YG803C06
Abstract: application FULL WAVE RECTIFIER diode full wave rectifier 6 v
Text: YG803C06 15A Schottky barrier diode (60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection
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YG803C06
O-220F
YG803C06
application FULL WAVE RECTIFIER
diode full wave rectifier 6 v
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Untitled
Abstract: No abstract text available
Text: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Tj=125°C, typ Applications Features Low VF Optimized for 3.3V 5V output application
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YG803C06R
YG803C06
O-220F
500ns,
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Untitled
Abstract: No abstract text available
Text: 20A Integrated PowIRstage FEATURES IR3742 DESCRIPTION • Single input voltage range from 5V to 21V Wide input voltage range from 1.0V to 21V with external VCC bias voltage Integrated MOSFET drivers, Control FET, Synchronous FET with Schottky diode,
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IR3742
IR3742
JESD22-A115A)
JESD22-A114F)
JESD22-C101D)
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YG803C06
Abstract: No abstract text available
Text: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection
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YG803C06R
O-220F
YG803C06
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14916AA-N •General description ■Features ELM14916AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage
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ELM14916AA-N
ELM14916AA-N
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14914AA-N •General description ■Features ELM14914AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage
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ELM14914AA-N
ELM14914AA-N
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Untitled
Abstract: No abstract text available
Text: MP8352 3V-6V Input, 6A, 600kHz Step-Down Converter with Synchronizable Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP8352 is a monolithic step-down switch mode converter with a built in internal power MOSFET. It achieves 6A continuous output
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MP8352
600kHz
MP8352
14-pin
MO-229,
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14912AA-N •General description ■Features ELM14912AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage
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ELM14912AA-N
ELM14912AA-N
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MP38892
Abstract: z 40 mosfet
Text: MP38892 6A, 42V, 420KHz Step-Down Converter with Synchronizable Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP38892 is a monolithic step-down switch mode converter with a built in, internal high-side power MOSFET. It achieves 6A continuous
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MP38892
420KHz
MP38892
MS-012,
z 40 mosfet
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AO4607
Abstract: AO4607L
Text: AO4607 Complementary Enhancement Mode Field Effect Transistor General Description The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A
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AO4607
AO4607
AO4607L
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AO4914
Abstract: No abstract text available
Text: AO4914 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4914 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and
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AO4914
AO4914
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AO4916
Abstract: mpf230 85A schottky
Text: AO4916 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4916 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and
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AO4916
AO4916
mpf230
85A schottky
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14900AA-N •General description ■Features ELM14900AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)
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ELM14900AA-N
ELM14900AA-N
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Untitled
Abstract: No abstract text available
Text: AO4914 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4914 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and
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AO4914
AO4914
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SONY APS 252 power supply
Abstract: 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor
Text: Power−Supply Cookbook Maxim Power Supply Cookbook Compiled: November 2010 Available at: http://www.maxim−ic.com/cookbook/ Maxim has developed power supplies for a wide range of applications. Choose the specifications that most closely meet your needs. Then view a circuit design, complete with schematic diagram and
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CDRH6D28-100
MAX1701
100uF
100pF
560pF
NDC632P
QS03L
220uF
SONY APS 252 power supply
8 pin ic 9435A
SONY APS 283
SONY APS 252
IRF 9460
SONY APS 254
SONY APS 283 power supply
transformer 18-0-18
step down transformer 12-0-12
MPSA06 fairchild transistor
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AO4914A
Abstract: AO4914AL
Text: AO4914A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4914A uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and
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AO4914A
AO4914A
AO4914AL
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14906AA-N •General description ■Features ELM14906AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=7A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)
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ELM14906AA-N
ELM14906AA-N
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14902AA-N •General description ■Features ELM14902AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)
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ELM14902AA-N
ELM14902AA-N
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14904AA-N •General description ■Features ELM14904AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)
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ELM14904AA-N
ELM14904AA-N
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Untitled
Abstract: No abstract text available
Text: AO4914 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4914 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and
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AO4914
AO4914
AO4914L
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pin configuration of 7486 IC
Abstract: AO4912L AO4912 AO4914 AO4914L
Text: Rev 6: May 2005 AO4914 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4914 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and
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AO4914
AO4914
AO4914L
pin configuration of 7486 IC
AO4912L
AO4912
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Untitled
Abstract: No abstract text available
Text: s /3 '.v h + - a " u y y- Schottky Barrier Diode Single Diode Surface Mount M2FM3 30V 6A >/J'§kSM D >Tjl50°C Ufi V f = 0.46 V MS Ir = 0.2 mA ID C /D C nyjK -2 ‘ “ B IS s A ° V D > lifêÉiift«* rsi fi < ti $ v> RATINGS Absolute Maximum Ratings isÊ » & ^i|rêa
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Tjl50
50HziE5K
50HzIE5
J515-5
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vno2n
Abstract: st microelectronics powerso-10
Text: / = 7 SCS-THOM SON Ä T # MaB@üliOTFi@0H0 8 VN02NSP VN02NPT HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE VN02NSP V N02N PT V dss RDS on I out Vcc 60 V 0.4 n 6 A 26 V 60 V 0.4 Q 6 A 26 V . OUTPUT CURRENT (CONTINUOUS): 6A @ Tc=25°C . 5V LOGIC LEVEL COMPATIBLE INPUT
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VN02NSP
VN02NPT
VN02NSP/VN02NPT
vno2n
st microelectronics powerso-10
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Untitled
Abstract: No abstract text available
Text: £ = T SG S-T H O M SO N HIGH SIDE SMART POWER SOLID STATE RELAY TARGET DATA TYPE V dss RD S on (OUT Vcc VN05H SP 45 V 0.18 £2 12 A 36 V • OUTPUT CURRENT (CONTINUOUS): 6A @ T c = 2 5 ° C ■ 5V LOGIC LEVEL COMPATIBLE INPUT . THERMAL SHUT-DOWN . UNDER VOLTAGE SHUT-DOWN
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VN05H
VN05HSP
PowerSO-10â
0068039-C
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