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    SAMSUNG NAND DERATING Search Results

    SAMSUNG NAND DERATING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4011BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, 2-Input/NAND, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    TC4093BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, 2-Input/NAND, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    TC74HC00AP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Quad 2-Input/NAND, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G00NX Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), 2-Input/NAND, XSON6, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7SH00FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), 2-Input/NAND, SOT-353 (USV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    SAMSUNG NAND DERATING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K524G2GACB-A050

    Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
    Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    K524G2GACB-A050 A10/AP K524G2GACB-A050 samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr PDF

    KBY00

    Abstract: LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D
    Text: Rev. 1.0, Jul. 2010 KBY00U00VA-B450 MCP Specification 8Gb DDP 512M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    KBY00U00VA-B450 A10/AP KBY00 LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR KS54HCTLS KS74HCTLS INC □2 DE| 7U4145 00Qb3D7 I | on 8-1np ut Nand Gate FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of C M O S • High-Drive-Current outputs:


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    7U4145 00Qb3D7 KS54HCTLS KS74HCTLS 54/74LS 7Tb414S 90-XO 14-Pin PDF

    HCTLS

    Abstract: No abstract text available
    Text: SAMSUNG SE MIC ONDU CT OR INC os de| 7Tb4ma KS54HCTLS H O O KS74HCTLS • DDGtasi 0 63 51 D Quad Schmitt-Trigger NAND Gates Preliminary Specifications FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with These Schmitt-trigger d evices contain four Independent


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    KS54HCTLS KS74HCTLS 54/74LS KS74H 7Tb414S 90-XO 14-Pin HCTLS PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC D5 KS54AHCT KS74AHCT 12 de| ? ^ bm4s o o o s ,i3t, s | t -1 Triple 3-lnpul NAND Gates with Opert-Drain Outputs FEATURES DESCRIPTION • Function, pln-out, speedand drive compatibility with 54I74ALS logic family • Low power consumption characteristic of CMOS


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    KS54AHCT KS74AHCT 71b414S 90-XO 14-Pin PDF

    153-FBGA

    Abstract: 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp
    Text: Rev. 1.0, Oct. 2010 K522H1HACF-B050 MCP Specification 2Gb 128M x16 NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    K522H1HACF-B050 A10/AP 153-FBGA 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp PDF

    1411D

    Abstract: 74142 logic diagram AHCT20
    Text: SAMSUNG SEMICONDUCTOR IN C 02 KS54AHCT 2 ^ KS74AHCT D e | TlbM lM S OGG5 T 41 T J~_ D . - ^ *7 ^ 3 -* f Dual 4-Input NAND Gates FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54f74ALS logic family • Low power consumption characteristic of CMOS


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    KS54AHCT KS74AHCT 54f74ALS KS74AHCT: KS54AHCT: 300-mil 7Tb414S 90-XO 14-Pin 1411D 74142 logic diagram AHCT20 PDF

    KS74 SOP

    Abstract: KS74
    Text: SAMSUNG SEMICONDUCTOR INC 05 KS54HCTLS f i f i KS74HCTLS u u , D E l ? cit . m 4 E O00b274 1 I T T Quad 2-Input NAND Gates FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54S74LS logic family • Low power consumption characteristic of CMOS


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    O00b274 KS54HCTLS KS74HCTLS 54S74LS KS74HCTLS: 300-mil 7Tb414S 90-XO 14-Pin KS74 SOP KS74 PDF

    KS74

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC 02 K S 7 4H C T l1 1 0 DÊJjj 7 citi14 l 4 5 OODba^Q □ Triple 3-Input NAND Gates : — FEATURES DESCRIPTION. • Function, pin-out, speed and drive compatibility with 54174LS logic family • Low power consumption characteristic of CMOS


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    54174LS KS74HCTLS: KS54HCTLS: 300-mil 7Tb414S 90-XO 14-Pin KS74 PDF

    taig

    Abstract: No abstract text available
    Text: SAMSUNG SE MIC O N D U C T OR INC OB 5T| 7^4142 KS54HCTLS O Q KS74HCTLS 00Qb303 4 Dual 4-Input NAND Gates with Open-Drain Outputs -f - 4 3 - I -1 FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74LS logic family


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    00Qb303 KS54HCTLS KS74HCTLS 7Tb414S 90-XO 14-Pin taig PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC OE KS74HCTLS ^ 3 D E I 71fc.4142 D 0 D L 3 S 4 0 J~. 13-Input NAND^Gates FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with S4/74LS logic family • Low power consumption characteristic of CMOS • High-Drive-Current outputs:


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    KS74HCTLS 13-Input S4/74LS KS74HCTLS: KS54HCTLS: 300-mil 7Tb414S 90-XO 14-Pin PDF

    S74AHCT

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC DE DË| ~ KS54AHCT f i f i KS74AHCT u u GOOSTIL Q -7 ^ 3 -2 / Quad 2-lnput NAND Gates FEA TU R E S DESCRIPTION • Function, pin-out, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CM OS


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    KS54AHCT KS74AHCT 54/74ALS 7Tb414S 90-XO 14-Pin S74AHCT PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICO NDUCT OR INC 02 KS54AHCT o n KS74AHCT_ DE| 7 ^ 1 4 2 0005^4=] 3 J } f 4 v lì 8-Input Nand Gate FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CMOS


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    KS54AHCT KS74AHCT_ 54/74ALS KS74AHCT: KS54AHCT: 300-mil 7Tb414S 90-XO 14-Pin PDF

    MCP 256M nand samsung mobile DDR

    Abstract: MCP MEMORY samsung nor nand ddr mcp MCP NAND DDR KA100O015E SAMSUNG MCP KA100O015E-BJTT 137FBGA nand mcp samsung ka nand sdram mcp
    Text: Rev. 1.0, Jul. 2010 KA100O015E-BJTT MCP Specification 4Gb 256M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    KA100O015E-BJTT A10/AP MCP 256M nand samsung mobile DDR MCP MEMORY samsung nor nand ddr mcp MCP NAND DDR KA100O015E SAMSUNG MCP KA100O015E-BJTT 137FBGA nand mcp samsung ka nand sdram mcp PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SE MI CO ND UCTOR INC OS DEI 7^4142 KS54AHCT O O KS74AHCT “ □□□ST4S t. | -pH*-*! Dual 4-lriput NAND Gates with Open-Drain Outputs FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CMOS


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    KS54AHCT KS74AHCT 54/74ALS 7Tb414S 90-XO 14-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC 0 2 D E J p P T t m M E KS74AHCT * 3 3 Q GO ST Tf TT 13-Input NAND Gates FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic ol CMOS • High-Drive-Current outputs:


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    KS74AHCT 13-Input 54/74ALS 7Tb414S 90-XO 14-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S E M I C ONDU CT OR INC OB D E * 7=1^4145 OOQbETM 7 Triple 3-Input NAND Gates with Open-Drain Outputs •-<43-SL\ KS54HCTLS H O KS74HCTLS FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of CMOS


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    KS54HCTLS KS74HCTLS 54/74LS KS74HCTLS: KS54HCTLS: 300-mil 43-SL\ 7Tb414S 90-XO 14-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S E M I CON DU CT OR INC OE KS54HCTLS f ì i KS74HCTLS v 1 F e | T U M l M a 000 bE7L s | ~T-*f3-aj • Quad 2-Input NAND Gates with Open-Drain Outputs FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with S4/74LS logic family


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    KS54HCTLS KS74HCTLS 7Tb414S 90-XO 14-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S E M I CO ND UCTOR INC 03 DE | 7 ^ 4 1 4 2 D00L5fl0 7 | Quad 2-Input NAND Gates with Open-Drain Outputs KS54HCTLS M KS74HCTLS w T " H 3 -V I FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of CMOS


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    D00L5fl0 KS54HCTLS KS74HCTLS 54/74LS KS74HCTLS: KS54HCTLS: 300-mil 7Tb414S 90-XO 14-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DE,I 7 % H 1 4 E S A M S U N G S E M I C O N D U C T O R INC 02 □ □ O S cn B L> | 3 D • ' ;^ • • r '7^S7- 2 / Quad Schmitt-Trigger NAND Gates KS54ÀHCT Ï O Ö KS74AHCT Preliminary Specifications FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with


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    KS74AHCT 54/74ALS KS74AHCT: KS54AHCT: 7Tb414S 90-XO 14-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: SA MSUNG SE MI C O N D U C T OR INC OE KS54AHCT -f/J KS74AHCT l u d I | 7 ^ 4 1 4 5 0005^32 ñ | Triplé 3-Input NAND Gates FEATURES DESCRIPTION • Function, pin-out, speed end drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CMOS


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    KS54AHCT KS74AHCT 54/74ALS KS74AHCT: 300-mil 7Tb414S 90-XO 14-Pin PDF

    samsung "nand flash" derating

    Abstract: XTAL1 4m MG30
    Text: Information Manual March 1998 Lucent Technologies MG30 NAND FlashTAD — CID/AECS 4 Electrical Characteristics and Requirements 4.1 Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso­


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    max2919

    Abstract: No abstract text available
    Text: S A M S UNG S E M I C O N D U CTOR INC 05 KS54AHCT Q -f KS74AHCT D E ^ T ^ m M a OODSTlñ 3 J T-43-21 Quad 2-Input NAND Gates with Open-Drain Outputs FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54J74ALS logic family • Low power consumption characteristic of CM O S


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    T-43-21 KS54AHCT KS74AHCT 54J74ALS 7Tb414S 90-XO 14-Pin max2919 PDF

    AHCT03

    Abstract: No abstract text available
    Text: S A M S U N G S E M I C O N D U C T O R INC OE DE| 7^4142 □ □ □ S c125 S | T-V3-ZÎ KS54AHCT M KS74AHCT w " FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with These devices contain four independent 2-input NAND gates with open-drain outputs. Using a suitable pull-up


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    KS54AHCT KS74AHCT 54/74ALS KS74AHCT: S54AHCT: 300-mil 7Tb414S 90-XO 14-Pin AHCT03 PDF