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Vishay Intertechnologies T96R157K020ESBS001 Cap Tant Solid 150uF 20V 10% 2-Pin SMD T/R - Tape and Reel (Alt: T96R157K020ESBS001)
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Avnet Americas	T96R157K020ESBS001	Reel		15 Weeks	300	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	T96R157K020ESBS001	Reel			300	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TE Connectivity XSB-S001 Standard Circular Connector XSBBCL,
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TTI	XSB-S001	Each			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Attend Technology Inc 115S-BS00+115S-BT02 Connector: for cards; Nano SIM; SMT; PIN: 6
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TME	115S-BS00+115S-BT02		1,050		1	1 $3.2 10 $3.2 100 $2.56 1000 $2.56 10000 $2.56	Buy Now

SBS001 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SBS001C		Sanyo Semiconductor	Schottky Barrier Diode		Original	PDF
SBS001C-E		Sanyo Semiconductor	DIODE SCHOTTKY 12V 0.5A 3CP		Original	PDF

SBS001 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
EN5401 Abstract: SBS001C Text: Ordering number:EN5401 SBS001C Schottky Barrier Diode 15V, 500mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1148A [SBS001C] Features · Low forward voltage (VF max=0.45V).	Original	PDF	EN5401 SBS001C 500mA SBS001C] SBS001C-applied EN5401 SBS001C
SBS001C Abstract: No abstract text available Text: 注文コード No. N 5 4 0 1 SBS001C No. N 5 4 0 1 20100 SBS001C ショットキバリアダイオード 15V500mA 整流素子用途・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。特長・順電圧が低い（VF max=0.45V）	Original	PDF	SBS001C 15V500mA 500mA 100mA Duty25° ID01115 ID01116 SBS001C
ENN8206 Abstract: CPH5810 MCH3312 Text: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)	Original	PDF	CPH5810 ENN8206 MCH3312) SBS001) ENN8206 CPH5810 MCH3312
on line ups circuit diagrams Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04 Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm	Original	PDF	EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
CPH5810 Abstract: MCH3312 Text: CPH5810 注文コード No. N 8 2 0 6 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード CPH5810 汎用スイッチングデバイス特長・P チャネル MOS 形電界効果トランジスタ（MCH3312）	Original	PDF	CPH5810 MCH3312 SBS001 600mm2 12805PE TA-100105 IT09167 IT09166 CPH5810 MCH3312
TA-0718 Abstract: 2088a FP107 2SB1396 Text: Ordering number:EN5413A FP107 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.	Original	PDF	EN5413A FP107 FP107 2SB1396 SBS001. FP107] TA-0718 2088a
SBE001 Abstract: SB20015M SS2003M SS3003CH ec2d02b SB007-W03C SB10015M SBS004M ss200 SS10015M Text: Schottky Barrier Diodes Shortform Table Surfacemount Type Package Series CONTENTS •Packages ■Quick selection guide ■Recommendation circuit diagram ■Lineup according to packages ・ECSP1006-2 ・ECSP1008-2 ・ECSP1608-4 ・SSFP ・SCH6 ・SMCP ・MCP	Original	PDF	ECSP1006-2 ECSP1008-2 ECSP1608-4 SB30W03T SB40W03T SB10W05T SB25W05T SBE001 SB20015M SS2003M SS3003CH ec2d02b SB007-W03C SB10015M SBS004M ss200 SS10015M
2sc6096 Abstract: 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S Text: Low-Saturation Voltage Transistors Shortform Table Surfacemount Type Package Series CONTENTS • ■ ■ ■ ■ ・・・・・・・・・・・・ ■ Packages Quiｃｋ selection guide Road Map Application Example Lineup according to packages	Original	PDF	ECSP1208-4-F 12A01M 15C01M 12A01C 15C01C 12A02CH 15C02CH 30A02CH 30C02CH 2sc6096 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S
TA-1524 Abstract: A11502 CPH3106 CPH6701 TA72 Text: 注文コードNo.N 6 0 0 7 A No. N 6 0 0 7 A 40300 半導体ニューズ No.6007 とさしかえてください。 CPH6701 特長 PNPシリコンエピタキシャルプレーナ形トランジスタショットキバリアダイオード DC/DCコンバータ用	Original	PDF	CPH6701 PNP12 CPH6701CPH3106SBS001 600mm2 50Hz1 TA-1524 A11502 CPH3106 CPH6701 TA72
CPH3109 Abstract: MCPH6 Text: Trs. for DC-DC Converter No.1 Step-Down DC-DC Converter & Polarity Inverting DC-DC Converter Series MBIT-II Series : VIN VOUT PNP-Tr&Complex (Tr+SBD) *VIN>VOUT Control IC Low VF SBD PNP-Tr Series Device No. VCBO (V) MCH3106 MCH3109 MCH3105 MCH6101 MCH6102	Original	PDF	MCH3106 MCH3109 MCH3105 MCH6101 MCH6102 MCH6103 CPH3106 CPH3114 CPH3107 CPH3115 CPH3109 MCPH6
CPH3106 Abstract: CPH6701 EN6007 Text: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Package Dimensions unit:mm 2153 0.15 2.9 5 4 0.6 6 0.2 [CPH6701] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 • Composite type with a PNP transistor and a Schottky	Original	PDF	EN6007 CPH6701 CPH6701] CPH6701 CPH3106 SBS001, EN6007
CPH5810 Abstract: MCH3312 Text: CPH5810 注文コード No. N 8 2 0 6 三洋半導体データシート N CPH5810 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード汎用スイッチングデバイス特長・P チャネル MOS 形電界効果トランジスタ（MCH3312）	Original	PDF	CPH5810 MCH3312 SBS001 600mm2 12805PE TA-100105 IT09167 IT09166 CPH5810 MCH3312
CPH3106 Abstract: CPH6701 TA-1524 marking PA Text: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Package Dimensions unit:mm 2153 0.15 2.9 5 4 0.6 6 0.2 [CPH6701] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 • Composite type with a PNP transistor and a Schottky	Original	PDF	ENN6007A CPH6701 CPH6701] CPH6701 CPH3106 SBS001, TA-1524 marking PA
2SB1396 Abstract: FP107 ITR10832 ITR10833 ITR10834 ITR10835 Text: 注文コード No. N 5 4 1 3 A FP107 No. N5413A 81000 開発速報 No. ※ 5413 とさしかえてください。 FP107 特長 PNP エピタキシァルプレーナ形シリコントランジスタショットキバリアダイオード複合 DC / DC コンバータ用	Original	PDF	FP107 N5413A FP107 2SB1396 SBS001 250mm2 25max ITR10842 ITR10841 2SB1396 ITR10832 ITR10833 ITR10834 ITR10835

sb30 Abstract: si120 Text: Smal ¡“Signal High-Voltage Schottky Barri er Di odes 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.	OCR Scan	PDF	T0-126 T0-126ML MT980707TR sb30 si120
V23101-D0003-A201 Abstract: V23102-C0003-A211 V23102 V23102 A0006 A111 V23101-D0104-B201 a211 ECR30 c0006a A201 miniature relay Text: Miniature Relay W11 V23102-C0* 2 changeover contacts, bifurcated Immersion cleanable Standard or sensitive For printed circuit mounting, pin arrangement suits 2.54 mm grid in acc. with DIN 40801 and DIN 40803, average Illustration approx. original size Approx. weight 5 g	OCR Scan	PDF	V23102-C0* ECR3017-D ECR0290-A SBS0019-9 ECR0291-I V23101-D0003-A201 V23102-C0003-A211 V23102 V23102 A0006 A111 V23101-D0104-B201 a211 ECR30 c0006a A201 miniature relay
SBI60 Abstract: SBS002C SB600 SB50-09 SB05-05P SBI60-05R to220mf SB50-09J SB50-18 SB60-05H Text: Continued from previous page VRRM V Package type 10(A) 5 40 - TO-220ML SBA50-04J - - - SBA50-04Y TO-220 j - - - - SB60-05J - SB60-05K - - T0-220 - SB80-05H SB80-09 - TO-220ML - SB80-05J SB80-09J - T0-3PB - - - SB80-18 TO-220 - SB100-05H S B 100-09 - SBA100-04J	OCR Scan	PDF	O-220 SB50-09 SB50-18 O-220ML SBA50-04J SB50-09J SBA50-09J O-220MF SB50-18K SBA50-04Y SBI60 SBS002C SB600 SB05-05P SBI60-05R to220mf SB50-18 SB60-05H
B1396 Abstract: transistor s72 Text: SA/Im PCP4/5 series :FPseries 2 High performance composite type devices suitable for surface mounting which make the sets smaller and lighter. note:Uarking is the figures of Type No. Si ¡When mounted on ceramic board( 2 5 0 m m 1X 0 . 8 mm ) (1 uni t) a te D C — D O c o n v e r t o r s ( T R t S B D )	OCR Scan	PDF	FP101 FP102 FP103 FP104 FP105 FP106 FP107 FP108 2SK2167X2 FP402 B1396 transistor s72
transistor s72 Abstract: B1123 B1396 di621 sanyo CG B1121 FP101 FP102 FP103 FP104 Text: SA/Im PCP4/5 series :FPseries 2 High performance composite type devices suitable for surface mounting which make the sets smaller and lighter. note:Uarking is the figures of Type No. Si ¡When mounted on ceramic board( 2 5 0 m m 1X 0 . 8 mm ) (1 uni t) a te D C — D O c o n v e r t o r s ( T R t S B D )	OCR Scan	PDF	FP101 FP102 FP103 FP104 FP105 FP106 FP107 FP108 2SK2151X2 FP403 transistor s72 B1123 B1396 di621 sanyo CG B1121
SB01-05QCA Abstract: No abstract text available Text: SA0O S m a l l - S i g n a l H i g h - V o l t a g e S c h o t t k y Barr ier Di o d e s 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.	OCR Scan	PDF	MT991116TR SB01-05QCA

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SBS001 Search Results

SBS001 Price and Stock

Vishay Intertechnologies T96R157K020ESBS001

TE Connectivity XSB-S001

Attend Technology Inc 115S-BS00+115S-BT02

SBS001 Datasheets (2)

SBS001 Datasheets Context Search

EN5401

SBS001C

ENN8206

on line ups circuit diagrams

CPH5810

TA-0718

SBE001

2sc6096

TA-1524

CPH3109

CPH3106

CPH5810

CPH3106

2SB1396

sb30

V23101-D0003-A201

SBI60

B1396

transistor s72

SB01-05QCA