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    SCHOTTKY DIODE 40V 6A Search Results

    SCHOTTKY DIODE 40V 6A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY DIODE 40V 6A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTNS618MC ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A


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    ZXTNS618MC ZX3CDBS1M832 PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTPS718MC ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A VR = 40V; VF = 500mV @1A ; IC=1A


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    ZXTPS718MC ZX3CD2S1M832 PDF

    A1 dual diode

    Abstract: ZX3CDBS1M832 MLP832 ZX3CDBS1M832TA ZX3CDBS1M832TC
    Text: ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual


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    ZX3CDBS1M832 500mV A1 dual diode ZX3CDBS1M832 MLP832 ZX3CDBS1M832TA ZX3CDBS1M832TC PDF

    A1 dual diode

    Abstract: Schottky Diode 40V 5A dual MLP832 ZX3CD2S1M832 ZX3CD2S1M832TA ZX3CD2S1M832TC
    Text: ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual


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    ZX3CD2S1M832 500mV A1 dual diode Schottky Diode 40V 5A dual MLP832 ZX3CD2S1M832 ZX3CD2S1M832TA ZX3CD2S1M832TC PDF

    Untitled

    Abstract: No abstract text available
    Text: ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual


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    ZX3CDBS1M832 PDF

    A1 dual diode

    Abstract: MLP832 ZX3CD2S1M832 ZX3CD2S1M832TA ZX3CD2S1M832TC
    Text: ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual


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    ZX3CD2S1M832 500mV A1 dual diode MLP832 ZX3CD2S1M832 ZX3CD2S1M832TA ZX3CD2S1M832TC PDF

    A1 dual diode

    Abstract: ZX3CDBS1M832 MLP832 ZX3CDBS1M832TA ZX3CDBS1M832TC
    Text: ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual


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    ZX3CDBS1M832 500mV A1 dual diode ZX3CDBS1M832 MLP832 ZX3CDBS1M832TA ZX3CDBS1M832TC PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTNS618MC ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A


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    ZXTNS618MC ZX3CDBS1M832 PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS718MC ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A


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    ZXTPS718MC ZX3CD2S1M832 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBT150-04J Ordering number : ENN7792 SBT150-04J Preliminary Schottky Barrier Diode Twin Type • Cathode Common 40V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • • •


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    SBT150-04J ENN7792 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBT150-04Y Ordering number : ENN7793 SBT150-04Y Preliminary Schottky Barrier Diode Twin Type • Cathode Common 40V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters and choppers). Features • • • • •


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    SBT150-04Y ENN7793 SBT150-04Y-applied PDF

    Untitled

    Abstract: No abstract text available
    Text: SBT150-04Y Ordering number : ENN7793 SBT150-04Y Schottky Barrier Diode Twin Type • Cathode Common 40V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters and choppers). Features • • • • • • Guaranteed up to Tj=150°C.


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    SBT150-04Y ENN7793 SBT150-04Y-applied PDF

    SBT150-04J

    Abstract: No abstract text available
    Text: SBT150-04J Ordering number : ENN7792 SBT150-04J Schottky Barrier Diode Twin Type • Cathode Common 40V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • • • Guaranteed up to Tj=150°C.


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    SBT150-04J ENN7792 SBT150-04J PDF

    SBT150-04Y

    Abstract: No abstract text available
    Text: SBT150-04Y Ordering number : ENN7793 SBT150-04Y Schottky Barrier Diode Twin Type • Cathode Common 40V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters and choppers). Features • • • • • • Guaranteed up to Tj=150°C.


    Original
    SBT150-04Y ENN7793 SBT150-04Y-applied SBT150-04Y PDF

    Untitled

    Abstract: No abstract text available
    Text: SBT150-04J Ordering number : ENN7792 SBT150-04J Schottky Barrier Diode Twin Type • Cathode Common 40V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • • • Guaranteed up to Tj=150°C.


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    SBT150-04J ENN7792 PDF

    transistor A2

    Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
    Text: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A


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    ZXTNS618MC 150mV 500mV DS31933 transistor A2 Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A


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    ZXTNS618MC 150mV 500mV DFN3020B-8 DS31933 PDF

    Schottky Diode 40V 6A

    Abstract: No abstract text available
    Text: YG831C04R 40V / 6A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 Low VF Super high speed switching. High reliability by planer design. 3 1.2±0.2 13Min 3.7±0.2 Features 2 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2


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    YG831C04R O-22OF15) 13Min SC-67 Schottky Diode 40V 6A PDF

    transistor A2

    Abstract: diodes transistor marking k2 dual DFN3020B-8
    Text: A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage -220mV max @ -1A


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    ZXTPS718MC -220mV 500mV DFN3020B-8 DS31937 transistor A2 diodes transistor marking k2 dual DFN3020B-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage -220mV max @ -1A


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    ZXTPS718MC -220mV 500mV DFN3020B-8 DS31937 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 11DQ03 11DQ04 1.1A/30— 40V FEATURES • Miniature Size • Low Forward Voltage Drop • Low Power Loss, High Efficiency 0 High Surge Capability • 30 Volts through 100 Volts Types Available " 52mm Inside Tape Spacing Package Available


    OCR Scan
    11DQ03 11DQ04 11DQ03 bbl5123 PDF

    11DQ03

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 1.1A/30— 40V 11DQ03 11DQ04 FEATURES Miniature Size ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available ° 52nun Inside Tape Spacing Package Available


    OCR Scan
    A/30-- 11DQ03 11DQ04 52nun 11DQ04 10x10mm PDF

    11EQS04 Low Forward Voltage Drop Diode

    Abstract: 11EQS04 11EQS03
    Text: SCHOTTKY BARRIER DIODE 11EQS03 11EQS04 1.1A/30— 40V FEATURES o Miniature Size 2.7C106 .'DIA MAX • Low Forward Voltage Drop « Low Power Loss, High Efficiency 0.54 .021) DIA “ High Surge Capability . 27(1.06) MIN 20 Volts thru 100 Volts Types Available


    OCR Scan
    11EQS03 11EQS04 7c106) 11EQS03 10msec Tj-25 20inVrnis f-100KHz bbl51E3 11EQS04 Low Forward Voltage Drop Diode 11EQS04 PDF

    EC10QS03

    Abstract: EC10QS04 Scans-0020000
    Text: SCHOTTKY BARRIER DIODE EC10QS03 EC10QS04 1.1A/30~40V FEATURES o Miniature Size, Surface Mount Device 2.21.087 1.8Ö71) ° Low Forward Voltage Drop _ 4.7U68)_ 0.2 .Q08) 4.3(.l6l" ° Low Power Loss, High Efficiency r-i— 1 f 2.71.106) ° High Surge Capability


    OCR Scan
    EC10QS03 EC10QS04 EC10QS03 Van-40 I110msec1' Tj-251C 20mVrms l00kHi bbl5153 EC10QS04 Scans-0020000 PDF