samsung capacitance Manufacturing location
Abstract: No abstract text available
Text: PC100/PC133 µSODIMM M463S3254CK1 32Mx64 SDRAM µSODIMM Revision 0.2 Sept. 2001 Rev. 0.2 Sept. 2001 M463S3254CK1 PC100/PC133 µSODIMM Revision History Revision 0.0 July 2001 • First published. Revision 0.1 (Aug. 2001) • SPD correction Revision 0.2 (Sept. 2001)
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PC100/PC133
M463S3254CK1
32Mx64
100MHz
M463Sm
samsung capacitance Manufacturing location
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M463S1654CT1-L7A
Abstract: K4S561632C M463S1654CT1 COMMAND K4S561632C-TC k4s561632 date code samsung capacitors samsung capacitance year code
Text: PC100/PC133 µSODIMM M463S1654CT1 16Mx64 SDRAM µSODIMM Revision 0.1 Sept. 2001 Rev. 0.1 Sept. 2001 M463S1654CT1 PC100/PC133 µSODIMM Revision History Revision 0.0 Aug. 2001, Preliminary • First published. Revision 0.1 (Sept. 2001) • Reduced IDD1/4 in DC Characteristics.
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PC100/PC133
M463S1654CT1
16Mx64
100MHz
M463S1654CT1
M463S1654CT1-L7A
K4S561632C
COMMAND
K4S561632C-TC
k4s561632
date code samsung capacitors
samsung capacitance year code
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KMM466S104CT-F0
Abstract: KM416S1020CT-F10
Text: KMM466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Some Parameters values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1uA.
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KMM466S104CT
144pin
200mV.
2K/32ms
4K/64ms.
KMM466S104CT
1Mx64
1Mx16,
KMM466S104CT-F0
KM416S1020CT-F10
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CDC2509
Abstract: samsung capacitance year code
Text: M377S0823ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Revision 0.2 (Sep., 2001) • Changed the Notes in Operating AC Parameter.
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M377S0823ET3
PC100
ALVC162835
ALVCF162835
CDC2509
CDCF2509.
100MHz
samsung capacitance year code
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KMM466S924T-F0
Abstract: No abstract text available
Text: Preliminary 144pin SDRAM SODIMM KMM466S924T KMM466S924T SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S924T is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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144pin
KMM466S924T
KMM466S924T
8Mx64
8Mx16,
400mil
144-pin
KMM466S924T-F0
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KM48S16030T-F10
Abstract: KMM466S1723T-F0
Text: KMM466S1723T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - Self refresh current (ICC6 ) is changed. REV. 2 April '98 Preliminary 144pin SDRAM SODIMM KMM466S1723T2 KMM466S1723T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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KMM466S1723T2
144pin
KMM466S1723T
16Mx64
16Mx8,
400mil
KM48S16030T-F10
KMM466S1723T-F0
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CDC2509
Abstract: samsung capacitance Manufacturing location ALVC162835 CDCF2509 M377S1620ET3 samsung capacitance year code
Text: M377S1620ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Revision 0.2 (Sep., 2001) • Changed the Notes in Operating AC Parameter.
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M377S1620ET3
PC100
ALVC162835
ALVCF162835
CDC2509
CDCF2509.
100MHz
samsung capacitance Manufacturing location
CDCF2509
M377S1620ET3
samsung capacitance year code
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KM48S8030BT-G10
Abstract: KM48S8030BT KM48S8030BT-G
Text: KMM374S823BTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM374S823BTL
200mV.
66MHz
KM48S8030BT-G10
KM48S8030BT
KM48S8030BT-G
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KM48S2020CT-G10
Abstract: KMM374S403CTL-G0
Text: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM374S403CTL
200mV.
KMM374S403CTL
4Mx72
66MHz
KM48S2020CT-G10
KMM374S403CTL-G0
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KM48S2020CT-F10
Abstract: KMM466S203CT-F0 KM48S2020
Text: KMM466S203CT 144pin SDRAM SODIMM Revision History Revision . 2 Mar. 1998 •Some Parameter values & Charcteristeristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM466S203CT
144pin
200mV.
KMM466S203CT
2Mx64
66MHz
KM48S2020CT-F10
KMM466S203CT-F0
KM48S2020
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KMM366S204CTL-G0
Abstract: No abstract text available
Text: KMM366S204CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) :±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM366S204CTL
200mV.
2K/32ms
4K/64ms.
KMM366S204CTL
2Mx64
1Mx16,
66MHz
KMM366S204CTL-G0
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KM416S4030BT-F10
Abstract: KMM466S824BT2
Text: KMM466S824BT2 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp. level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.
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KMM466S824BT2
144pin
66MHz
KM416S4030BT-F10
KMM466S824BT2
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KM416S4020
Abstract: KM416S4020BT-G10
Text: KMM366S804BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM366S804BTL
200mV.
66MHz
KM416S4020
KM416S4020BT-G10
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KM48S8020
Abstract: KMM366S1603BTL-G0
Text: KMM366S1603BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM366S1603BTL
200mV.
66MHz
KM48S8020
KMM366S1603BTL-G0
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KM48S2020CT-G10
Abstract: KMM366S403CTL KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G
Text: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM366S403CTL
200mV.
KMM366S403CTL
4Mx64
66MHz
KM48S2020CT-G10
KMM366S403CTL-G0
KM48S2020
KM48S2020CT-G
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PC133 133Mhz cl3
Abstract: intel date code format
Text: PC100/PC133 µSODIMM M463S3254DK1 M463S3254DK1 SDRAM µ SODIMM 32Mx64 SDRAM µSODIMM based on 32Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M463S3254DK1 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PC100/PC133
M463S3254DK1
M463S3254DK1
32Mx64
32Mx16,
400mil
144-pin
PC133 133Mhz cl3
intel date code format
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KMM466S1724T-F0
Abstract: No abstract text available
Text: KMM466S1724T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - Self refresh current (ICC6 ) is changed. REV. 2 April '98 Preliminary 144pin SDRAM SODIMM KMM466S1724T2 KMM466S1724T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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KMM466S1724T2
144pin
KMM466S1724T
16Mx64
8Mx16,
400mil
KMM466S1724T-F0
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KMM366S104CTL-G0
Abstract: No abstract text available
Text: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) :±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM366S104CTL
200mV.
2K/32ms
4K/64ms.
KMM366S104CTL
1Mx64
1Mx16,
66MHz
KMM366S104CTL-G0
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Untitled
Abstract: No abstract text available
Text: KMM374S803BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.
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KMM374S803BTL
200mV.
66MHz
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M464S1654DTS
Abstract: k4s561632d-tl7
Text: M464S1654DTS PC133/PC100 SODIMM M464S1654DTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1654DTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S1654DTS consists of four CMOS 16M x 16 bit with
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M464S1654DTS
PC133/PC100
M464S1654DTS
16Mx64
16Mx16,
400mil
144-pin
k4s561632d-tl7
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M464S3254DTS
Abstract: k4s561632d-tl7
Text: PC133/PC100 SODIMM M464S3254DTS M464S3254DTS SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3254DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133/PC100
M464S3254DTS
M464S3254DTS
32Mx64
16Mx16,
400mil
144-pin
k4s561632d-tl7
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K4S561632D-T
Abstract: No abstract text available
Text: PC100/PC133 µSODIMM M463S1654DT1 M463S1654DT1 SDRAM µ SODIMM 16Mx64 SDRAM µSODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M463S1654DT1 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M463S1654DT1 consists of four CMOS 16M x 16 bit with
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PC100/PC133
M463S1654DT1
M463S1654DT1
16Mx64
16Mx16,
400mil
144-pin
K4S561632D-T
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Untitled
Abstract: No abstract text available
Text: PC133/PC100 SODIMM M464S3254CTS M464S3254CTS SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3254CTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133/PC100
M464S3254CTS
M464S3254CTS
32Mx64
16Mx16,
400mil
144-pin
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KM48S8030BT-F10
Abstract: KMM466S823BT2-F0 KMM466S823BT2
Text: KMM466S823BT2 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp. level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.
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KMM466S823BT2
144pin
66MHz
KM48S8030BT-F10
KMM466S823BT2-F0
KMM466S823BT2
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