Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
STPSC6H065D
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
STPSC10H065D
STPSC10H065G-TR
DocID023604
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PDF
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
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PDF
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Untitled
Abstract: No abstract text available
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC8H065
O-220AC
O-220AC
STPSC8H065D
STPSC8H065DI
STPSC8H065B-TR
STPSC8H065G-TR
DocID023603
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PDF
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Untitled
Abstract: No abstract text available
Text: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065-Y
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Marking Code 72
Abstract: smd schottky diode marking 72 B 817 marking code 203 sot323 package
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D102 1PS70SB20 Schottky barrier diode Product specification 2001 Mar 16 Philips Semiconductors Product specification Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection
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M3D102
1PS70SB20
OT323
SC-70)
MAM394
613514/01/pp8
Marking Code 72
smd schottky diode marking 72
B 817
marking code 203 sot323 package
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PDF
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BAS270
Abstract: BP317 BAS27
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS270 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS270 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.
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M3D154
BAS270
MAM214
OD110)
613514/01/pp8
BAS270
BP317
BAS27
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1PS59SB20
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection
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M3D114
1PS59SB20
SC-59
MLC357
MSA314
SCA60
115104/00/01/pp8
1PS59SB20
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SOD80C
Abstract: M3D121 BAS85 smd diode marking Av 100H01 smd diode package sod80 PHILIPS DIODE SOD80 marking 37 schottky SMD 157 diode diode smd marking V
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D121 BAS85 Schottky barrier diode Product specification Philips Semiconductors Product specification Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an
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M3D121
BAS85
OD80C
OD80C
100H01
SOD80C
M3D121
BAS85
smd diode marking Av
100H01
smd diode package sod80
PHILIPS DIODE SOD80
marking 37 schottky
SMD 157 diode
diode smd marking V
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BAS70L
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
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M3D891
BAS70L
OD882
MDB391
SCA75
613514/01/pp8
BAS70L
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BAS40L
Abstract: marking code s6 SOD-882L
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
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M3D891
BAS40L
OD882
MDB391
SCA75
613514/01/pp8
BAS40L
marking code s6
SOD-882L
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sk0032
Abstract: No abstract text available
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0032 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0032 Type：SB120T 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0032
TypeSB120T
size32mils
32mils0
thickness12
038mm
area24
padAnode28mils
28mils0
sk0032
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Schottky Diode 40V 2A
Abstract: "Schottky Diode"
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0045A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0045A Type：SB240 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0045A
TypeSB240
size45mils
45mils1
thickness12
038mm
area36
padAnode40
characteristicsTa25
Schottky Diode 40V 2A
"Schottky Diode"
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SK-0028A
Abstract: Schottky diode Die IR SK-002 1n5819 die schottky diode
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0028A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0028A Type：1N5819 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0028A
Type1N5819
size28mils
28mils0
thickness12
038mm
area20
padAnode24mils
24mils0
SK-0028A
Schottky diode Die IR
SK-002
1n5819 die
schottky diode
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"Schottky Diode"
Abstract: 1N5822 data sheet
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0055A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0055A Type：1N5822 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0055A
Type1N5822
size55mils
55mils1
thickness12
038mm
area44
padAnode48
characteristicsTa25
"Schottky Diode"
1N5822 data sheet
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schottky diode
Abstract: No abstract text available
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0060A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0060A Type：SB340 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0060A
TypeSB340
size60mils
60mils1
thickness12
038mm
area48mils
48mils1
padAnode54
schottky diode
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Untitled
Abstract: No abstract text available
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0032A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0032A Type：SB140T 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0032A
TypeSB140T
size32mils
32mils0
thickness12
038mm
area24
padAnode28mils
28mils0
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SAS diode
Abstract: high frequency diode BES100 "high frequency Diode"
Text: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications Description a - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN
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BES100
DSBES1008120
SAS diode
high frequency diode
BES100
"high frequency Diode"
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product spscMcation Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is • High breakdown voltage
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BAS85
MRA540
MGC681
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PDF
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ZLLS400
Abstract: IR610 ZHCS400 ZLLS400TA ZLLS400TC
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
ZLLS400
IR610
ZHCS400
ZLLS400TA
ZLLS400TC
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D06S60
Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
Text: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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SDB06S60
Q67040-S4370
D06S60
D06S60
Q67040-S4370
P-TO263-3-2
T-1228
SDB06S60
SDP06S60
smd schottky diode marking 6a
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Schottky diode TO220
Abstract: SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647
Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery
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SDT08S60
P-TO220-2-2.
D08S60
Q67040S4647
Schottky diode TO220
SDT08S60
6260 thermal
infineon 6260
Single Schottky diode TO-220
Q67040S4647
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