Untitled
Abstract: No abstract text available
Text: SB8150DC – SB8200DC WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip C Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency
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PDF
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SB8150DC
SB8200DC
PAK/TO-263
PAK/TO-263,
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Untitled
Abstract: No abstract text available
Text: SB8150D – SB8200D 8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency
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Original
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PDF
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SB8150D
SB8200D
PAK/TO-263
D2PAK/TO-263,
MIL-STD-202,
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GE 337
Abstract: SB8150D SB8150D-T3
Text: SB8150D – SB8200D WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip C Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability
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Original
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PDF
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SB8150D
SB8200D
PAK/TO-263
PAK/TO-263,
GE 337
SB8150D
SB8150D-T3
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Untitled
Abstract: No abstract text available
Text: SB8150D – SB8200D WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip C Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability
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Original
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PDF
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SB8150D
SB8200D
PAK/TO-263,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: SB8150D – SB8200D WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip C Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability
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Original
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PDF
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SB8150D
SB8200D
PAK/TO-263
PAK/TO-263,
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Untitled
Abstract: No abstract text available
Text: SB8150DC – SB8200DC WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip C Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency
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Original
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PDF
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SB8150DC
SB8200DC
PAK/TO-263,
MIL-STD-202,
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SB8150DC
Abstract: SB8150DC-T3
Text: SB8150DC – SB8200DC WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip C Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency
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Original
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PDF
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SB8150DC
SB8200DC
PAK/TO-263
PAK/TO-263,
SB8150DC
SB8150DC-T3
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Untitled
Abstract: No abstract text available
Text: SB8150DC – SB8200DC 8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection
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Original
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PDF
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SB8150DC
SB8200DC
PAK/TO-263
D2PAK/TO-263,
MIL-STD-202,
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Ss1015
Abstract: s40d40c
Text: PRODUCT SELECTION GUIDE Power Rectifiers 1 http://www.wontop.com WON-TOP ELECTRONICS 2 Contents Introduction 4 Selector Guides 5 Schottky Rectifiers 8 SMD 8 Axial Lead 14 Power-pack 16 Superfast Rectifiers 20 SMD 20 Axial Lead 22 Power-pack 23 Ultrafast Rectifiers
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Untitled
Abstract: No abstract text available
Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package 2 D PAK Package Weight mg 1700 Product Group Type No. SB820D –SB8200D SB820DC –SB8200DC SB1020D –SB10200D SB1020DC –SB10200DC SB1620D –SB16200D SB1620DC –SB16200DC
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SB820D
SB8200D
SB820DC
SB8200DC
SB1020D
SB10200D
SB1020DC
SB10200DC
SB1620D
SB16200D
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