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    PUI Audio AVW-15SBW-AL-12

    BUZZER PIEZO 12V 92MM BASE
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    PEPPERL+FUCHS GmbH V15SB-W-ABG-PG9

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    DigiKey V15SB-W-ABG-PG9 Box 1
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    Newark V15SB-W-ABG-PG9 Bulk 1
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    Amphenol Industrial Operations ACA3103E18-1SBW(A232)(F80)

    RECEPTACLE
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    Neutrik USA Inc NAUSB-W (ALTERNATE: NAUSB)

    USB 2.0, Reversible Gender Changer, Type A to Type B, D Housing, NAUSB Series | Neutrik NAUSB-W
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    RS NAUSB-W (ALTERNATE: NAUSB) Bulk 193 4 Weeks 1
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    EiKO Global LLC LED-120-PSB-W (ALTERNATE: 3100.47.565-002- WHITE)

    Lamp, LED, T2, #5 Slide, White, 120V, 25mA, 1200EFCMSCP, 10000 Hrs | EIKO LED-120-PSB-W
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    RS LED-120-PSB-W (ALTERNATE: 3100.47.565-002- WHITE) Bulk 152 3 Weeks 1
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    SBWA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 34.5 TO 35.5 GHz LOW-NOISE RECEIVER FRONT END MODEL: SBWA3435N01R FEATURES • • • • RF/LO coverage . IF operation . Conversion gain . Image rejection . 34.5 to 35.5 GHz 20 to 200 MHz


    Original     		PDF SBWA3435N01R SBWA3435N01RA SBWA3435N01RB SBWA343

    A65H73361

    Abstract: A65H83181 SA10 SA11 SA12 SA13 SA15
    Text: A65H73361/A65H83181 Series 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output Preliminary Document Title 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output Revision History Rev. No. 2.0 PRELIMINARY


    Original     		PDF A65H73361/A65H83181 self65H73361P-7 A65H73361 A65H83181 SA10 SA11 SA12 SA13 SA15

    IBM0418A41NLAB

    Abstract: IBM0418A81NLAB IBM0436A41NLAB IBM0436A81NLAB
    Text: IBM0436A41NLAB IBM0418A41NLAB IBM0418A81NLAB IBM0436A81NLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM . Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • Registered outputs • 30 Ω drivers


    Original     		PDF IBM0436A41NLAB IBM0418A41NLAB IBM0418A81NLAB IBM0436A81NLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crrL3325 IBM0418A41NLAB IBM0436A81NLAB

    IBM0418A8ACLAB

    Abstract: IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB
    Text: . IBM0418A4ACLAB IBM0436A8ACLAB Preliminary IBM0418A8ACLAB IBM0436A4ACLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology


    Original     		PDF IBM0418A4ACLAB IBM0436A8ACLAB IBM0418A8ACLAB IBM0436A4ACLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crlh3320 IBM0418A8ACLAB IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB

    IBM0418A11NLAA

    Abstract: IBM0436A11NLAA
    Text: . Preliminary IBM0436A11NLAA IBM0418A11NLAA 32Kx36 & 64Kx18 SRAM Features • 32Kx36 or 64Kx18 organizations • Registered Outputs • 0.25 Micron CMOS technology • 30 Ohm Drivers • Synchronous Pipeline Mode of Operation with Self-Timed Late Write • Common I/O


    Original     		PDF IBM0436A11NLAA IBM0418A11NLAA 32Kx36 64Kx18 32Kx36 nrrL3325 IBM0418A11NLAA IBM0436A11NLAA

    IBM0418A4ANLAB

    Abstract: IBM0418A8ANLAB IBM0436A4ANLAB IBM0436A8ANLAB
    Text: . Preliminary IBM0418A4ANLAB IBM0418A8ANLAB IBM0436A8ANLAB IBM0436A4ANLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25µ CMOS technology • Synchronous Register-Latch Mode of Operation


    Original     		PDF IBM0418A4ANLAB IBM0418A8ANLAB IBM0436A8ANLAB IBM0436A4ANLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crlL3325 IBM0418A8ANLAB IBM0436A4ANLAB

    IBM0418A41XLAB

    Abstract: IBM0418A81XLAB IBM0436A41XLAB IBM0436A81XLAB
    Text: . Preliminary IBM0418A81XLAB IBM0436A81XLAB IBM0418A41XLAB IBM0436A41XLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology


    Original     		PDF IBM0418A81XLAB IBM0436A81XLAB IBM0418A41XLAB IBM0436A41XLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crrh2516 IBM0418A41XLAB IBM0418A81XLAB IBM0436A41XLAB IBM0436A81XLAB

    43bh

    Abstract: marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF
    Text: SONY CXK77P36E160GB / CXK77P18E160GB 16Mb LW R-L HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 8Mb LW R-L w/ EC HSTL High Speed Synchronous SRAMs (256K x 36 or 512K x 18) 4/42/43/44 Preliminary Description The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words


    Original     		PDF CXK77P36E160GB CXK77P18E160GB CXK77P36E160GB -100uA 43bh marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF

    CXK77L18R160GB-3

    Abstract: CXK77L18R160GB-33 CXK77L18R160GB-4
    Text: SONY CXK77L18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAM 1M x 18 3/33/4 Preliminary Description The CXK77L18R160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer


    Original     		PDF CXK77L18R160GB CXK77L18R160GB BGA-119P-021 BGA119-P-1422 CXK77L18R160GB-3 CXK77L18R160GB-33 CXK77L18R160GB-4

    SA82A

    Abstract: IBM043610ULAB4M SA73A
    Text: IBM043610ULAB4M x 1612/10, 3.3VMMDM15DSU-021044922. Preliminary IBM041810ULAB IBM043610ULAB 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • 0.45 Micron CMOS Technology • Synchronous Flow Thru Mode of Operation with Self-Timed Late Write


    Original     		PDF IBM043610ULAB4M 3VMMDM15DSU-021044922. IBM041810ULAB IBM043610ULAB SA82A SA73A

    octal tri state buffer ic

    Abstract: CXK77B1840AGB CXK77B3640AGB SA10 SA11 SA12 SA14 2N218 369 42 sony
    Text: SONY CXK77B3640AGB / CXK77B1840AGB 4Mb Late Write HSTL High Speed Synchronous SRAMs 128K x 36 or 256K x 18 Organization 37/38/4/45 Preliminary Description The CXK77B3640A (organized as 131,072 words by 36 bits) and the CXK77B1840A (organized as 262,144 words by 18 bits)


    Original     		PDF CXK77B3640AGB CXK77B1840AGB CXK77B3640A CXK77B1840A CXK77B3640A octal tri state buffer ic CXK77B1840AGB SA10 SA11 SA12 SA14 2N218 369 42 sony

    CXK77Q18B80AGB

    Abstract: CXK77Q36B80AGB CXK77Q36B80AGB-28 CXK77Q36B80AGB-33
    Text: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77Q36B80AGB CXK77Q18B80AGB CXK77Q36B80AGB CXK77Q18B80AGB 640mA 600mA CXK77Q36B80AGB-28 CXK77Q36B80AGB-33

    IBM041841RLAD7

    Abstract: IBM043641rLAD SA10 SA11 SA13 SA14 SA16 35 x 35 PBGA, 580 100 balls 4k sram
    Text: . Preliminary IBM041841RLAD IBM043641RLAD 128K x 36 & 256K x 18 SRAM Features • 128K x 36 or 256K x 18 Organizations • CMOS Technology • Synchronous Pipeline Mode Of Operation with Self-Timed Late Write • Single Differential PECL Clocks compatible with


    Original     		PDF IBM041841RLAD IBM043641RLAD IBM041841RLAD7 IBM043641rLAD SA10 SA11 SA13 SA14 SA16 35 x 35 PBGA, 580 100 balls 4k sram

    IBM043641WLAD-4

    Abstract: IBM043641WLAD IBM043641WLAD3P IBM043641WLAD3 IBM043641WLAD-3P IBM043641WLA SA10 SA11 SA13 SA16
    Text: . Preliminary IBM041841WLAD IBM043641WLAD 128K x 36 & 256K x 18 SRAM Features • 128K x 36 or 256K x 18 Organizations • CMOS Technology • Synchronous Pipeline Mode Of Operation with Self-Timed Late Write • Single Ended Pseudo-PECL Clock compatible with LVTTL Levels


    Original     		PDF IBM041841WLAD IBM043641WLAD IBM043641WLAD-4 IBM043641WLAD IBM043641WLAD3P IBM043641WLAD3 IBM043641WLAD-3P IBM043641WLA SA10 SA11 SA13 SA16

    Untitled

    Abstract: No abstract text available
    Text: IBM041841QLAD IBM043641QLAD P relim inary 128K x 36 & 256K x 18 SRAM Features • 128K x 36 or 256K x 18 Organizations • Registered Outputs • CMOS Technology • Common I/O • Synchronous Pipeline Mode Of Operation with Self-Timed Late Write • Asynchronous Output Enable and Power Down


    OCR Scan     		PDF IBM041841QLAD IBM043641QLAD

    Untitled

    Abstract: No abstract text available
    Text: IBM041841RLAD IBM043641RLAD Preliminary 128K x 36 & 256K x 18 SRAM Features • 128K x 36 or 256K x 18 Organizations • Registered Addresses, W rite Enables, Synchro­ nous Select and Data Ins • CMOS Technology • Synchronous Pipeline Mode Of Operation with


    OCR Scan     		PDF IBM041841RLAD IBM043641RLAD

    Untitled

    Abstract: No abstract text available
    Text: IBM04184ARLAA IBM04364ARLAA Preliminary 128K X 36 & 256K X 18 SRAM Features • 128K x 36 or 256K x 18 Organizations • Latched Outputs • 0.4 Micron CMOS Technology • Asynchronous Output Enable and Power Down Inputs • Synchronous Register-Latch Mode Of Opera­


    OCR Scan     		PDF IBM04184ARLAA IBM04364ARLAA Selec/96 75H4338 A14-4661

    Untitled

    Abstract: No abstract text available
    Text: IBM041841RLAA IBM043641RLAA Preliminary 128K X 36 & 256K X 18 SRAM Features • 128K x 36 or 256K x 18 Organizations • Registered Outputs • CMOS Technolgy • Asynchronous Output Enable and Power Down Inputs • Synchronous Pipeline Mode Of Operation with


    OCR Scan     		PDF IBM041841RLAA IBM043641RLAA GA14-4667-01

    Untitled

    Abstract: No abstract text available
    Text: I = = = = •= Preliminary IBM0418A81QLAA IBM0418A41 QLAA IBM0436A81QLAA IBM0436A41QLAA 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations


    OCR Scan     		PDF IBM0418A81QLAA IBM0418A41 IBM0436A81QLAA IBM0436A41QLAA 256Kx36 512x18) 128Kx36 256Kx18)

    Untitled

    Abstract: No abstract text available
    Text: IB M 0 4 3 6 1 1 Q L A IB M 0 4 1 8 1 1 Q L A Preliminary 32K X 36 & 64K X 18 SRAM Features • Common I/O • 32K x 36 or 64K x 18 Organizations • Asynchronous Output Enable and Power Down Inputs • 0.5 Micron CMOS Technology • Synchronous Pipeline Mode Of Operation with


    OCR Scan     		PDF IBM043611QLA IBM041811QLA

    Untitled

    Abstract: No abstract text available
    Text: IBM04181ARLAB IBM04361ARLAB Prelim inary 3 2 K X 36 & 6 4 K X 1 8 S R A M Features • 32K x 36 or 64K x 18 O rganizations • Latched O utputs • 0.5 M icron C M O S Technology • A synchronous O utput Enable and Power Down Inputs • S ynchronous R egister-Latch M ode of O p era ­


    OCR Scan     		PDF IBM04181ARLAB IBM04361ARLAB

    Untitled

    Abstract: No abstract text available
    Text: I =¥= =• = Preliminary IBM04184AQLAB IBM04364AQLAB 128K X 36 & 256K X 18 SRAM Features • 128K x 36 or 256K x 18 Organizations Common I/O • 0.4 micron CMOS Technology Asynchronous Output Enable and Power Down Inputs • Synchronous Register Latch Mode Of Opera­


    OCR Scan     		PDF IBM04184AQLAB IBM04364AQLAB

    Untitled

    Abstract: No abstract text available
    Text: IBM04184BSRLAA Prelim in a ry 2 5 6 K X 18 S W S R A M F ea tu r es • 256K x 18 Organizations • Registered Outputs • CMOS Technolgy • Asynchronous Output Enable and Power Down Inputs • Synchronous Pipeline Mode Of Operation with Standard Write • Boundary Scan using limited set ot JTAG 1149.1


    OCR Scan     		PDF IBM04184BSRLAA IBM0418BSRLA

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description T he C X K 77B 3640 is a high speed BiCM O S synchronous static R A M w ith com m on I/O pins, organized as 131,072-w ords by 36-bits. This synchronous SR A M integrates input registers, high speed R A M , output registers/latches, and a one-deep write


    OCR Scan     		PDF CXK77B3640GB A/4/45A/45 072-w 36-bits. 925i2 075i2 page-13 page-21) 128Kx36,