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ROHM Semiconductor SCS112AGC DIODE SIL CARB 600V 12A TO220AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SCS112AGC	Tube			1,000	1 - 10 - 100 - 1000 $5.8625 10000 $5.8625	Buy Now
TME	SCS112AGC				1	1 $10.74 10 $8.53 100 $7.67 1000 $7.67 10000 $7.67	Get Quote
ROHM Semiconductor SCS112AG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SCS112AG		19			1 $13.572 10 $12.064 100 $12.064 1000 $12.064 10000 $12.064	Buy Now

SCS112AG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SCS112AGC		ROHM	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 600V 12A TO220AC		Original	PDF

SCS112AG Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
marking 78w Abstract: No abstract text available Text: TYPE PRODUCTS TO-220AC 2L PAGE SCS112AG 1.TYPE SCS112AG 2.STRUCTURE SILICON CARBIDE EPITAXIAL PLANER SCHOTTKY BARRIER DIODE 3.APPLICATIONS GENERAL RECTIFICATION 4.ABSOLUTE MAXIMUM RATINGS 1/3 [Tj =25oC unless otherwise specified] REVERSE VOLTAGE REPETITIVE PEAK	Original	PDF	O-220AC SCS112AG SCS112AG 125oC, 150oC 55150oC marking 78w
Untitled Abstract: No abstract text available Text: SCS112AG SiC Schottky Barrier Diode SCS112AG Dimensions Unit : mm Applications Switching power supply Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type	Original	PDF	SCS112AG O-220AC R1120A
Untitled Abstract: No abstract text available Text: SiC Schottky Barrier Diode SCS112AG Applications Switching power supply Dimensions Unit : mm Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type	Original	PDF	SCS112AG O-220AC R1120A
Untitled Abstract: No abstract text available Text: SiC Schottky Barrier Diode SCS112AG Dimensions Unit : mm Applications Switching power supply Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type	Original	PDF	SCS112AG O-220AC R1120A
SCS112AG Abstract: No abstract text available Text: SiC Schottky Barrier Diode SCS112AG Dimensions Unit : mm Applications Switching power supply Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type	Original	PDF	SCS112AG O-220AC R1120A SCS112AG
Untitled Abstract: No abstract text available Text: SiC Schottky Barrier Diode SCS112AG Applications Switching power supply Dimensions Unit : mm Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type	Original	PDF	SCS112AG O-220AC R1120A
SCS120AGC Abstract: SCS110AGC SCS108AGC SCS112AGC CNA110004 600 V power Schottky silicon carbide diode silicon carbide Switching Characteristics of Fast Recovery Diodes ultra low forward voltage schottky diode ROHM Product Guide Product Catalog Text: Innovations Embedded Silicon Carbide Schottky Barrier Diodes Selection Guide ROHM MarketingUSA Presented by ROHM Semiconductor Silicon Carbide Schottky Barrier Diodes from ROHM Semiconductor Choosing Silicon Carbide Instead of Silicon Schottky barrier diodes SBDs have	Original	PDF	CNA110004 SCS120AGC SCS110AGC SCS108AGC SCS112AGC 600 V power Schottky silicon carbide diode silicon carbide Switching Characteristics of Fast Recovery Diodes ultra low forward voltage schottky diode ROHM Product Guide Product Catalog