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    SAMSUNG ELECTRONICS. 1GBIT NAND FLASH MEMORY Search Results

    SAMSUNG ELECTRONICS. 1GBIT NAND FLASH MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    SAMSUNG ELECTRONICS. 1GBIT NAND FLASH MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S3C2443

    Abstract: S3C2443X s3c2440A ARM920T s3c2443 datasheet Samsung Electronics. 1Gbit NAND flash memory ahb complaint i2c MSDR s3c2443 sd card gpio interface for s3c2440a CMOS Camera Module interface with arm 11
    Text: Product Technical Brief S3C2443 Rev 2.1, June 2006 Overview S3C2443X is a derivative product of Samsung’s S3C24XXX family of microprocessors for mobile communication market. The S3C2443X’s main enhancement over the baseline product, S3C2440A, is the integration of USB Device 2.0 and CFII+


    Original     		S3C2443 S3C2443X S3C24XXX S3C2440A, ARM920T 16/32-bit 16-bit S3C2443 s3c2440A ARM920T s3c2443 datasheet Samsung Electronics. 1Gbit NAND flash memory ahb complaint i2c MSDR s3c2443 sd card gpio interface for s3c2440a CMOS Camera Module interface with arm 11 PDF

    emmc pin

    Abstract: emmc 5.0 samsung eMMC 5.0 221 ball eMMC memory emmc controller emmc jedec mechanical standard data retention samsung eMMC NUMONYX emmc eMMC slc mode NAND08GAH
    Text: NAND114AQA5M 1-Gbit, demux I/O OneNAND , 1-Gbyte NAND with MMC™ interface & 1-Gbit x32 DDR LPSDRAM MCP Preliminary Data Features • MCP (multichip package) – 1-Gbit (x16) high-density SLC large page OneNAND™ flash memory(a) – 1-Gbit (x32) DDR LPSDRAM


    Original     		NAND114AQA5M LFBGA199 emmc pin emmc 5.0 samsung eMMC 5.0 221 ball eMMC memory emmc controller emmc jedec mechanical standard data retention samsung eMMC NUMONYX emmc eMMC slc mode NAND08GAH PDF

    emmc pin

    Abstract: 221 ball eMMC memory numonyx oneNand flash samsung emmc boot eMMC slc mode emmc 5.0 samsung eMMC 5.0 emmc boot operation emmc jedec Flash Memory SAMSUNG OneNAND mcp
    Text: NAND114APA5M 1-Gbit, mux I/O OneNAND , 1-Gbyte NAND with MMC™ interface & 1-Gbit x32 DDR LPSDRAM MCP Preliminary Data Features • ■ ■ MCP (multichip package) – 1-Gbit (x16) high-density SLC large page OneNAND™ flash memory(a) – 1-Gbit (x32) DDR LPSDRAM


    Original     		NAND114APA5M LFBGA199 emmc pin 221 ball eMMC memory numonyx oneNand flash samsung emmc boot eMMC slc mode emmc 5.0 samsung eMMC 5.0 emmc boot operation emmc jedec Flash Memory SAMSUNG OneNAND mcp PDF

    samsung s3c2416

    Abstract: s3c2416 movinand LCD 320X240 S3C2412 Inand Samsung S ARM s3c2416 Multimedia Card Specification 2.11 SAMSUNG moviNAND Samsung s3c2412
    Text: Product Technical Brief S3C2416 May 2008 Overview SAMSUNG's S3C2416 is a 32/16-bit RISC cost-effective, low power, high performance micro-processor solution for general applications including the GPS Navigation and Mobile Phone markets. Additionally, in order to


    Original     		S3C2416 S3C2416 32/16-bit S3C2412. ARM926EJ 512Byte 50Mbps) 64Byte samsung s3c2416 movinand LCD 320X240 S3C2412 Inand Samsung S ARM s3c2416 Multimedia Card Specification 2.11 SAMSUNG moviNAND Samsung s3c2412 PDF

    s3c2450

    Abstract: SD card V2.0 Physical Layer Spec ARM926EJ s3c2450 HS_SPI s3c245 S3C2443 efuse ROM movinand MOVinand spec movinand datasheet
    Text: aarryy in n i m i l m i e l r PPre Overview SAMSUNG's S3C2450 is a 32/16-bit RISC cost-effective, low power, high performance micro-processor solution for general applications including the GPS Navigation and Mobile Phone markets. Additionally, in order to


    Original     		S3C2450 32/16-bit S3C2443. ARM926EJ perf48KHz 512Byte 50Mbps) 64Byte SD card V2.0 Physical Layer Spec ARM926EJ s3c2450 HS_SPI s3c245 S3C2443 efuse ROM movinand MOVinand spec movinand datasheet PDF

    K9F4G08 512MB NAND Flash

    Abstract: Samsung k9f1208 K9F1G08 hard disk ATA pcb schematic K9F4G08 SAMSUNG NAND FLASH K9F1G08 K9F1208 k9f2g08 SAMSUNG NAND FLASH K9F5608 samsung nand flash
    Text: S3F49FAX FLASH Controllers for Compact Flash / PC Card / IDE Disk REFERENCE GUIDE MANUAL HELP DESK Sejin, Ahn [email protected] Sanghun, Song ([email protected]) REFERENCE GUIDE MANUAL S3F49FAX Table of Contents 1.1


    Original     		S3F49FAX S3F49FAX K9F4G08 512MB NAND Flash Samsung k9f1208 K9F1G08 hard disk ATA pcb schematic K9F4G08 SAMSUNG NAND FLASH K9F1G08 K9F1208 k9f2g08 SAMSUNG NAND FLASH K9F5608 samsung nand flash PDF

    SAMSUNG NAND FLASH TRANSLATION LAYER

    Abstract: samsung rfs Extended Sector Remapper oneNand oneNand flash onenand block header BML STL NAND XSR onenand xsr samsung xsr
    Text: SEC- RFS1.2.1- PRE RFS v1.2.1 Pre-programming Guide 07-APR -2006 , Version 1.5 Copyright notice Copyright ⓒ Samsung Electronics Co., Ltd All rights reserved. Trademarks RFS is a trademark of Samsung Electronics Co., Ltd in Korea and other countries. Restrictions on Use and Transfer


    Original     		07-APR SAMSUNG NAND FLASH TRANSLATION LAYER samsung rfs Extended Sector Remapper oneNand oneNand flash onenand block header BML STL NAND XSR onenand xsr samsung xsr PDF

    K9F1G08U0C

    Abstract: K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08B0C K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report
    Text: Advance FLASH MEMORY K9F1G08B0C K9F1G08U0C K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F1G08B0C K9F1G08U0C K9F1G08X0C K9F1G08U0C K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report PDF

    SAMSUNG NAND FLASH TRANSLATION LAYER

    Abstract: Extended Sector Remapper samsung xsr NAND XSR LOCKPCHD samsung rfs onenand xsr onenand partition NBL1 pcb17
    Text: SEC-RFS1.2-PRE RFS v1.2.0 Pre-programming Guide FEB-23-2006 , Version 1.4 Copyright notice Copyright ⓒ Samsung Electronics Co., Ltd All rights reserved. Trademarks RFS is a trademark of Samsung Electronics Co., Ltd in Korea and other countries. Restrictions on Use and Transfer


    Original     		FEB-23-2006 SAMSUNG NAND FLASH TRANSLATION LAYER Extended Sector Remapper samsung xsr NAND XSR LOCKPCHD samsung rfs onenand xsr onenand partition NBL1 pcb17 PDF

    K9F1G08U0D-SCB0

    Abstract: K9F1G08U0D K9F1G08U0C K9F1G08U0D-SCB K9F1G08U0D-S SAMSUNG K9F1G08U0D K9F1G08U0D-HCB0 K9F1G08U0D-H K9F1G08X0D-SCB0 K9F1G08X0D
    Text: FLASH MEMORY K9F1G08U0D K9F1G08U0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F1G08U0D K9F1G08U0C 200us 700us K9F1G08U0D 250us 750us K9F1G08U0D-SCB0 K9F1G08U0D-SCB K9F1G08U0D-S SAMSUNG K9F1G08U0D K9F1G08U0D-HCB0 K9F1G08U0D-H K9F1G08X0D-SCB0 K9F1G08X0D PDF

    K9F1G08R0B-JIB0

    Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G08R0B K9F1G08R0B-JIB SAMSUNG 256Mb NAND Flash Qualification Reliability TADL samsung 8GB Nand flash samsung 2Gb nand flash K9F1G08R0B-JCB0
    Text: FLASH MEMORY K9F1G08R0B K9F1G08R0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F1G08R0B 100ns) K9F1G08R0B-JIB0 SAMSUNG 4gb NAND Flash Qualification Report K9F1G08R0B K9F1G08R0B-JIB SAMSUNG 256Mb NAND Flash Qualification Reliability TADL samsung 8GB Nand flash samsung 2Gb nand flash K9F1G08R0B-JCB0 PDF

    date code marking samsung Nand

    Abstract: date code marking toshiba Nand spi hynix nand flash nand flash HYNIX MLC hynix SLC nand 64-LQFN cdi schematic diagram toshiba NAND Flash MLC reset nand flash HYNIX "Flash Memory select"
    Text: W86L167C WINBONDSD CARD CONTROLLER -I- Publication Release Date: April 15, 2005 Revision 1.0 W86L167C Preliminary Table of Contents1. GENERAL DESCRIPTION . 1


    Original     		W86L167C W86L167C W86L167CY 64-pin) W86L167CSY 48-pin) date code marking samsung Nand date code marking toshiba Nand spi hynix nand flash nand flash HYNIX MLC hynix SLC nand 64-LQFN cdi schematic diagram toshiba NAND Flash MLC reset nand flash HYNIX "Flash Memory select" PDF

    spi hynix nand flash

    Abstract: L167C 48-LQFN ACMD42 64-LQFN nand flash HYNIX MLC date code marking toshiba Nand HYNIX PACKING date code marking samsung Nand toshiba NAND Flash MLC
    Text: W86L167C WINBONDSD CARD CONTROLLER -I- Publication Release Date: December 2, 2004 Revision 0.6 W86L167C Preliminary Revision History PAGES DATES VERSION VERSION ON WEB 1 - 5/2004 0.50 N/A First published. 2 19, 20 7/13/2004 0.51 N/A Update reference schematic.


    Original     		W86L167C W86L167C spi hynix nand flash L167C 48-LQFN ACMD42 64-LQFN nand flash HYNIX MLC date code marking toshiba Nand HYNIX PACKING date code marking samsung Nand toshiba NAND Flash MLC PDF

    K9F1G08U0B-PCB0

    Abstract: K9F1G08U0B K9F1G08U0B-P SAMSUNG 4gb NAND Flash Qualification Report K9F1G08U0B-PCB0 datasheet K9F1G08U0b-pcb K9F1G08U0B-XCB0 K9F1G08U0BPCB0 k9f1g08u0b-s k9f1g08u0b-xib0
    Text: FLASH MEMORY K9F1G08U0B K9XXG08UXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F1G08U0B K9XXG08UXB K9F1G08U0B-PCB0 K9F1G08U0B K9F1G08U0B-P SAMSUNG 4gb NAND Flash Qualification Report K9F1G08U0B-PCB0 datasheet K9F1G08U0b-pcb K9F1G08U0B-XCB0 K9F1G08U0BPCB0 k9f1g08u0b-s k9f1g08u0b-xib0 PDF

    MCP 67 MV- A2

    Abstract: K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a
    Text: Target K5D1G13ACD-D075 MCP MEMORY MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K5D1G13ACD-D075 512Mb K5D1G13ACD-D075000 SG2002063-01 MCP 67 MV- A2 K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a PDF

    NAND FLASH DDP

    Abstract: SAMSUNG MCP MCP 256M nand 128M mobile sdram 137FBGA MCP 67 MV- A2 8188 KBE00F005A KBE00F005A-D411 MCP NOR FLASH SDRAM UtRAM Density
    Text: KBE00F005A-D411 MCP MEMORY MCP Specification 512Mb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		KBE00F005A-D411 512Mb 256Mb 137-Ball 80x14 NAND FLASH DDP SAMSUNG MCP MCP 256M nand 128M mobile sdram 137FBGA MCP 67 MV- A2 8188 KBE00F005A KBE00F005A-D411 MCP NOR FLASH SDRAM UtRAM Density PDF

    kbe00f003m

    Abstract: SAMSUNG MCP Flash MCp nand DRAM 107-ball NAND FLASH DDP samsung mcp 107-ball d411 KBE00G003M-D411 NNDD512512256256BBFF UtRAM Density MCP 1Gb 512Mb 130
    Text: KBE00G003M-D411 MCP MEMORY NNDD512512256256BBFF NAND 512Mb*2 + Mobile SDRAM 256Mb*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		KBE00G003M-D411 NNDD512512256256BBFF 512Mb 256Mb 107-Ball 80x13 kbe00f003m SAMSUNG MCP Flash MCp nand DRAM 107-ball NAND FLASH DDP samsung mcp 107-ball d411 KBE00G003M-D411 NNDD512512256256BBFF UtRAM Density MCP 1Gb 512Mb 130 PDF

    qualcomm nand

    Abstract: KBE00500AM-D437 SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: Target MCP MEMORY KBE00500AM-D437 MCP Specification 1Gb NAND Flash Memory * 2 + 512Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		KBE00500AM-D437 512Mb KBE00500AM-D437 SG2002063-01 qualcomm nand SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability PDF

    SAMSUNG MCP

    Abstract: 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp
    Text: Preliminary MCP MEMORY K5D1G58KCM-D090 Document Title Multi-Chip Package MEMORY 1G Bit 128Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date 0.0 Initial issue. - 1Gb NAND A-Die_ Ver 0.3 - 256Mb Mobile SDRAM F-Die_Ver 1.1


    Original     		K5D1G58KCM-D090 128Mx8) 2Mx32x4Banks) 256Mb 119-Ball SAMSUNG MCP 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary


    Original     		K9T1G08U0M PDF

    K9T1G08U0M

    Abstract: K9T1G08U0M-V K9T1G08U0M-Y SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary 0.2


    Original     		K9T1G08U0M K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y SAMSUNG 256Mb NAND Flash Qualification Reliability PDF

    SAMSUNG 256Mb NAND Flash Qualification Reliability

    Abstract: K9T1G08B0M-FCB0
    Text: Preliminary FLASH MEMORY K9T1G08B0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 8th 2004 Advanced 0.1 1.Program/Erase characteristics note1 is added 2.Technical note is changed


    Original     		K9T1G08B0M SAMSUNG 256Mb NAND Flash Qualification Reliability K9T1G08B0M-FCB0 PDF

    K9T1G08U0M-YCB0

    Abstract: K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-VCB0 K9T1G08U0M-Y
    Text: K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 FLASH MEMORY Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)]


    Original     		K9T1G08U0M-YCB0 K9T1G08U0M-VCB0 K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y PDF

    TwB 75

    Abstract: SAMSUNG 256Mb NAND Flash Qualification Reliability K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y Samsung Flash
    Text: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary


    Original     		K9T1G08U0M TwB 75 SAMSUNG 256Mb NAND Flash Qualification Reliability K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y Samsung Flash PDF