SiA929DJ
Abstract: No abstract text available
Text: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual
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SiA929DJ
SC-70-6
SC-70
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET
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SiA411DJ
SC-70
SC-70-6L-Single
SiA411DJ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SIA456DJ
Abstract: No abstract text available
Text: New Product SiA456DJ Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA456DJ
SC-70
SC-70-6L-Single
SiA456DJ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Preliminary PL611s-28 1.8V-3.3V PicoPLL TM , World’s Smallest Programmable Clock FEATURES DESCRIPTION • Designed for Very Low-Power applications Input Frequency: o Fundamental Crystal: 10MHz to 50MHz o Reference Input: 1MHz to 200MHz Accepts >0.1V reference signal input voltage
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PL611s-28
10MHz
50MHz
200MHz
65MHz
90MHz
125MHz
27MHz
PL611s-28
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Untitled
Abstract: No abstract text available
Text: 05240 PLR0504F Only One Name Means ProTek’Tion STEERING DIODE / TVS ARRAY COMBO APPLICATIONS ✔ Ethernet - 10/100/1000 Base T ✔ Cellular Phones ✔ Handheld & Portable Electronics ✔ Video/Graphics Card ✔ USB 2.0 Interface ✔ DVI Interface IEC COMPATIBILITY EN61000-4
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PLR0504F
EN61000-4)
SC70-6L
5/50ns
SC-70-6L
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marking code vishay SILICONIX
Abstract: SIA915DJ
Text: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiA915DJ
SC-70
2002/95/EC
SC-70-6
SiA915DJ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code vishay SILICONIX
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SIA461DJT1GE3
Abstract: 63838 sia461djt
Text: New Product SiA461DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. - 20 ID (A)a 0.033 at VGS = - 4.5 V - 12 0.042 at VGS = - 2.5 V - 12 0.055 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package
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SiA461DJ
SC-70
SC-70-6L-Single
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIA461DJT1GE3
63838
sia461djt
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SiA445EDJ
Abstract: SIA445EDJ-T1-GE3
Text: New Product SiA445EDJ Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) Max. ID (A) 0.0165 at VGS = - 4.5 V - 12a 0.0185 at VGS = - 3.7 V - 12a 0.0300 at VGS = - 2.5 V a Qg (Typ.) 23 nC - 12 PowerPAK SC-70-6L-Single
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SiA445EDJ
SC-70-6L-Single
SC-70
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIA445EDJ-T1-GE3
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Untitled
Abstract: No abstract text available
Text: New Product SiA462DJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a 0.018 at VGS = 10 V 12 0.020 at VGS = 6 V 12 0.022 at VGS = 4.5 V 12 Qg (Typ.) 5 nC • TrenchFET Power MOSFET • 100 % Rg Tested
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SiA462DJ
SC-70-6L-Single
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiA400EDJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 12 0.025 at VGS = 2.5 V 12 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area
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SiA400EDJ
SC-70
SC-70-6L-Single
SiA400EDJ-T1-GE3electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SiA413DJ
Abstract: SiA413DJ-T1-GE3
Text: New Product SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12 a 0.10 at VGS = - 1.5 V -3 • Halogen-free • TrenchFET Power MOSFET
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SiA413DJ
SC-70
SC-70-6L-Single
08-Apr-05
SiA413DJ-T1-GE3
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702Y
Abstract: dual mosfet "marking code 30" sot 26 Dual N-Channel MOSFET SC-70-6L SPN7002D SPN7002DS36RG
Text: SPN7002D Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7002D is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while
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SPN7002D
SPN7002D
300mA
702Y
dual mosfet "marking code 30"
sot 26 Dual N-Channel MOSFET
SC-70-6L
SPN7002DS36RG
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SiA411DJ
Abstract: SiA411DJ-T1-GE3
Text: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET
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SiA411DJ
SC-70
SC-70-6L-Single
08-Apr-05
SiA411DJ-T1-GE3
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Untitled
Abstract: No abstract text available
Text: New Product SiA906EDJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 4.5 0.063 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA906EDJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SiA425EDJ
Abstract: bmx - 01 SiA425EDJ-T1-GE3
Text: SiA425EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = - 4.5 V - 4.5a 0.065 at VGS = - 3.6 V - 4.5a 0.080 at VGS = - 2.5 V - 4.5a 0.120 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21
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SiA425EDJ
SC-70
2002/95/EC
SC-70-6L-Single
18-Jul-08
bmx - 01
SiA425EDJ-T1-GE3
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SMF05C
Abstract: SMF05C.TC SC70-6L
Text: SMF05C TVS Diode Array For ESD and Latch-Up Protection PRELIMINARY PROTECTION PRODUCTS Description Features The SMF series TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD and other voltage-induced transient events. They are
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SMF05C
SC70-6L
SMF05C
SMF05C.TC
SC70-6L
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Untitled
Abstract: No abstract text available
Text: New Product SiA777EDJ Vishay Siliconix N- and P-Channel for Level Shift Load Switch FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2800 V P-Channel 1900 V • 100 % Rg Tested
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SiA777EDJ
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiA449DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) ID (A) 0.020 at VGS = - 10 V - 12a 0.024 at VGS = - 4.5 V - 12a 0.038 at VGS = - 2.5 V a Qg (Typ.) 23.1 nC - 12 PowerPAK SC-70-6L-Single
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SiA449DJ
SC-70-6L-Single
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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AOZ8000CIL
Abstract: AOZ8000HIL mark VP sot23-6 AOZ8000 AOZ8000DIL SC-70-6 2x2 dfn AOZ8000CI
Text: AOZ8000 Ultra-Low Capacitance TVS Diode Array General Description Features The AOZ8000 is a transient voltage suppressor array designed to protect high speed data lines from ESD and lightning. ● This device incorporates eight surge rated, low capacitance steering diodes and a TVS in a single package.
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AOZ8000
AOZ8000
OT-23,
SC-70
AOZ8000CIL
AOZ8000HIL
mark VP sot23-6
AOZ8000DIL
SC-70-6
2x2 dfn
AOZ8000CI
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AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower
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O-252)
O-263)
MSOP-10
SC70-3
SC70-6
SC-89-3
SC-89-6
OD523
OD923
OT23-3
AON6704L
AOZ1094
AOZ1094AI
AON7403
AOZ1242
AOZ1014AI
AOZ1212AI
AOZ1361
AON6414AL
Aoz1025
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Untitled
Abstract: No abstract text available
Text: SiA921EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a Qg (Typ.) 4.9 nC PowerPAK SC-70-6 Dual 1 S1 2 G1 3 D2 D1 D1 6 • Load Switch, PA Switch and Battery Switch for Portable
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SiA921EDJ
SC-70
SC-70-6
SiA921EDJ-T1-GE3
SiA921EDJ-T4-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: 05138 SMF05C thru SMF24C Only One Name Means ProTek’Tion STANDARD CAPACITANCE TVS ARRAY APPLICATIONS ✔ Notebook Computers ✔ Cellular Phone Base Stations ✔ Personnal Digital Assistant PDA ✔ Digital Cameras IEC COMPATIBILITY (EN61000-4) ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV
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SMF05C
SMF24C
EN61000-4)
5/50ns
SC-70-6L
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05350
Abstract: No abstract text available
Text: 05350 PAM05SC700504F Only One Name Means ProTek’Tion ultra low capacitance steering diode/tvs array Description The PAM05SC700504F is subminiature, ultra low capacitance steering diode/TVS suppressor array designed for the protection of sensitive IC components from the damaging effects of Electrostatic Discharge ESD and Electrical Fast
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PAM05SC700504F
PAM05SC700504F
SC70-6L
05350
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DG4157DL-T1-GE3
Abstract: DG4157D DG4157
Text: DG4157 Vishay Siliconix Low Voltage, 1 Single SPDT Analog Switch 1:2 Multiplexer with Power Down Protection DESCRIPTION FEATURES The DG4157 is a high performance single pole double throw analog switch designed for 1.65 V to 5.5 V operation with single power rail.
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DG4157
DG4157
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
DG4157DL-T1-GE3
DG4157D
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