CD731
Abstract: marking 6l "SMD PACKAGE" smd diode So SMD PACKAGE INDIA
Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE CD731 SOT23 - 6L Formed SMD Package MARKING CD731 = C3S dot on pin 1 Schottky Barrier Diode (set of three) ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) - specification per diode
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Original
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CD731
C-120
CD731Rev
130804E
CD731
marking 6l
"SMD PACKAGE"
smd diode So
SMD PACKAGE
INDIA
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PDF
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VPS05178
Abstract: marking a4 SOT-143 a3 sot143 marking s8s 4C3 diode
Text: BAT 14-099R Silicon Crossover Ring Quad Schottky Diode 3 • Medium barrier diode for double balanced mixer, phase detectors and modulators 4 2 1 4 VPS05178 3 1 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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Original
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14-099R
VPS05178
EHA07012
OT-143
EHD07089
EHD07090
Oct-07-1999
VPS05178
marking a4 SOT-143
a3 sot143
marking s8s
4C3 diode
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PDF
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A4 marking diode
Abstract: VPS05178 sot-143 s6s diode marking a4 4C3 diode 15-099R
Text: BAT 15-099R Silicon Crossover Ring Quad Schottky Diode 3 • Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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Original
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15-099R
VPS05178
EHA07012
OT-143
EHD07077
EHD07078
Oct-07-1999
A4 marking diode
VPS05178
sot-143 s6s
diode marking a4
4C3 diode
15-099R
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PDF
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4C3 diode
Abstract: Schottky Diode Marking C3 A4 marking diode VPS05178 BAT15-099R diode marking a4 diode MARKING A3
Text: BAT15-099R Silicon Crossover Ring Quad Schottky Diode 3 Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099R
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Original
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BAT15-099R
VPS05178
EHA07012
OT143
EHD07077
15-099R
Jul-31-2001
4C3 diode
Schottky Diode Marking C3
A4 marking diode
VPS05178
BAT15-099R
diode marking a4
diode MARKING A3
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PDF
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BAT62-08S
Abstract: VPS05604
Text: BAT62-08S Silicon Schottky Diode Array Preliminary data 4 Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604
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Original
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BAT62-08S
OT-363
VPS05604
EHA07193
EHA07291
OT363
EHD07061
900MHz
EHD07063
BAT62-08S
VPS05604
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PDF
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marking code 62 3 pin diode
Abstract: No abstract text available
Text: BAT 62-08S Silicon Schottky Diode Array Preliminary data 4 • Low barrier diode for detectors up to GHz 5 6 frequencies Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 2 1 3
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Original
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62-08S
OT-363
VPS05604
EHA07193
EHA07291
62-08S
Q62702-A1343
OT-363
D07060
EHD07061
marking code 62 3 pin diode
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PDF
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SCHOTTKY DIODE SOT-143
Abstract: diode marking 74 schottky marking code PD
Text: Central Sem iconductor Corp. DESCRIPTION The CENTRAL SEMICONDUCTOR CMFSH-3i type is a Silicon Dual Isolated Schottky diode designed for surface mount fast switching appIications requ iring a low forward vo Itage drop. Marking Code is C3l. MAXIMUM RATINGS TA=25°C
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OCR Scan
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OT-143
100mA
350SYMBOL
SCHOTTKY DIODE SOT-143
diode marking 74
schottky marking code PD
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PDF
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Marking w1s sot
Abstract: VPS05604 Device Marking A3 top marking c3 MARKING w1s sot363
Text: BAS 70-08S Silicon Schottky Diode Array General-purpose diode for high-speed switching 4 Circuit protection 5 6 Voltage clamping High-level detecting and mixing Tape loading orientation 2 Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device
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Original
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70-08S
OT-363
VPS05604
EHA07193
EHA07291
OT-363
EHB00042
EHB00043
EHB00044
Marking w1s sot
VPS05604
Device Marking A3
top marking c3
MARKING w1s sot363
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PDF
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a-316
Abstract: code diode transient ERA82-004 CV marking code diode transient A316 a316 j
Text: ERA82-004 o.6A i Outline Drawings SCHOTTKY BARRIER DIODE I Features • 1&VF IS t]\ : Marking Low VF *3 7 Super high speed sw itchin g. • - a —K : C3 Color code •W h ite fI*H4 tEflE? 5 * Voltage class High reliability by planer design. • ffi'J ' & O f t
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OCR Scan
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ERA82-004
a-316
code diode transient
CV marking code diode transient
A316
a316 j
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 • For mixer applications in the VHF / UHF range 5 • For high-speed switching applications 6 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device
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Original
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68-08S
OT-363
VPS05604
EHA07193
EHA07291
68-08S
Q62702-A1344
OT-363
EHD07102
EHD07103
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PDF
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CV marking code diode transient
Abstract: ERA82-004 a316 j
Text: ERA82-004 o.6A i Outline Drawings SCHOTTKY BARRIER DIODE I Features • 1&VF I S t]\ : Marking Low VF *3 7 Super high speed sw itchin g. • - a —K : C3 Color code •W h ite fI*H4 tEflE? 5 * Voltage class High reliability by planer design. • ffi'J ' & O f t
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OCR Scan
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ERA82-004
CV marking code diode transient
a316 j
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PDF
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VPS05604
Abstract: CC140 marking 68 Marking w1s sot 1c36 sot-36
Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 • For mixer applications in the VHF / UHF range 5 6 • For high-speed switching applications Tape loading orientation Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device
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Original
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68-08S
OT-363
VPS05604
EHA07193
EHA07291
OT-363
EHD07102
EHD07103
Oct-07-1999
VPS05604
CC140
marking 68
Marking w1s sot
1c36
sot-36
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 For mixer applications in the VHF / UHF range 5 6 For high-speed switching applications Tape loading orientation Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device
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Original
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68-08S
OT-363
VPS05604
EHA07193
EHA07291
OT-363
EHD07102
EHD07103
Oct-07-1999
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT68-08S 4 Silicon Schottky Diode Array 5 6 For mixer application in the VHF/UHF range For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device
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Original
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BAT68-08S
VPS05604
OT-363
EHA07193
EHA07291
OT363
EHD07102
Jan-28-2002
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PDF
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smd diode L43
Abstract: smd diode L44 l44 smd marking code smd diode code l4 smd diode L42 DIODE marking L4 marking L44 SOT23 L43 SMD SMD DIODE L4 L43 DIODE
Text: Spec. No. : C302N3-H Issued Date : 2003.04.14 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-23 small plastic SMD package.
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Original
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C302N3-H
BAT54N3/BAT54AN3
BAT54CN3/BAT54SN3
OT-23
BAT54
BAT54A
BAT54C
OT-23
BAT54S
UL94V-0
smd diode L43
smd diode L44
l44 smd marking code
smd diode code l4
smd diode L42
DIODE marking L4
marking L44 SOT23
L43 SMD
SMD DIODE L4
L43 DIODE
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PDF
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SMD LD3
Abstract: marking code LD3 DIODE SMD MARKING 5C JV3 diode A2 DIODE SMD CODE MARKING smd diode marking code jv3 SMD jv3 marking code a2 SMD diode jv3 Marking smd diode marking code a2
Text: Spec. No. : C302N3-L Issued Date : 2003.04.14 Revised Date : 2005.11.08 Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-23 small plastic SMD package.
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Original
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C302N3-L
BAT54N3/BAT54AN3
BAT54CN3/BAT54SN3
OT-23
BAT54
BAT54A
BAT54C
OT-23
BAT54S
UL94V-0
SMD LD3
marking code LD3
DIODE SMD MARKING 5C
JV3 diode
A2 DIODE SMD CODE MARKING
smd diode marking code jv3
SMD jv3
marking code a2 SMD diode
jv3 Marking
smd diode marking code a2
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PDF
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A2 DIODE SMD CODE MARKING
Abstract: smd diode marking code a2 S3 marking DIODE smd diode code s3 A2 SMD CODE MARKING marking code e1 smd smd diode code l4 marking K2 diode smd schottky diode s3 - 13 DIODE smd marking A1
Text: Spec. No. : C302S3-H Issued Date : 2004.04.13 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54S3/BAT54AS3 BAT54CS3/BAT54SS3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-323 very small plastic SMD package.
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Original
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C302S3-H
BAT54S3/BAT54AS3
BAT54CS3/BAT54SS3
OT-323
BAT54
BAT54A
BAT54C
OT-323
BAT54S
UL94V-0
A2 DIODE SMD CODE MARKING
smd diode marking code a2
S3 marking DIODE
smd diode code s3
A2 SMD CODE MARKING
marking code e1 smd
smd diode code l4
marking K2 diode
smd schottky diode s3 - 13
DIODE smd marking A1
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PDF
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Untitled
Abstract: No abstract text available
Text: C3D06065E VRRM = 650650 VRRM V V Silicon Carbide Schottky Diode IF ITF;C=135˚C = 9.5 TC<135˚C 8.6AA Z-Rec Rectifier Qc Qc = 15 nC = nC Features • • • • • • • Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage
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Original
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C3D06065E
650-Volt
O-252-2
C3D06065E
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PDF
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Untitled
Abstract: No abstract text available
Text: C3D08065E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 12 A Z-Rec Rectifier Qc Features • • • • • • • 650 V = 20 nC Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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Original
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C3D08065E
650-Volt
O-252-2
C3D08065E
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PDF
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C3D04060E
Abstract: CREE C3D04060
Text: C3D04060E–Silicon Carbide Schottky Diode Z-REC RECTIFIER VRRM = 600 V IF =4A TC < 160 °C Qc Features • • • • • • • • = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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Original
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C3D04060E
600-Volt
O-252-2
C3D04060E
C3D04060
CREE C3D04060
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PDF
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C3D10065I
Abstract: No abstract text available
Text: C3D10065I Silicon Carbide Schottky Diode Z-Rec Rectifier IF; 10 A TC<125˚C= = 25 nC Package 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior
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Original
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C3D10065I
650-Volt
O-220-2
C3D10065I
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PDF
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Untitled
Abstract: No abstract text available
Text: C3D10065I VRRM = Silicon Carbide Schottky Diode IF TC=125˚C = 10 A Z-Rec Rectifier Qc Features • • • • • • = 25 nC Package 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation
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Original
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C3D10065I
650-Volt
C3D10065I
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PDF
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Untitled
Abstract: No abstract text available
Text: C3D08065I VRRM = Silicon Carbide Schottky Diode IF TC=125˚C = 8 A Z-Rec Rectifier Qc Features • • • • • • 650 V = 21 nC Package 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation
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Original
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C3D08065I
650-Volt
C3D08065I
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PDF
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C3D04060A
Abstract: CREE C3D04060 c3d04060
Text: C3D04060A–Silicon Carbide Schottky Diode VRRM Z-REC RECTIFIER IF AVG = 4 A = 600 V (TC < 160°C) Qc Features • • • • • • • • = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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Original
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C3D04060A
600-Volt
O-220-2
C3D04060A
C3D04060
CREE C3D04060
c3d04060
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PDF
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