AM29F040B date code marking information
Abstract: AM29F040B PART MARKING marking CODE SA2 marking AM29F040B SA29 170000H Am29LV200BB sa29 pinout 00000H Am29LV002T
Text: ExpressFlashTM Code Approval Form Section 1: CODE TRANSMITTAL AND ORDERING INFORMATION SECTION Date _ CUSTOMER INFORMATION 1. Company Name _ 2. Customer Contact Name _ 3. Contact’s Phone No. _ 4. AMD Salesperson _
|
Original
|
|
PDF
|
AM29DL164CB
Abstract: F0000H-F7FFFH F8000H-FFFFFH sa37 D8000H-DFFFFH B8000H-BFFFFH 10001XXX 00000H-07FFFH 030000H-03FFFFH 11000XXX
Text: SUPPLEMENT ADVANCE INFORMATION Am29DL164C Data Sheet Supplement This supplement is for use with the Am29DL162/ Am29DL163C data sheet, publication number 21533. This document contains information on ordering part numbers, device bank division, and sector configuration. For all other specifications, refer to the data sheet.
|
Original
|
Am29DL164C
Am29DL162/
Am29DL163C
x8/x16
Kbyte/32
Am29DL164CB
F0000H-F7FFFH
F8000H-FFFFFH
sa37
D8000H-DFFFFH
B8000H-BFFFFH
10001XXX
00000H-07FFFH
030000H-03FFFFH
11000XXX
|
PDF
|
FPT-48P-M19
Abstract: FPT-48P-M20 SA10 SA11 SA12 222eh 222DH 222BH BD703 mbm29dl16xtd
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD-70/-90/-12/MBM29DL16XBD-70/-90/-12 • FEATURES • 0.33um Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
|
Original
|
L16XTD-70/-90/-12/MBM29DL16XBD-70/-90/-12
48-pin
FPT-48P-M19
FPT-48P-M20
SA10
SA11
SA12
222eh
222DH
222BH
BD703
mbm29dl16xtd
|
PDF
|
diagram qualcomm
Abstract: QUALCOMM Reference design qualcomm temperature QUALCOMM BGA block diagram of qualcomm PM Qualcomm FPT-48P-M19 FPT-48P-M20 SA10 qualcomm aT commands
Text: FUJITSU SEMICONDUCTOR DATA SHEET Qualcomm only 2.0E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DD16XTD-90/MBM29DD16XBD-90 • FEATURES • 0.33um Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
|
Original
|
MBM29DD16XTD-90/MBM29DD16XBD-90
48-pin
diagram qualcomm
QUALCOMM Reference design
qualcomm temperature
QUALCOMM BGA
block diagram of qualcomm
PM Qualcomm
FPT-48P-M19
FPT-48P-M20
SA10
qualcomm aT commands
|
PDF
|
sa29 pinout
Abstract: FPT-48P-M19 FPT-48P-M20 SA10
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DD16XTD-10/MBM29DD16XBD-10 • FEATURES • 0.33um Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
|
Original
|
MBM29DD16XTD-10/MBM29DD16XBD-10
48-pin
sa29 pinout
FPT-48P-M19
FPT-48P-M20
SA10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
|
Original
|
DS05-20874-4E
MBM29DL16XTD/BD
F9909
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
|
Original
|
DS05-20880-1E
MBM29DL16XTE/BE
MBM29DL16XTE/BE
|
PDF
|
BGA-48P-M13
Abstract: DS05-20874-4E FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
|
Original
|
DS05-20874-4E
MBM29DL16XTD/BD
MBM29DL16XTD/MBM29DL16XBD
BGA-48P-M13
DS05-20874-4E
FPT-48P-M19
FPT-48P-M20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
|
Original
|
DS05-20880-1E
MBM29DL16XTE/BE
F0005
|
PDF
|
DS05-20874-4E
Abstract: BGA-48P-M13 FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
|
Original
|
DS05-20874-4E
MBM29DL16XTD/BD
MBM29DL16XTD/MBM29DL16XBD
DS05-20874-4E
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
|
PDF
|
1820-1940
Abstract: BGA-48P-M13 DS05-20874-7E FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”
|
Original
|
DS05-20874-7E
MBM29DL16XTD/BD
MBM29DL16XTD/MBM29DL16XBD
F0303
1820-1940
BGA-48P-M13
DS05-20874-7E
FPT-48P-M19
FPT-48P-M20
|
PDF
|
BGA-48P-M13
Abstract: DS05-20874-4E FPT-48P-M19 FPT-48P-M20
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
|
Original
|
DS05-20874-4E
MBM29DL16XTD/BD
MBM29DL16XTD/MBM29DL16XBD
BGA-48P-M13
DS05-20874-4E
FPT-48P-M19
FPT-48P-M20
|
PDF
|
DS05-20874-5E
Abstract: BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 F0211
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”
|
Original
|
DS05-20874-5E
MBM29DL16XTD/BD
MBM29DL16XTD/MBM29DL16XBD
F0211
DS05-20874-5E
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
F0211
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”
|
Original
|
DS05-20874-6E
MBM29DL16XTD/BD
F0302
|
PDF
|
|
|
DS05-20880-1E
Abstract: FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
|
Original
|
DS05-20880-1E
MBM29DL16XTE/BE
MBM29DL16XTE/BE
DS05-20880-1E
FPT-48P-M19
FPT-48P-M20
|
PDF
|
1820-1940
Abstract: DS05-20874-7E mbm29dl16xtd
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
F0303
1820-1940
DS05-20874-7E
mbm29dl16xtd
|
PDF
|
SA30* diode
Abstract: FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes
|
Original
|
DS05-20880-4E
MBM29DL16XTE/BE70/90
MBM29DL16XTE/BE
MBM29DL16XTE/BE70
MBM29DL16XTE/BE90
F0311
SA30* diode
FPT-48P-M19
FPT-48P-M20
|
PDF
|
DIODE marking A19
Abstract: FPT-48P-M19 FPT-48P-M20
Text: MBM29DL16XTE/BE70/90 Data Sheet Retired Product MBM29DL16XTE/BE 70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications
|
Original
|
MBM29DL16XTE/BE70/90
MBM29DL16XTE/BE
DS05-20880-5E
F0311
ProductDS05-20880-5E
DIODE marking A19
FPT-48P-M19
FPT-48P-M20
|
PDF
|
DS05-20880-3E
Abstract: FPT-48P-M19 FPT-48P-M20 SA30* diode
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes
|
Original
|
DS05-20880-3E
MBM29DL16XTE/BE70/90
MBM29DL16XTE/BE
MBM29DL16XTE/BE70
MBM29DL16XTE/BE90
F0305
DS05-20880-3E
FPT-48P-M19
FPT-48P-M20
SA30* diode
|
PDF
|
6b90
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 1 6 M 2 M X 8 BIT M M L .V Ö 16 B - 9 0 - 1 2 FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs • Compatible with JED EC-standard world-wide pinouts
|
OCR Scan
|
40-pin
F9802
6b90
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 16 M 2 M x 8 BIT MBM29F016 -12-x • FEATURES • • • • • • • • • • • • • • • • Single 5.0 V read, program, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash
|
OCR Scan
|
MBM29F016
-12-x
48-pin
Embedd20Â
MBM29F016-12-X
48-LE
|
PDF
|
222DH
Abstract: SKB 7 02 BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 mbm29dl16xtd
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY M l l l 16M 2M X 8/1M X 16 BIT
|
OCR Scan
|
MBM29DL16XTD/BD
MBM29DL16XTDMBM29DL16XBD
F48030S-2C-2
MBM29DL16XTD/BD-70/90/12
48-pin
BGA-48P-M13)
000000o
48-0O
B480013S-1C-1
222DH
SKB 7 02
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
mbm29dl16xtd
|
PDF
|
sa29 pinout
Abstract: 29LV160T TOP SIDE MARKING m03 29LV160
Text: FLASH MEMORY CM OS 8 / 1 X* 1 2 -m M X 1 6 B M 29 B I T ‘9 0 -X /-1 2 -X • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs
|
OCR Scan
|
48-pin
46-pin
48-ball
D-63303
F97010
sa29 pinout
29LV160T
TOP SIDE MARKING m03
29LV160
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-3E FLASH MEMORY CMOS 16M 2M X 8 BIT MBM29F017A-70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash
|
OCR Scan
|
DS05-20843-3E
MBM29F017A-70/-90/-12
48-pin
40-pin
F48029S-2C-2
FPT-48P-M20)
F48030S-2C-2
|
PDF
|
