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    SCHOTTKY DIODE MACOM SPICE MODEL CJPAR Search Results

    SCHOTTKY DIODE MACOM SPICE MODEL CJPAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY DIODE MACOM SPICE MODEL CJPAR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    65rj

    Abstract: No abstract text available
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


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    MA4E2502 65rj PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


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    MA4E2502 PDF

    schottky diode MACOM SPICE model

    Abstract: schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


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    MA4E2502 schottky diode MACOM SPICE model schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family PDF

    MA4E2502

    Abstract: MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer
    Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required


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    MA4E2508 MA4E2502 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer PDF

    schottky diode MACOM SPICE model Cjpar

    Abstract: MACOM Schottky Diode
    Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required


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    MA4E2508 schottky diode MACOM SPICE model Cjpar MACOM Schottky Diode PDF

    low barrier schottky

    Abstract: MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom
    Text: MA4E2532L-1113, MA4E2532M-1113 SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series Features M/A-COM Products Rev. V3 Case Style 1113 • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwave Circuits, No


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    MA4E2532L-1113, MA4E2532M-1113 MA4E2532-1113 low barrier schottky MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom PDF

    schottky diode MACOM SPICE model Cjpar

    Abstract: No abstract text available
    Text: MA4E2532L-1113, MA4E2532M-1113 SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series Features M/A-COM Products Rev. V3 Case Style 1113 • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwave Circuits, No


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    MA4E2532L-1113, MA4E2532M-1113 MA4E2532-1113 schottky diode MACOM SPICE model Cjpar PDF

    500 platinum Hot wire

    Abstract: MA4E2513L-1289 MA4E2513L-1289W MACOM Schottky Diode
    Text: MA4E2513L-1289 SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Extremely Small “0301” 1000 x 300 um Footprint • Surface Mountable in Microwave Circuits, No Wire•


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    MA4E2513L-1289 MA4E2513L-1289 500 platinum Hot wire MA4E2513L-1289W MACOM Schottky Diode PDF