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    SAMSUNG TANTALUM CAPACITOR TCP Search Results

    SAMSUNG TANTALUM CAPACITOR TCP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    SAMSUNG TANTALUM CAPACITOR TCP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42 E D O f 7Sb41_42 £ 0 1 0 1 4 1 KM44C288B 2 MStlGK CMOS DRAM Lfio'ZS-tS 256K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268B is a high speed CMOS


    OCR Scan     		KM44C288B KM44C268B 130ns KM44C268B- KM44C268B* 150ns KM44C268B-10 100ns 180ns KM44C26 PDF

    Untitled

    Abstract: No abstract text available
    Text: b?E » S A M S UN G E L E C T R O N I C S INC • 7^4142 0 0 1 5 5 1 1 T3fi CMOS DRAM KM44C266C 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: tnAC I cac tnc KM44C266C-6 60ns 15ns


    OCR Scan     		KM44C266C KM44C266C-6 110ns KM44C266C-7 130ns KM44C266C-8 150ns 20-LEAD 001SS25 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELE CT RONICS INC MSE D Hi 7*T_h43i42 0010110 2 B SMGK KM44C266B CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode : Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Perform ance range; tR A C • • • • • • • • • •


    OCR Scan     		h43i42 KM44C266B 130ns 150ns 44C266B- 180ns 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM44C268C 0G15S45 SO I « S P I C K CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS


    OCR Scan     		KM44C268C 0G15S45 KM44C268C KM44C268C-6 110ns KM44C268C-7 130ns KM44C268C-8 150ns KM44ress PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns GD1S412 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E ]> B 7Tb*4142 001003b S Ë3SÎ1GK KM41C1000BL CMOS DRAM 1MX1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000BL is a C M O S high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­


    OCR Scan     		001003b KM41C1000BL KM41C1000BL KM41C1000BL- 110ns KM41C1Ã 130ns 150ns KM41C1000BL-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E ]> 7 = ^ 4 1 4 2 0 0 1 5 4 1 4 7bb H S f l G K CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		KM41C1000CSL KM41C1000CSL 576x1 KM41C1000CSL-6 110ns 130ns KM41C1000CSL-8 KM41C1000CSL-7 150ns 20-LEAD PDF

    km41c1001

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC S3E D • 7Tbm42 KM41C1001A CMOS DRAM T '4 -6 '5 1 3 - 1 M x 1 Bit Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: tcAc tnc 70ns 20ns 130ns KM41C1001A- 8 80ns 20ns 150ns KM41C1001A-10 100ns 25ns 180ns


    OCR Scan     		7Tbm42 KM41C1001A KM41C1001A 18-LEAD 7Tb414E 20-LEAD 20-PIN km41c1001 PDF

    TCA 290

    Abstract: No abstract text available
    Text: '* KM44C268C CMOS DRAM 2 5 6 K X 4 Bit C M O S Dynamic R A M with Static Column M ode Write P er Bit M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM44C268C KM44C268C-6 KM44C268C-7 KM44C268C-8 110ns 130ns 150ns KM44C268C KM44C26SC 20-LEAD TCA 290 PDF

    KM41C1000B-8

    Abstract: KM41C1000B
    Text: SAMSUNG ELECTRONICS INC 4SE D • 7 ^ 4 1 4 2 0G10022 5 KM41C1000B CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: two • • • • • • • • • tcAQ The Samsung KM41C1000B is a CMOS high speed


    OCR Scan     		0G10022 KM41C1000B KM41C1000B-6 110ns KM41C1000B-7 130ns KM41C1000B-8 KM41C1000B-10 KM41C1000B 576x1 KM41C1000B-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEE D SAMSUNG ELEC TRONICS INC n 7%4142 DGlOObS 1 BHSMiSK KM41C1002B CMOS DRAM 1M X 1 Bit C M O S Dynamic R A M with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002B is a CMOS high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­


    OCR Scan     		KM41C1002B KM41C1002B KM41C1002B- 110ns 130ns 150ns KM41C1002B-10 KM41C1002B" 100ns PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC MSE ]> 7 ^ 4 1 4 2 0Q10125 • "' KM44C258B 4 MSMGK CMOS DRAM - ‘1 ' T % ¿/ 0 ' 2 S .1 5 2 5 6 K X 4 Bit C M O S Dynamic R AM with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258B is a CMOS high speed


    OCR Scan     		0Q10125 KM44C258B KM44C258B KM44C258B- 130ns 150ns KM44C258B-10 100ns 180ns PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E » • 7 ^ b m 4 2 DOlblSl flôfi KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its


    OCR Scan     		KM44C4000 130ns 150ns 44C4000-7 44C4000-8 24-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS b7E D INC • 7 T b 4 1 4 5 D D l b 2D 5 07T KM44C4100L CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4100L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de­


    OCR Scan     		KM44C4100L KM44C4100L 110ns KM44C4100L-7 130ns KM44C4100L-8 150ns KM44C4100L-6 47/iF PDF

    KM41C1001BP

    Abstract: No abstract text available
    Text: i+2E D S A M S U N G E L E C T R O N I C S INC • 7^4142 KM41C10Ö1B GGIOOSO T ■ SflGK CMOS DRAM 1 M X 1 B it C M O S D y n a m ic R A M w ith N ib b le M o d e ‘I _ ' T ' tt b - Z 5 .- r 5 FEA TU RES GEN ERAL DESCRIPTION • Performance range: The Samsung KM41C1001B is a CMOS high speed


    OCR Scan     		KM41C10Ã KM41C1001B KM41C1001B- 110ns 130ns 150ns KM41C1001B-10 KM41C1001B KM41C1001BP PDF

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E ]> • 7^4142 KM44C1000BL GDlSbbfl ?T*i I SMGK CMOS DRAM 1M x 4 Bit C M O S Dynamic RAM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000BL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its


    OCR Scan     		KM44C1000BL KM44C1000BL KM44C100QBL-6 110ns KM44C1000BL-7 130ns KM44C1OOOBL-8 150ns 20-LEAD 7Tb4142 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • T'ibmMS ÜÜ1S7E5 ST4 ■ KM44C1002B CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory, Its de­


    OCR Scan     		KM44C1002B KM44C1002B 576x4 KM44C1002B-6 110ns KM44C1002B-, 130ns KM44C1002B-8 150ns 20-LEAD PDF

    DRAM 18DIP

    Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
    Text: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 KM41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its


    OCR Scan     		KM41C1000CSL KM41C1000CSL-6 110ns KM41C1000CSL-7 130ns KM41C1000CSL-8 150ns 100fiA 100/A cycle/128ms DRAM 18DIP DRAM 256kx4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ ^ 4 1 4 2 00154*1 *4 T 2 R KM44C256CSL CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION » Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its


    OCR Scan     		KM44C256CSL 256Kx4 KM44C256CSL KM44C256CSL-6 110ns 130ns KM44C256CSL-8 KM44C256CSL-7 150ns 20-LEAD PDF

    41C1000A

    Abstract: KM41C1000 KM41C1000A-10 KM41C1000AZ 41C1000 km41c1000a KM41C1000AJ
    Text: SAMSUNG SEMICONDUCTOR INC S3E D • 7^4142 0005117 b KM41C1Q00A CMOS DRAM 1 M x 1 Bit Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC KM41C1000A- 7 • • • • • • • • • tcAC The Samsung KM41C1000A is a CMOS high speed


    OCR Scan     		KM41C1Q KM41C1000A- KM41C1000A-10 130ns 150ns 180ns KM41C1000A 576x1 41C1000A KM41C1000 KM41C1000A-10 KM41C1000AZ 41C1000 KM41C1000AJ PDF

    KM44C256AP

    Abstract: samsung hv capacitor KM44C256A-8 KM44C256A KM44C256A-10 KM44C256A-12 KM44C2 262144x4
    Text: SAMSUNG SEMICONDUCTOR INC E3E D 7=1^145 OOOñlbO 7 • KM44C256A CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC • • • • • • • • • tcAC •rc 150ns KM44C256A- 8 80ns 20ns


    OCR Scan     		KM44C256A 256Kx4 KM44C256A- 150ns KM44C256A-10 100ns 180ns KM44C256A-12 120ns 220ns KM44C256AP samsung hv capacitor KM44C256A-8 KM44C256A KM44C2 262144x4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 Q01S74S QÛ2 I KM44C1012B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its


    OCR Scan     		Q01S74S KM44C1012B KM44C1012B 110ns KM44C1012B-7 130ns KM44C1012B-8 KM44C1012B-6 150ns 20-LEAD PDF

    km41c1001

    Abstract: No abstract text available
    Text: CMOS DRAM ^ KM41C1001C 1 M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1001C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM41C1001C KM41C1001C-6 KM41C1001C-7 KM41C1001C-8 110ns 130ns 150ns KM41C1001C 576x1 km41c1001 PDF

    DG113

    Abstract: Samsung Capacitor sse samsung pram
    Text: a KM41V4000LL «S SAMSUNG 4M x 1 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG E LECTRONI CS I NC SSE FEATURES 7 ^4 1 4 2 D D 11355 2 = 1 2 _ ISMGK GENERAL DESCRIPTION . Performance range: KM41V4000LL - 7


    OCR Scan     		KM41V4000LL KM41V4000LL 130ns 150ns 180ns 304x1 KM41V4000/L DG113 Samsung Capacitor sse samsung pram PDF