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    SC102 DIODE Search Results

    SC102 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SC102 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Application Note for Regulator ICs • Temperature and Reliability Reliability of an IC is generally heavily dependent on operating temperature. Heat radiation must be fully considered, and an ample margin should be given to the radiating area in designing heatsinks. When


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    YG6260 SC102 PDF

    Untitled

    Abstract: No abstract text available
    Text: Application Note for Regulators • Temperature and Reliability Reliability of an IC is generally heavily dependent on operating temperature. Heat radiation must be fully considered, and an ample margin should be given to the radiating area in designing heatsinks. When


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    YG6260 SC102 PDF

    Untitled

    Abstract: No abstract text available
    Text: 600 V, TBD A, IGBT FGD633 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant TO-3PF-3L  VCE - 600 V  IC-TBD A TC = 100 °C


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    FGD633 FGD633-DS PDF

    FMB-24M

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC COMPANY, LTD. SPECIFICATIONS DEVICE TYPE NAME SANKEN SILICON SCHOTTKY BARRIER DIODE FMB-24M 1. Scope 2. General The present specifications shall apply to Sanken silicon diode, FMB-24M. 2.1 Type Silicon Schottky Barrier Diode 2.2 Structure Resin Molded


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    FMB-24M FMB-24M. UL94V-0 September/28/ SSA-03414 FMB-24M PDF

    Untitled

    Abstract: No abstract text available
    Text: 1-1-1 Linear Regulator ICs Application Note • Heat dissipation and Reliability ■ Mounting Torque The reliability of an IC is highly dependent on its operating temperature. Please be sure to apply silicone grease to the IC and to mount it to the heatsink with a proper mounting torque.


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    SI-3000B SI-3000C SI-3000F SI-3000J SI-3000KFE SI-3000R SI-3000ZFE 10-to-20% PDF

    200v dc voltage regulator

    Abstract: rectifier 200v ac to 200v dc
    Text: 1-1-1 Linear Regulator IC Application Note • Heat dissipation and Reliability ■ Mounting Torque The reliability of an IC is highly dependent on its operating temperature. Please be sure to apply silicone grease to the IC and to mount it to the heatsink with a proper mounting torque.


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    SI-3000B SI-3000C SI-3000F SI-3000J SI-3000KF SI-3000N SI-3000R SI-3000ZF SI-3001N SI-3002N 200v dc voltage regulator rectifier 200v ac to 200v dc PDF

    Untitled

    Abstract: No abstract text available
    Text: Switching Type - Application Note •Heat Radiation and Reliability ■Fastening Torque The reliability of an IC is highly dependent on its operating temperature. Design should pay particular attention to ensuring ample space for radiating heat. Be sure to apply silicon grease to the IC before attaching a heatsink,


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    SFPM-62 SI-8000E SI-8200L AM01Z SI-8400L SI-8000S RBV-402 SI-8300L RM10Z F200V, PDF

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO., LTD. FMLB-4204S 1 Scope The present specifications shall apply to an FMLB-4204S. 2 Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3 Flammability UL94V-0 Equivalent 120614 SSA-05446 1/8


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    FMLB-4204S FMLB-4204S. UL94V-0 SSA-05446 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRM = 600 V, IF AV = 20 A, trr = 35 ns(max.) Fast Recovery Diode FMXS-1206S Features Package The FMXS-1206S is a fast recovery diode which realize a peak reverse voltage of 600V, a typical forward voltage drop of 1.4V and typical trr-time of 25ns optimizing a life-time control. It has the characteristics


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    FMXS-1206S FMXS-1206S O-220F-2L FMXS-1206S-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: Dropper Type - Application Note •Heat Radiation and Reliability Fastening Torque The reliability of an IC is highly dependent on its operating temperature. Design should pay particular attention to ensuring ample space for radiating heat. Be sure to apply silicon grease to the IC before attaching a heatsink,


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    SI-3000N SI-3001N SI-3002N SI-3000B SI-3000F SI-3000C SI-3000J SI-3000R SI-3000P SI-3000V PDF

    SI8011

    Abstract: Toshiba axial diodes g-746
    Text: 1-1-2 Switching Mode Regulator ICs Application Note • Heat Dissipation and Reliability ■ Mounting Torque The reliability of an IC is highly dependent on its operating temperature. Please be sure to apply silicone grease to the IC and to mount it to the


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    SI-8400L SI-8500L SI-8511NVS SPI-8000A STA810M STA820M SI-8000HFE RBV-402 AM01Z SI8011 Toshiba axial diodes g-746 PDF

    G746

    Abstract: YG-6260 SI8011 Toshiba axial diodes power Diode 200V 10A YG6260
    Text: 1-1-2 Switching Mode Regulator IC Application Note • Heat Dissipation and Reliability ■ Mounting Torque The reliability of an IC is highly dependent on its operating temperature. Please be sure to apply silicone grease to the IC and to mount it to the


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    10-to20% G746 YG-6260 SI8011 Toshiba axial diodes power Diode 200V 10A YG6260 PDF

    X 4202S

    Abstract: 4202S Sanken marking
    Text: Fast Recovery Diode CTXA-4202S Feb/1/2013 Features Package XA series have improved trr characteristics by applying the optimization of lifetime killer control. The chip is incorporated into the TO-3P high current package having high heat release performance.


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    CTXA-4202S Feb/1/2013 trr---------------25ns X 4202S 4202S Sanken marking PDF

    Untitled

    Abstract: No abstract text available
    Text: VRM = 400 V, IF AV = 20 A, trr = 50 ns(max.) Fast Recovery and High Power Diode CTLD-4204S Features Package The CTLD-4204S is a fast recovery diode which realize a peak reverse voltage of 400 V, a typical forward voltage drop of 1.25 V and typical trr of 22 ns


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    CTLD-4204S CTLD-4204S CTLD-4204S-DS PDF

    XS4603

    Abstract: XS460
    Text: VRM = 300 V, IF AV = 60 A, trr = 50 ns(max.) Fast Recovery and High Power Diode CTXS-4603S Features Package The CTXS-4603S is a high power and fast recovery diode which realize a peak reverse voltage of 300 V, a typical forward voltage drop of 1.05 V (typ.) and typical


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    CTXS-4603S CTXS-4603S CTXS-4603S-DS XS4603 XS460 PDF

    shinetsu G746

    Abstract: SLA7051MLF871 stepper motor characteristics curve G746 SC102 SLA7051M YG6260
    Text: M Dr ot ive or r Data Sheet 28210D* SLA7051M UNIPOLAR STEPPER-MOTOR TRANSLATOR/PWM DRIVER Combining low-power CMOS logic with high-current, high-voltage power FET outputs, the SLA7051M translator/driver provides complete control and drive for a two-phase unipolar stepper motor with internal


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    28210D* SLA7051M SLA7051M SC102, YG6260, shinetsu G746 SLA7051MLF871 stepper motor characteristics curve G746 SC102 YG6260 PDF

    LM motor driver

    Abstract: SLA7051MLF871 YG6260 G746 SC102 SLA7051M SLA7051MLF shinetsu G746 motor driver step
    Text: SLA7051M Data Sheet 28210C* or r t o ive M r D UNIPOLAR STEPPER-MOTOR TRANSLATOR/PWM DRIVER Combining low-power CMOS logic with high-current, high-voltage power FET outputs, the SLA7051M translator/driver provides complete control and drive for a two-phase unipolar stepper motor with internal


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    SLA7051M 28210C* SLA7051M SC102, YG6260, LM motor driver SLA7051MLF871 YG6260 G746 SC102 SLA7051MLF shinetsu G746 motor driver step PDF

    Untitled

    Abstract: No abstract text available
    Text: VRM = 200 V, IF AV = 45 A, trr = 35 ns(max.) Fast Recovery and High Power Diode CTXS-4452S Features Package The CTXS-4452S is a high current and fast recovery diode which realize a peak reverse voltage of 200V, a typical forward voltage drop of 0.92V and typical


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    CTXS-4452S CTXS-4452S 500ited. CTXS-4452S-DS PDF

    XS460

    Abstract: No abstract text available
    Text: VRM = 300 V, IF AV = 60 A, trr = 50 ns(max.) Fast Recovery and High Power Diode CTXS-4603S Features Package The CTXS-4603S is a high power and fast recovery diode which realize a peak reverse voltage of 300 V, a typical forward voltage drop of 1.05 V (typ.) and typical


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    CTXS-4603S CTXS-4603S CTXS-4603S-DS XS460 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRM = 600 V, IF AV = 20 A, trr = 30 ns(max.) Fast Recovery and High Power Diode Preliminary CTLD-6206S Features Package The CTLD-6206S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.4 V


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    CTLD-6206S CTLD-6206S O-247-3L CTLD-6206S-DS PDF

    XS460

    Abstract: No abstract text available
    Text: VRM = 600 V, IF AV = 60 A, trr = 35 ns(max.) Fast Recovery and High Power Diode CTXS-4606S Features Package The CTXS-4606S is a high power diode of the low-noise and low-loss which realize a peak reverse voltage of 600V. Typical forward voltage drop of 1.45V


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    CTXS-4606S CTXS-4606S CTXS-4606S-DS XS460 PDF

    XS4202

    Abstract: No abstract text available
    Text: VRM = 200 V, IF AV = 20 A, trr = 30 ns(max.) Fast Recovery and High Power Diode CTXS-4202S Features Package The CTXS-4202S is a fast recovery diode which realize a peak reverse voltage of 200 V, a typical forward voltage drop of 0.90 V and typical trr of 18 ns


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    CTXS-4202S CTXS-4202S CTXS-4202S-DS XS4202 PDF

    sanken SAPM01P

    Abstract: sapm01p SAPM01 sanken SAP 61432 M01N SAPM01N G746 SC102 YG6260
    Text: SAPM01N 1 Scope The present specifications shall apply to Sanken silicon power MOSFET with built-in temperature compensation diodes, SAPM01N, a complementary device of the SAPM01P, for audio amplifier applications. 2 Appearance and outline drawings 2-1 Appearance


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    SAPM01N SAPM01N, SAPM01P, 251shot 00E-04 00E-03 00E-02 00E-01 SSE-22334 sanken SAPM01P sapm01p SAPM01 sanken SAP 61432 M01N SAPM01N G746 SC102 YG6260 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRM = 300 V, IF AV = 60 A, trr = 100 ns(max.) Low VF and High Power Diode CTNS-4603S Features Package The CTNS-4603S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 300 V. Typical forward voltage drop of 0.95 V (typ.) is realized by optimizing the relationship of


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    CTNS-4603S CTNS-4603S CTNS-4603S-DS PDF