onsemi 035 Schottky diode
Abstract: diode Marking code t5
Text: NTGD3147F Power MOSFET and Schottky Diode −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Features • • • • • • Fast Switching Low Gate Change Low RDS on Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility
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NTGD3147F
NTGD3147F/D
onsemi 035 Schottky diode
diode Marking code t5
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NTGD4169FT1G
Abstract: diode Marking code t5 5M MARKING CODE SCHOTTKY DIODE NTGD4169F
Text: NTGD4169F Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6 Features • • • • • • Fast Switching Low Gate Change Low RDS on Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility
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NTGD4169F
NTGD4169F/D
NTGD4169FT1G
diode Marking code t5
5M MARKING CODE SCHOTTKY DIODE
NTGD4169F
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"MARKING CODE CA"
Abstract: very high current schottky diode 33mm2 schottky diode
Text: Central CTLSH05-4M521 TM Semiconductor Corp. SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH05-4M521 Low VF Schottky Diode is a high quality Schottky Diode designed for applications where small size and operational effciency are the prime
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CTLSH05-4M521
OT-563)
TLM521
100mA
500mA
33mm2
17-January
"MARKING CODE CA"
very high current schottky diode
33mm2
schottky diode
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very high current schottky diode
Abstract: CTLSH05-40M621 TLM621 DC surface mount power diode marking code 18 surface mount diode marking r2 diode schottky diode
Text: Central CTLSH05-40M621 TM Semiconductor Corp. SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE Top View DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH05-40M621 Low VF Schottky Diode packaged in a TLM Tiny Leadless Module™ , is a high quality Schottky Diode
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CTLSH05-40M621
OT-563)
TLM621
100mA
500mA
18-January
very high current schottky diode
CTLSH05-40M621
DC surface mount power diode
marking code 18 surface mount diode
marking r2 diode
schottky diode
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Untitled
Abstract: No abstract text available
Text: NTGD3147F Power MOSFET and Schottky Diode −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Features • • • • • • http://onsemi.com Fast Switching Low Gate Change Low RDS on Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility
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NTGD3147F
NTGD3147F/D
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NTGD4169F
Abstract: No abstract text available
Text: NTGD4169F Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6 Features • • • • • • http://onsemi.com Fast Switching Low Gate Change Low RDS on Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility
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NTGD4169F
NTGD4169F/D
NTGD4169F
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Untitled
Abstract: No abstract text available
Text: DSA300I100NA preliminary Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Backside: Isolated 2 1 3 4 Features / Advantages: Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour
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DSA300I100NA
OT-227B
60747and
20120907a
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Untitled
Abstract: No abstract text available
Text: DSA300I200NA preliminary Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Backside: Isolated 2 1 3 4 Features / Advantages: Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour
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DSA300I200NA
OT-227B
60747and
20120907a
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Untitled
Abstract: No abstract text available
Text: DSA300I45NA preliminary Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Backside: Isolated 2 1 3 4 Features / Advantages: Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour
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DSA300I45NA
OT-227B
60747and
20120907a
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"MARKING CODE CA"
Abstract: marking code ca MARKING CODE C.A very high current schottky diode marking CA Schottky Diode CTLSH05-4M521 10V Schottky Diode
Text: Central CTLSH05-4M521 TM Semiconductor Corp. SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE Top View Bottom View DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH05-4M521 Low VF Schottky Diode is a high quality Schottky Diode designed for applications where small size and operational effciency are the prime
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CTLSH05-4M521
CTLSH05-4M521
OT-563)
TLM521
100mA
500mA
33mm2
27-April
"MARKING CODE CA"
marking code ca
MARKING CODE C.A
very high current schottky diode
marking CA
Schottky Diode
10V Schottky Diode
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marking 27.A
Abstract: NTLGF3402PT1G NTLGF3402PT2G QT020 NTLGF3402P
Text: NTLGF3402P Power MOSFET and Schottky Diode −20 V, −3.9 A FETKY , P−Channel, 2.0 A Schottky Barrier Diode, DFN6 http://onsemi.com Features • • • • • MOSFET Flat Lead 6 Terminal Package 3x3x1 mm Enhanced Thermal Characteristics Low VF and Low Leakage Schottky Diode
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NTLGF3402P
NTLGF3402P/D
marking 27.A
NTLGF3402PT1G
NTLGF3402PT2G
QT020
NTLGF3402P
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L05 diode
Abstract: ZLLS500 MARKING L05 ZHCS500 ZLLS500TA ZLLS500TC
Text: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS500
ZLLS500
L05 diode
MARKING L05
ZHCS500
ZLLS500TA
ZLLS500TC
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L05 diode
Abstract: ZLLS500 ZHCS500 ZLLS500TA ZLLS500TC 8-NP
Text: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS500
ZLLS500
L05 diode
ZHCS500
ZLLS500TA
ZLLS500TC
8-NP
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ZHCS1000
Abstract: ZLLS1000 ZLLS1000TA ZLLS1000TC
Text: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS1000
ZHCS1000
ZLLS1000
ZLLS1000TA
ZLLS1000TC
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ZLLS1000
Abstract: Diode 20A/30v ZHCS1000 ZLLS1000TA ZLLS1000TC
Text: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS1000
ZLLS1000
Diode 20A/30v
ZHCS1000
ZLLS1000TA
ZLLS1000TC
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Untitled
Abstract: No abstract text available
Text: 4V Drive Nch+SBD MOSFET ES6U3 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions Unit : mm WEMT6 Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Built-in Low VF schottky barrier diode.
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R0039A
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Untitled
Abstract: No abstract text available
Text: 4V Drive Nch+SBD MOSFET ES6U3 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Schottky barrier diode WEMT6 zFeatures 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Built-in Low VF schottky barrier diode.
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R0039A
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ZLLS400
Abstract: ZHCS400 ZLLS400TA ZLLS400TC Schottky Diode 40V 1A
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10mA DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
ZLLS400
ZHCS400
ZLLS400TA
ZLLS400TC
Schottky Diode 40V 1A
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L05 diode
Abstract: ZHCS500 ZLLS500 ZLLS500TA ZLLS500TC
Text: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low forward
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ZLLS500
ZLLS500
L05 diode
ZHCS500
ZLLS500TA
ZLLS500TC
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ZLLS400
Abstract: ZLLS400TA ZHCS400 ZLLS400TC
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
OD323
swit26100
ZLLS400
ZLLS400TA
ZHCS400
ZLLS400TC
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Untitled
Abstract: No abstract text available
Text: DSS6-015AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 150 V 6A 0.62 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values
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DSS6-015AS
O-252
6-015AS
60747and
20110915a
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Untitled
Abstract: No abstract text available
Text: DSS6-0045AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 6A 0.50 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values
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DSS6-0045AS
O-252
6-0045AS
60747and
20110915a
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Untitled
Abstract: No abstract text available
Text: DSS17-06CR V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 600 V 17 A 2.71 V Part number 3 1 Backside: isolated Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values
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DSS17-06CR
ISOPLUS247
60747and
20110201a
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ZLLS400
Abstract: IR610 ZHCS400 ZLLS400TA ZLLS400TC
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
ZLLS400
IR610
ZHCS400
ZLLS400TA
ZLLS400TC
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