M366S3323DTS
Abstract: No abstract text available
Text: PC133/PC100 Unbuffered DIMM M366S3323DTS M366S3323DTS SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S3323DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133/PC100
M366S3323DTS
M366S3323DTS
32Mx64
16Mx8,
400mil
168-pin
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PDF
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M366S1723DTS
Abstract: No abstract text available
Text: PC133/PC100 Unbuffered DIMM M366S1723DTS M366S1723DTS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1723DTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133/PC100
M366S1723DTS
M366S1723DTS
16Mx64
16Mx8,
400mil
168-pin
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PDF
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m463s0924bt0-l1l
Abstract: K4S281632B-TC1H M463S0924BT0-L1H SAMSUNG TL1L K4S281632B-TC
Text: PC100 µDIMM M463S0924BT0 M463S0924BT0 SDRAM µ DIMM 8Mx64 SDRAM µDIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M463S0924BT0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PC100
M463S0924BT0
M463S0924BT0
8Mx64
8Mx16,
400mil
144-pin
m463s0924bt0-l1l
K4S281632B-TC1H
M463S0924BT0-L1H
SAMSUNG TL1L
K4S281632B-TC
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Untitled
Abstract: No abstract text available
Text: PC133/PC100 Unbuffered DIMM M366S0924DTS M366S0924DTS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133/PC100
M366S0924DTS
M366S0924DTS
8Mx64
8Mx16,
400mil
168-pin
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PDF
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M464S0924DTS
Abstract: No abstract text available
Text: M464S0924DTS PC133/PC100 SODIMM M464S0924DTS SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0924DTS is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung
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M464S0924DTS
PC133/PC100
M464S0924DTS
8Mx64
8Mx16,
100MHz
M464S0924DTS-L1L/C1L
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PDF
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m464s1724dts-l7a samsung
Abstract: M464S1724DTS
Text: M464S1724DTS PC133/PC100 SODIMM M464S1724DTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1724DTS is a 16M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung
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M464S1724DTS
PC133/PC100
M464S1724DTS
16Mx64
8Mx16
100MHz
M464S1724DTS-L1L/C1L
m464s1724dts-l7a samsung
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PDF
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M366S1723DTU
Abstract: No abstract text available
Text: PC133/PC100 Low Profile Unbuffered DIMM M366S1723DTU M366S1723DTU SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1723DTU is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133/PC100
M366S1723DTU
M366S1723DTU
16Mx64
16Mx8,
400mil
168-pin
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PDF
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M374S1723DTS
Abstract: k4s28083
Text: PC133/PC100 Unbuffered DIMM M374S1723DTS M374S1723DTS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1723DTS is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133/PC100
M374S1723DTS
M374S1723DTS
16Mx72
16Mx8,
400mil
168-pin
k4s28083
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PDF
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M366S3323DTU
Abstract: No abstract text available
Text: PC133/PC100 Low Profile Unbuffered DIMM M366S3323DTU M366S3323DTU SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S3323DTU is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133/PC100
M366S3323DTU
M366S3323DTU
32Mx64
16Mx8,
400mil
168-pin
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PDF
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M374S1723DTU
Abstract: No abstract text available
Text: PC133/PC100 Low Profile Unbuffered DIMM M374S1723DTU M374S1723DTU SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1723DTU is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133/PC100
M374S1723DTU
M374S1723DTU
16Mx72
16Mx8,
400mil
168-pin
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PDF
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SAMSUNG TL1L
Abstract: No abstract text available
Text: Preliminary CMOS SDRAM K4S510432M 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S510432M Preliminary CMOS SDRAM
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K4S510432M
512Mbit
K4S510432M
A10/AP
SAMSUNG TL1L
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PDF
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Untitled
Abstract: No abstract text available
Text: PC133/PC100 SODIMM M464S3323DN1 M464S3323DN1 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M464S3323DN1 is a 32M bit x 64 Synchronous Part No.
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PC133/PC100
M464S3323DN1
M464S3323DN1
32Mx64
16Mx8,
M464S3323DN1-C/L7C
133MHz
144-pin
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PDF
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K4S511632M
Abstract: No abstract text available
Text: Preliminary CMOS SDRAM K4S511632M 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S511632M Preliminary CMOS SDRAM
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K4S511632M
512Mbit
16bit
K4S511632M
A10/AP
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PDF
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K4S510832M
Abstract: RA12
Text: Preliminary CMOS SDRAM K4S510832M 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S510832M Preliminary CMOS SDRAM
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K4S510832M
512Mbit
K4S510832M
A10/AP
RA12
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PDF
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K4S641632F-TC75
Abstract: SAMSUNG TL1L 1M Synchronous DRAM samsung
Text: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001
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K4S641632F
64Mbit
16Bit
100MHz
K4S641632F-TC75
SAMSUNG TL1L
1M Synchronous DRAM samsung
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PDF
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K4S510832M
Abstract: RA12
Text: K4S510832M CMOS SDRAM 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S510832M CMOS SDRAM Revision History Revision 0.0 Mar. 2001
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K4S510832M
512Mbit
K4S510832M
A10/AP
RA12
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PDF
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K4S511632
Abstract: K4S511632M
Text: K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S511632M CMOS SDRAM Revision History Revision 0.0 Mar. 2001
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K4S511632M
512Mbit
16bit
K4S511632M
A10/AP
K4S511632
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PDF
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M374S3323DTU
Abstract: No abstract text available
Text: PC133/PC100 Low Profile Unbuffered DIMM M374S3323DTU M374S3323DTU SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S3323DTU is a 32M bit x 72 Synchronous
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PC133/PC100
M374S3323DTU
M374S3323DTU
32Mx72
16Mx8,
400mil
168-pin
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PDF
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K4S641632F-TC75
Abstract: No abstract text available
Text: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001
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K4S641632F
64Mbit
16Bit
100MHz
A10/AP
K4S641632F-TC75
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PDF
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CA12
Abstract: K4S510432M RA12
Text: K4S510432M CMOS SDRAM 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S510432M CMOS SDRAM Revision History Revision 0.0 Mar. 2001
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K4S510432M
512Mbit
K4S510active
A10/AP
CA12
K4S510432M
RA12
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PDF
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K4S561632C-TC75
Abstract: K4S561632C-TC1L
Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Mar. 2001 K4S561632C CMOS SDRAM Revision History Revision 0.1 Feb. 15, 2001
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K4S561632C
256Mbit
16bit
A10/AP
K4S561632C-TC75
K4S561632C-TC1L
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PDF
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K4S641632E-TC75
Abstract: No abstract text available
Text: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.2 Sept. 2001 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM
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K4S641632E
64Mbit
16Bit
K4S641632E
A10/AP
K4S641632E-TC75
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PDF
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K4S281632C-TL1L
Abstract: M466S1723CT2-L1L M466S1723CT3-L1L
Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb C-die base) Rev. 0.1 May 2000 Rev 0.1 May 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924CT0-L1L, C1L • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632C-TL1L, C1L
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144pin)
128Mb
M466S0924CT0-L1L,
8Mx64
8Mx16
K4S281632C-TL1L,
000mil
4K/64ms
128bytes
256bytes
K4S281632C-TL1L
M466S1723CT2-L1L
M466S1723CT3-L1L
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PDF
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samsung date code
Abstract: 16MX64 sdram samsung
Text: SERIAL PRESENCE DETECT PC100 SODIMM PC100 SODIMM 144pin SPD Specification (256Mb B-die base) Rev. 0.1 Apr. 2000 Rev 0.1 Apr. 2000 SERIAL PRESENCE DETECT PC100 SODIMM M464S1654BT1-L1H/L1L, C1H/C1L • Organization : 8MX64 • Composition : 16MX16 *4 • Used component part # : K4S561632B-TL1H/TL1L,TC1H/TC1L
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PC100
144pin)
256Mb
M464S1654BT1-L1H/L1L,
8MX64
16MX16
K4S561632B-TL1H/TL1L
4K/64ms
samsung date code
16MX64
sdram samsung
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PDF
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