5962-8949701MXA
Abstract: qml-38535 C700 CDFP4-F28 MT42C4256 A3091 5962-8949704MXA SMJ44C251B-10SVM 5962-894970
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device types 03 and 04. Add case outline M. Add vendor CAGE 01295 as source of supply for device types 03 and 04. Update boilerplate. Editorial changes throughout. 94-11-01 M. A. Frye B Corrected number of leads for case outline package T in section 1.2.4
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0EU86
5962-8949701MXA
qml-38535
C700
CDFP4-F28
MT42C4256
A3091
5962-8949704MXA
SMJ44C251B-10SVM
5962-894970
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MT42C4256
Abstract: No abstract text available
Text: MT42C4256 883C 256K x 4 VRAM AUSTIN SEMICONDUCTOR, INC. Limited Supply - Consult Factory 256K x 4 DRAM WITH 512 x 4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89497 • MIL-STD-883 28-Pin DIP (400 MIL) FEATURES •
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MT42C4256
MIL-STD-883
28-Pin
DS000016
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AS4C4256
Abstract: MAS 10 RCD MT42C4256 mt42c4256 -8
Text: AS42C4256 883C 256K x 4 VRAM AUSTIN SEMICONDUCTOR, INC. VRAM 256K x 4 DRAM WITH 512 x 4 SAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View MIL-STD-883 28-Pin DIP (400 MIL) FEATURES Industry standard pinout, timing and functions
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AS42C4256
MIL-STD-883
28-Pin
512-cycle
275mW
DS000016
AS4C4256
MAS 10 RCD
MT42C4256
mt42c4256 -8
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L425
Abstract: lanskroun
Text: Ta CAPACITORS WITH CONDUCTIVE POLYMER ROBUST TO LEAD FREE PROCESS A B S T R A C T : Tantalum capacitors with conductive polymer cathodes have found a place in the market as a low ESR component with reduced ignition. Conductive polymer cathodes however, suffer from instability
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S-TCCPR0M605-N
L425
lanskroun
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atm 38
Abstract: MIL-STD-88 Broadband emitter nm LED
Text: R E L E A S E ATM, FAST ETHERNET & FDDI LINK Fiber Optics 800-A1-FIBER Features & Benefits Applications • • • • • • • • • • • • • Full compliance with OC-3 and STM-1 requirements Data Rates up to 160 Mb/s Industry Standard 1x9 Pin
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800-A1-FIBER
2-A-191A,
MIL-STD-883
atm 38
MIL-STD-88
Broadband emitter nm LED
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mostek mk37000
Abstract: 23C64-25 8K x 8 CMOS ROM
Text: D e | 7Ö 1 1 G 73 GGllflT? b | ~ ROCKWELL INTL/ SC PDTS /7811073 ROCKWÈLL INTL* 62C 118 97 SC PDTS DT'4-6*/3'/5 R23C64 M em o ry P ro d u cts fl!» R23C64 64K 8K X 8 CMOS ROM Rockwell PRELIMINARY DESCRIPTION The Rockwell R 23C 64 is an 8K x 8 (65,536 bits) C M O S readon-memory (R OM ) housed In a 28-pin JEDEC standard package.
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R23C64
R23C64
28-pin
mostek mk37000
23C64-25
8K x 8 CMOS ROM
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Untitled
Abstract: No abstract text available
Text: Preliminary Commercial PEEL 22LV10AZ-25 CMOS Programmable Electrically Erasable Logic Device FEATURES • Low Voltage, Ultra Low Power Operation - Vcc = 2.7 to 3.6 V - Icc =25 uA typical at standby - Icc = 2 mA (typical) at 1 MHz - Meets JEDEC LV Interface Spec (JESD8-A)
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22LV10AZ-25
22LV1OAZ
PEEL22LV1
OAZP-25
24-pin
PEEL22LV1OAZJ-25
28-pin
PEEL22LV1OAZS-25
PEEL22LV1OAZT-25
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Untitled
Abstract: No abstract text available
Text: Preliminary Commercial PEEL 18LV8Z-25 CMOS Programmable Electrically Erasable Logic Device FEATURES • Low Voltage, Ultra Low Power Operation - Vcc = 2.7 to 3.6 V - Icc =25 uA typical at standby - Icc = 2 mA (typical) at 1 MHz - Meets JEDEC LV Interface Spec (JESD8-A)
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18LV8Z-25
20-Pin
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CY7C1335
Abstract: CY7C1336 DO30 3Tg 21
Text: „ ADVANCED INFORMATION CY7C1335 CY7C1336 '# C Y P n h b b 32K x 32 Synchronous Cache RAM Features • Synchronous self-timed writes • Supports 75-MHz Pentium and PowerPC™ operations with zero wait states • Asynchronous output enable • JEDEC-standard 100 TQFP pinout
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CY7C1335
CY7C1336
75-MHz
66-MHz
60-MHz
CY7C1335)
CY7C1336)
CY7C1336
DO30
3Tg 21
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Untitled
Abstract: No abstract text available
Text: M I C R Q N FPM DRÂM MT4C2M8B1 MT4LC2M8B1 H R AM l^nMIVI FEATURES PIN ASSIGNMENT Top View • JEDEC- an d in d u stry -sta n d a rd x8 p in o u ts, tim ing, functions a n d packages • H igh-perform ance, low p o w er CM OS silicon-gate process • Single p o w er su p p ly (+3.3V +0.3V or 5V +10%)
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048-cycle
28-Pin
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Untitled
Abstract: No abstract text available
Text: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Dual Bank Extended Data Out
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IBM11N8645B
IBM11N8735B
IBM11N8645C
IBM11N8735C
8Mx64,
8Mx72
104ns
124ns
SA14-4624-04
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Untitled
Abstract: No abstract text available
Text: AS42C4256 883C 256K X 4 VRAM AUSTIN SEMICONDUCTOR, INC. 256K X 4 DRAM WITH 5 1 2 x 4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883 • • SC SDQ1 SDQ2 TR\-OE\ DQ1 DQ2 ME\-WE\ NC RAS\ A8 A6 A5 A4 , i [ i i i i i i [
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AS42C4256
MIL-STD-883
100ns,
30ns/27ns
120ns,
35ns/35ns
30ns/25ns
DS000016
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Untitled
Abstract: No abstract text available
Text: MT42C4256 883C 256K X 4 VRAM AUSTIN SEMICONDUCTOR, INC. Limited Supply - Consult Factory 256K X 4 DRAM WITH 512x4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89497 • MIL-STD-883 28-Pin DIP (400 MIL) FEATURES SC In d u stry sta n d ard pinout, tim ing a n d functions
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MT42C4256
512x4
MIL-STD-883
28-Pin
1DDB117
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Untitled
Abstract: No abstract text available
Text: PR E LI M IN A R Y 2 MEG X 32 SDRAM DIMM | u iic n o N MT4LSD T 232U SDRAM MODULE FEATURES * JEDEC pinout in a 100-pin, dual in-line memory module (DIMM) * 8M B (2 Meg x 32) * Utilizes 100 MHz SDRAM components * Single +3.3V ±0.3V power supply * Fully synchronous; all signals registered on positive
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100-pin,
096-cycle
100-Pin
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Untitled
Abstract: No abstract text available
Text: IBM13N1649NC IBM13N1809NC 1M x 64/80 1 Bank Unbuffered SDRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 1 Mx64/80 Synchronous DRAM DIMM • Performance: CAS Latency • • • • • • -10 3 jfc K Clock Frequency
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IBM13N1649NC
IBM13N1809NC
Mx64/80
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QML-38535
Abstract: SMJ55166-75HKCM sq10 amplifier SMJ55166-70HKCM ASD910 5962-9564303QXA 5962-9564301QYC smd marking BH rum
Text: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA Changes in accordance with NOR 5962-R098-96. 96-04-09 M. A. Frye Changes in accordance with NOR 5962-R127-97. 96-11-19 M. A. Frye Add device type 03. Update boilerplate. Editorial changes throughout. 97-03-26
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5962-R098-96.
5962-R127-97.
QML-38535
SMJ55166-75HKCM
sq10 amplifier
SMJ55166-70HKCM
ASD910
5962-9564303QXA
5962-9564301QYC
smd marking BH rum
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Untitled
Abstract: No abstract text available
Text: IBM13N3649JC 3M x 64 2 Bank Unbuffered SDRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 3Mx64 Synchronous DRAM DIMM • Performance: 10 CAS Latency ! fcK I Clock Frequency • • • • • • j Units j
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IBM13N3649JC
3Mx64
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2SC76
Abstract: 2n1781 2n725 L51A T03A 2SC175 2SC176 2SC177 2SC73 2SC75
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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B170024
4000n
2SC76
2n1781
2n725
L51A
T03A
2SC175
2SC176
2SC177
2SC73
2SC75
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3T202
Abstract: 25C60 2n1779 2n1780 2N1783 2T52 3N29 2SC175 2SC177 2SC73
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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250nb
2SD63
2SD64
2SD65
2SC89Ã
2SC179t
3T202
25C60
2n1779
2n1780
2N1783
2T52
3N29
2SC175
2SC177
2SC73
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2N1103
Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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buy56-4
BUY56-6
buy56-10
BUY72-4
BUY72-6
BUY72-10
2N1103
2SC5220
2SA479
AC122-30
OC75N
2SC167
2SC166
2N2161
AF185
SFT155
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Untitled
Abstract: No abstract text available
Text: IBM11T8645HP 8M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses Au contacts Optimized for byte-write non-parity applications • 8Mx64 Extended Data Out SO DIMM • Performance: -50
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IBM11T8645HP
8Mx64
104ns
Vss/18VCc
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Untitled
Abstract: No abstract text available
Text: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM
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IBM11T4645MP
IBM11T8645MP
4M/8Mx64
VSs/18VCc
104ns
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OM6025SC
Abstract: OM6031SC ci 3900
Text: OM6025SC OM6Û27SC OM6031SC OM6026SC OM6028SC OM6032SC POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE 400V Thru 1000V, Up To 26 Amp N-Channel, Size 6 MOSFETs, High Energy Capability FEATURES • • • • • • Isolated Hermetic Metal Package
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OM6025SC
OM6031SC
OM6Q26SC
OM6Q28SC
OM6Q32SC
O-258AA
MIL-S-19500,
aT073
00D13ES
ci 3900
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Untitled
Abstract: No abstract text available
Text: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM
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IBM11T4645MP
IBM11T8645MP
4M/8Mx64
256ms
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