SOD-80C
Abstract: No abstract text available
Text: BAS86 Schottky barrier single diode 25 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed SOD80C glass Surface-Mounted Device
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BAS86
OD80C
SOD-80C
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TPCA8A09-H
Abstract: No abstract text available
Text: TPCA8A09-H MOSFETs Silicon N-Channel MOS U-MOS-H/Schottky Barrier Diode TPCA8A09-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max)
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TPCA8A09-H
TPCA8A09-H
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BAS85-GS18
Abstract: No abstract text available
Text: BAS85 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage • The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAS85
DO-35
BAT85
AEC-Q101
2002/95/EC
2002/96/EC
OD-80
GS18/10
GS08/2
2011/65/EU
BAS85-GS18
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STPS20
Abstract: No abstract text available
Text: STPS20SM60C Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A1 K A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode
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STPS20SM60C
STPS20SM60C
O-220AB,
O-220FPAB,
STPS20SM60CG-TR
STPS20SM60CR
O-220AB
STPS20SM60CT
O-220FPAB
STPS20SM60CFP
STPS20
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DMS3016SS
Abstract: DMS3016SSSA
Text: DMS3016SSSA N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS ON - minimizes conduction losses
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DMS3016SSSA
AEC-Q101
DS35073
621-MMBT3904LP-7B
MMBT3904LP-7B
DMS3016SS
DMS3016SSSA
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BAS70-02V-V-G-08
Abstract: BAS70-02V-V BAS70-02
Text: BAS70-02V-V-G Vishay Semiconductors Small Signal Schottky Diode Features • This diode features very low turn-on voltage and fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAS70-02V-V-G
OD-523
2002/95/EC
2002/96/EC
08/3K
15K/box
BAS70-02V-V-G
BAS70-02V-V-G-08
2011/65/EU
BAS70-02V-V
BAS70-02
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BAT54-02V-V-G-08
Abstract: SOD-52
Text: BAT54-02V-V-G Vishay Semiconductors Small Signal Schottky Diode Features • This diode features very low turn-on voltage and fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT54-02V-V-G
OD-523
2002/95/EC
2002/96/EC
18/3K
10K/box
08/3K
15K/box
BAT54-02V-V-G
BAT54-02V-V-G-08
SOD-52
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Schottky
Abstract: No abstract text available
Text: SK15H45 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - For use as Bypass diode in Solar application.
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SK15H45
2011/65/EU
2002/96/EC
AEC-Q101
JESD22-B102
D1310004
Schottky
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SMS7621
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SMS7621-092: 0201 Surface Mount Low Barrier Silicon Schottky Diode Anti-Parallel Pair Applications • Sub-harmonic mixer circuits • Frequency multiplication Features • Low barrier height • Suitable for use to 26 GHz or higher
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SMS7621-092:
J-STD-020
SMS7621-092
201742B
SMS7621
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Untitled
Abstract: No abstract text available
Text: BAT54W-V Vishay Semiconductors Small Signal Schottky Diode Features • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT54W-V
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
GS18/10k
10k/box
GS08/3k
15k/box
BAT54W-V
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bat54ws-v-gs08
Abstract: BAT54WSVGS08
Text: BAT54WS-V Vishay Semiconductors Small Signal Schottky Diode Features • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT54WS-V
AEC-Q101
2002/95/EC
2002/96/EC
OD-323
GS18/10k
10k/box
GS08/3k
15k/box
BAT54WS-V
bat54ws-v-gs08
BAT54WSVGS08
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Untitled
Abstract: No abstract text available
Text: CES521 Schottky Barrier Diode Silicon Epitaxial CES521 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.5 V (max). (2) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages. 3. Packaging and Internal Circuit
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CES521
OD-523
SC-79
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Untitled
Abstract: No abstract text available
Text: CUS08F30 Schottky Barrier Diode Silicon Epitaxial CUS08F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.40 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit
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CUS08F30
OD-323
SC-76
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Untitled
Abstract: No abstract text available
Text: CUS521 Schottky Barrier Diode Silicon Epitaxial CUS521 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.5 V (max) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit
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CUS521
OD-323
SC-76
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Untitled
Abstract: No abstract text available
Text: SN74S1051 12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS018B – SEPTEMBER 1990 – REVISED MARCH 2003 D D D D, N, NS, OR PW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 12-Bit Array Structure Suited for
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SN74S1051
12-BIT
SDLS018B
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR770DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si4916
Abstract: No abstract text available
Text: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V
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Si4916DY
Si4916DY-T1-E3
Si4916DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4916
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marking code C4 Sot 23-5
Abstract: sc70-3 PCB PAD Marking Code ABC marking code 54 marking code tc sot 363 AN1124 SC70-6 agilent marking code 8C marking code part marking ab sc-70
Text: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-281x Series Features • Surface Mount Packages • Low Flicker Noise • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options
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HSMS-281x
OT-23/SOT-143
d70-3
OT-363
SC70-6
5968-7649E
5989-0475EN
marking code C4 Sot 23-5
sc70-3 PCB PAD
Marking Code ABC
marking code 54
marking code tc sot 363
AN1124
agilent marking code
8C marking code
part marking ab sc-70
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SHBB
Abstract: CAPACITOR TANTALUM 10uf 16v VISHAY MAKE how to work 16v zener diode zener diode with 5.1v 500ma Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference national semi books SHAB MARKING SCHOTTKY DIODES CROSS REFERENCE
Text: LM2736 LM2736 Thin SOT23 750mA Load Step-Down DC-DC Regulator Literature Number: SNVS316E LM2736 Thin SOT23 750mA Load Step-Down DC-DC Regulator General Description Features The LM2736 regulator is a monolithic, high frequency, PWM step-down DC/DC converter in a 6-pin Thin SOT23 package.
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LM2736
LM2736
750mA
SNVS316E
SHBB
CAPACITOR TANTALUM 10uf 16v VISHAY MAKE
how to work 16v zener diode
zener diode with 5.1v 500ma
Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference
national semi books
SHAB MARKING
SCHOTTKY DIODES CROSS REFERENCE
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Untitled
Abstract: No abstract text available
Text: PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,
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PMEG2005CT
O-236AB)
AEC-Q101
771-PMEG2005CT215
PMEG2005CT
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MUC10A
Abstract: CDRHD5D28RHPNP
Text: LM27341,LM27342 LM27341/LM27342/LM27341Q/LM27342Q 2 MHz 1.5A/2A Wide Input Range Step-Down DC-DC Regulator with Frequency Synchronization Literature Number: SNVS497D February 9, 2010 2 MHz 1.5A/2A Wide Input Range Step-Down DC-DC Regulator with Frequency Synchronization
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LM27341
LM27342
LM27341/LM27342/LM27341Q/LM27342Q
SNVS497D
LM27341/LM27342/
LM27341Q/LM27342Q
LM27342
10-pin
MUC10A
CDRHD5D28RHPNP
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VS-15MQ040N
Abstract: V3f marking code vs-15mq040npbf VS-15MQ040 vishay v3f 15MQ04
Text: VS-15MQ040NPbF Vishay High Power Products Schottky Rectifier, 3 A FEATURES Cathode • • • • Surface mountable Extremely low forward voltage Compact size Improved reverse blocking voltage capability relative to other similar size Schottky • Meets MSL level 1, per J-STD-020, LF maximum peak of
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VS-15MQ040NPbF
J-STD-020,
2002/95/EC
VS-15MQ040NPbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VS-15MQ040N
V3f marking code
VS-15MQ040
vishay v3f
15MQ04
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Untitled
Abstract: No abstract text available
Text: TST30H150CW thru TST30H200CW Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and
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TST30H150CW
TST30H200CW
2011/65/EU
2002/96/EC
O-220AB
D1407037
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Untitled
Abstract: No abstract text available
Text: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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TSPB15U50S
J-STD-020
2011/65/EU
2002/96/EC
D1408064
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