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages	Original	PDF	S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11
S25FL129 Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024 Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,	Original	PDF	S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
SGA23 Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.	Original	PDF	16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball SGA23
asme SA388 Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ	Original	PDF	S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
FAA064 Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N Text: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion	Original	PDF	S29GL-N S29GL256N, S29GL128N S29GL-N FAA064 SPANSION S29GL128 S29GL128 S29GL-P GL128N GL256N S29GL128N S29GL256N
HPPB Abstract: DS05 FPT-56P-M01 MBM29QM12DH MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97 Text: MBM29QM12DH -60 データシート生産終息品 MBM29QM12DH -60 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及び履歴目的でのみご利用願います。	Original	PDF	MBM29QM12DH MBM29QM12DH DS05-20909-2 DS05-20909-2 HPPB DS05 FPT-56P-M01 MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97
S29WS128J-MCP Abstract: S29WS128J S29WS-J S29WS064J Text: S29WS-J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet S29WS-J Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,	Original	PDF	S29WS-J 16-Bit) S29WS-J S29WS128J-MCP S29WS128J S29WS064J
S29WS128R Abstract: sa512 S29WS512R wireless design guide 13th S29WS WS512R Text: S29WS-R MirrorBit Flash Family S29WS512R, S29WS256R, S29WS128R 512/256/128 Mb 32/16/8M x 16 bit Simultaneous Read/Write, Burst Mode 1.8 Volt-only Flash Memory in 65 nm MirrorBit Technology S29WS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Advance Information)	Original	PDF	S29WS-R S29WS512R, S29WS256R, S29WS128R 32/16/8M S29WS128R sa512 S29WS512R wireless design guide 13th S29WS WS512R

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PEI Genesis CA3101F18-12SA176

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SA176 Datasheets (4)

SA176 Datasheets Context Search

SA6954

Untitled

SA-275

AM29DL640H

A039h

SA452

S29WS256N

Untitled

TSOP-20 FOOTPRINT

10001000XXX

SA158

NS064N

Untitled

10001XXXXX

MX29GL256FLT2I-90Q

Untitled

Spansion S29GL512N11

S25FL129

SGA23

asme SA388

FAA064

HPPB

S29WS128J-MCP

S29WS128R