P-Channel JFET
Abstract: p-channel jfet rf "N-Channel JFET" Amplifiers N-channel JFET HIGH VOLTAGE high current POWER PNP TRANSISTORS JFET
Text: Section 2 Short Form Specifications NPN High Speed Saturated Switches . 2-3 PNP High Speed Saturated Switches . 2-4
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BSX20
Abstract: No abstract text available
Text: BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS
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BSX20
BSX20
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BSX20
Abstract: BSX19 BSX19-BSX20
Text: BSX19 BSX20 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The BSX19 and BSX20 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for very high speed saturated switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM
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BSX19
BSX20
BSX19
BSX20
BSX19-BSX20
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications.
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BSX20
BSX20
B5X19
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BSX20
Abstract: BSX19 saturated switches
Text: BSX19 BSX20 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES The BSX 19 and BSX 20 are silicon planar epitaxial NPN transistors in Jed ecT O -18 metal case. They are p rim arily intended fo r very high speed saturated switching applications. ABSOLUTE M A XIM U M RATINGS
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BSX19
BSX20
JedecTO-18
G-1949
6-19S0
G-1946
BSX20
saturated switches
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Untitled
Abstract: No abstract text available
Text: FI 3QE ì> m 7121237 QQ31D37 1 • '"P3S-I3' SGS-THOMSON BSX19 BSX20 S 6 S-TH0MS0N HIGH-SPEED SATURATED SWITCHES D E S C R IP T IO N The BSX19 and BSX20 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for very high speed saturated
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QQ31D37
BSX19
BSX20
BSX19
BSX20
71S1237
031DMQ
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BSX19
Abstract: BSX20 1s48 bsx 20 G-1945
Text: BSX19 BSX 20 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES T he BSX 19 and BSX 20 are silic o n p la n a r e p ita x ia l NPN tran sisto rs in J e d e c T O -1 8 m etal case. T h e y are p rim a rily in te n de d fo r very high speed saturated s w itc h in g a p p lica tio n s.
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BSX19
JedecTO-18
BSX20
100mA
G-1945
BSX19
BSX20
1s48
bsx 20
G-1945
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Untitled
Abstract: No abstract text available
Text: BFR92P Low Noise Silicon Bipolar RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available
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BFR92P
AEC-Q101
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marking p1S
Abstract: Q62702-F1488 GMA marking
Text: BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!
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OT-323
Q62702-F1488
900MHz
Dec-10-1996
marking p1S
Q62702-F1488
GMA marking
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2N2894
Abstract: No abstract text available
Text: NPN 2N2894 HIGH-SPEED SATURATED SWITCHES The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS
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2N2894
2N2894
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2N3014 speed transistor
Abstract: 2N3014 2N3014 TO-18
Text: 2N3014 HIGH SPEED SATURATED SWITCHES DESCRIPTION The 2N3014 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case intended for high speed low saturation switching application up to 300 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS
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2N3014
2N3014
2N3014 speed transistor
2N3014 TO-18
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PW 2N
Abstract: 2N2894 2n320 2N3209
Text: 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA. Products approved to CECC 50004-022/023
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2N2894
2N3209
2N2894,
2N3209
PW 2N
2N2894
2n320
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2N834
Abstract: 2N408 mps834
Text: Una. *-/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2N834-MPS834 NPN HIGH SPEED SATURATED LOGIC SWITCHES DIFFUSED SILICON PLANAR* EPITAXIAL TRANSISTORS PD . 826 mW • TA ' 25°C (MPS834)
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2N834-MPS834
MPS834)
MP5834I
2N408
MPSL08
O18-1
MPS834
2N834
2N408
mps834
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2n3013
Abstract: No abstract text available
Text: 2N3013 HIGH SPEED SATURATED SWITCHES DESCRIPTION The 2N3013 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case intended for high speed low saturation switching application up to 300 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS
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2N3013
2N3013
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BFR92W
Abstract: VSO05561 marking p1S
Text: BFR92W NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR92W
VSO05561
OT323
900MHz
Aug-03-2001
BFR92W
VSO05561
marking p1S
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E 94733
Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1488
OT-323
900MHz
E 94733
p1S SOT-89
BFr pnp transistor
SPICE 2G6
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BFQ71
Abstract: Q62702-F775 bfq 96
Text: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.
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Q62702-F775
BFQ71
Q62702-F775
bfq 96
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BFR92P
Abstract: 011v1
Text: BFR92P NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR92P
VPS05161
900MHz
Aug-03-2001
BFR92P
011v1
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Untitled
Abstract: No abstract text available
Text: BFR92W NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR92W
VSO05561
OT323
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Transistor BFR
Abstract: Transistor BFR 191 Transistor BFR 39 BFR 67
Text: BFR 35AP NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non saturated switches at collector currents from 0.5 to 20 mA. C ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type M arking Ordering code
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OT-23
Transistor BFR
Transistor BFR 191
Transistor BFR 39
BFR 67
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5N521
Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.
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BFQ71
Q62702-F775
0235bG5
DGb713S
5N521
VCE05181
bfq 85
siemens Pm 90 87
transistor zo 103 MA 7S 714
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BCR108W
Abstract: BFR92W E6327 VSO05561
Text: BFR92W NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR92W
VSO05561
OT323
BCR108W
BFR92W
E6327
VSO05561
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BC303
Abstract: BC303-BC304 BC304
Text: BC303 BC304 MEDIUM POWER AUDIO DRIVERS DESCRIPTION The BC303 and BC304 are silicon planar epitaxial PNP transistors in TO-39 metal case. They are intended particularly as audio driver stages in commercial and professionnel equipments. In addition they are useful as high speed saturated switches
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BC303
BC304
BC304
BC301
BC302.
BC303-BC304
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2n3209
Abstract: No abstract text available
Text: TELEPHONE: 973 376-2922 20 STERN AVE. (212)227-6005 SPRINQRELD, NEW JERSEY 07081 FAX: (973) 376-8960 U.SA 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case,
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2N2894
2N3209
2N2894,
2N3209
100mA
-10mA
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