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    Part ECAD Model Manufacturer Description Download Buy
    Q4470- Coilcraft Inc OBSOLETE. See Q4470-CLD or contact us to special order. Visit Coilcraft Inc
    Q447 Coilcraft Inc OBSOLETE. See Q4470-CLD or contact us to special order. Visit Coilcraft Inc
    DO5022P-154 B Coilcraft Inc OBSOLETE See web site for new part number. Part was always RoHS compliant; terminals never contained lead. Visit Coilcraft Inc Buy
    DO1608C-222 C Coilcraft Inc OBSOLETE See web site for new part number. Part was always RoHS compliant; terminals never contained lead. Visit Coilcraft Inc Buy
    DO3316P-155 Coilcraft Inc OBSOLETE See web site for new part number. Part was always RoHS compliant; terminals never contained lead. Visit Coilcraft Inc Buy

    SEE TECH Datasheets Context Search

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    BS170 MOTOROLA

    Abstract: MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


    Original     		MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* BS170 MOTOROLA MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006 PDF

    EQUIVALENT FOR mjf18004

    Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


    Original     		MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91839A REPETITIVE AVALANCHE AND dv/dt RATED IRHNA57260SE MOSFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.043Ω International Rectifier’s (SEE) RAD HARD technology MOSFETs demonstrate immunity to SEE failure.


    Original     		1839A IRHNA57260SE 200Volt, PDF

    8a 905 surface mount transistor

    Abstract: IRHNB7460SE n-Channel mosfet 400v
    Text: PD - 91741 REPETITIVE AVALANCHE AND dv/dt RATED IRHNB7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure.


    Original     		IRHNB7460SE 500Volt, 8a 905 surface mount transistor IRHNB7460SE n-Channel mosfet 400v PDF

    IRHNA7360SE

    Abstract: No abstract text available
    Text: PD - 91398 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA7360SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure.


    Original     		IRHNA7360SE 400Volt, IRHNA7360SE PDF

    IRHNA7460SE

    Abstract: No abstract text available
    Text: PD - 91399 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure.


    Original     		IRHNA7460SE 500Volt, IRHNA7460SE PDF

    pcb 200W audio amplifier

    Abstract: IRHNB7264SE
    Text: PD-91738 IRHNB7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 250Volt, 0.11W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. No


    Original     		PD-91738 IRHNB7264SE 250Volt, pcb 200W audio amplifier IRHNB7264SE PDF

    IRHNB7360SE

    Abstract: AVALANCHE TRANSISTOR 24-A
    Text: PD - 91740 REPETITIVE AVALANCHE AND dv/dt RATED IRHNB7360SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure.


    Original     		IRHNB7360SE 400Volt, IRHNB7360SE AVALANCHE TRANSISTOR 24-A PDF

    transistor rc 3866

    Abstract: t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state–of–the–art SWITCHMODE bipolar power transistor. It


    Original     		MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJW16212 TIP73B TIP74 TIP74A transistor rc 3866 t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108 PDF

    IRHM7250SE

    Abstract: No abstract text available
    Text: PD-91779 IRHM7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 200Volt, 0.10W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


    Original     		PD-91779 IRHM7250SE 200Volt, Rectifi10) IRHM7250SE PDF

    IRHI7460SE

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED IRHI7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500 Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE


    Original     		IRHI7460SE IRHI7460SE PDF

    IRHNA7264SE

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1432 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET IRHNA7264SE TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 250Volt, 0.110Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure.


    Original     		IRHNA7264SE 250Volt, IRHNA7264SE PDF

    IRH7250SE

    Abstract: TC Bias
    Text: PD - 91778 IRH7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 200Volt, 0.10W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


    Original     		IRH7250SE 200Volt, Rectif10) IRH7250SE TC Bias PDF

    IRHN7450SE

    Abstract: No abstract text available
    Text: PD - 91313B IRHN7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


    Original     		91313B IRHN7450SE 500Volt, Rectifi10) IRHN7450SE PDF

    IRH7450SE

    Abstract: No abstract text available
    Text: PD - 91390A IRH7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


    Original     		1390A IRH7450SE 500Volt, Rectifie10) IRH7450SE PDF

    IRHM2C50SE

    Abstract: IRHM7C50SE
    Text: PD - 91252A IRHM2C50SE IRHM7C50SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 600Volt, 0.6Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


    Original     		1252A IRHM2C50SE IRHM7C50SE 600Volt, Internat10) IRHM2C50SE IRHM7C50SE PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-91779 IRHM7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.10Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


    Original     		PD-91779 IRHM7250SE 200Volt, PDF

    IRHN7250SE

    Abstract: mosfet 400a 200V
    Text: PD - 91780A IRHN7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.10Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


    Original     		1780A IRHN7250SE 200Volt, Rectifi10) IRHN7250SE mosfet 400a 200V PDF

    IRHM7460SE

    Abstract: No abstract text available
    Text: PD - 91394D IRHM7460SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test


    Original     		91394D IRHM7460SE 500Volt, IRHM7460SE PDF

    IRHM7360SE

    Abstract: No abstract text available
    Text: PD - 91224C IRHM7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test


    Original     		91224C IRHM7360SE 400Volt, IRHM7360SE PDF

    IRHM7450SE

    Abstract: aval
    Text: PD - 91223C IRHM7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


    Original     		91223C IRHM7450SE 500Volt, Rectifi10) IRHM7450SE aval PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91252A IRHM2C50SE IRHM7C50SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 600Volt, 0.6Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


    Original     		1252A IRHM2C50SE IRHM7C50SE 600Volt, utiliz310) PDF

    IRHM7264SE

    Abstract: No abstract text available
    Text: PD - 91393D IRHM7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 250Volt, 0.11Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test


    Original     		91393D IRHM7264SE 250Volt, IRHM7264SE PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


    OCR Scan     		MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212 PDF