ae29F2008
Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Text: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.
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Original
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GLV32
Am27C010
Am27C020
Am27C128
Am27C512
Am27C64
Am27H256
Am27LV010
Am27LV010B
Am27LV020
ae29F2008
ATMEL eeprom 2816A
rom AE29f2008
HN462732G
D27C64
AT27C64
ASD AE29F2008
d27C128
Toshiba tmm24128
HN2764
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eeprom 2816
Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
Text: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel
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OCR Scan
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2864B
AT28HC16
AT28C64
AT28C64E
AT28C64X
AT28HC64
AT28PC64
AT28C64F
AT28C2S6
AT28C256F
eeprom 2816
2816A eeprom
Atmel eeprom Cross Reference
eeprom Cross Reference
EEPROM 2864 INTEL
28C64 EEPROM
xicor 28C64
Xicor 28C010
Xicor 2864
intel 2864
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2816A
Abstract: No abstract text available
Text: 38C16 38C32 High Speed CMOS Electrically Erasable PROM October 1989 Features • H igh Speed: • 35 n s M axim um A ccess Time P ow er Up/Down Protection Circuitry ■ C M OS Technology ■ Low P ower: • 350 m W JE D E C A pp ro ved B yte W ide P inout
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OCR Scan
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PDF
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38C16
38C32
s38C16/32are
36C32
MD400029/C
2816A
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Untitled
Abstract: No abstract text available
Text: E/M36C16 EM36C32 High Speed CMOS Electrically Erasable PROM October 1989 Description Features • SEEO's E/M36C16/32 are high speed 2Kx 8/4Kx 8 Elec trically Erasable Programmable Read Only Memories, manufactured using SEEQ's advanced 1.25 micron CMOS process.
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OCR Scan
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PDF
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E/M36C16
EM36C32
E/M36C16/32
36C16/32
MD400028/C
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Untitled
Abstract: No abstract text available
Text: E/M36C16 EM36C32 High Speed CMOS Electrically Erasable PROM October 1989 Features Description • SEEO's E/M36C16/32 are high speed 2K x 8/4K x 8 Elec trically Erasable Programmable Read Only Memories, manufactured using SEEQ's advanced 1.25 micron CMOS process.
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OCR Scan
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PDF
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E/M36C16
EM36C32
E/M36C16/32
36C16/32
3GC16/32
MD400028/C
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2BC64
Abstract: 2816A 28C64 eeprom 2816A Seeq Technology 36C32 seeq 38c16 seeq prom 38C16
Text: High Speed CMOS Electrically Erasable PROM O ctober 1989 Features • High Speed: • 3 5 n s M axim um A ccess Time P ow er Up/Down P rotection C ircuitry ■ C M O S Technology ■ L o w P ower: • 350 m W JE D E C A pp ro ved B yte Wide P inout • 38C 1 6:2 816 A Pin Com patible
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OCR Scan
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PDF
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38C16
38C32
38C16
36C16
38C32
MD400029/C
2BC64
2816A
28C64
eeprom 2816A
Seeq Technology
36C32
seeq 38c16
seeq prom
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co12f
Abstract: No abstract text available
Text: ITE D SEE 3 TECHN OLO GY INC • ñinS33 0Q02bûb 1 E/M36C16 E/M36C32 High Speed CMOS Electrically Erasable PROM October 1989 ”T 4 4 - l V 2 - 7 Features Description ■ M ilitary and Extended Temperature Range • -55° C to +125aC Operation (Military
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OCR Scan
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PDF
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inS33
0Q02b
E/M36C16
E/M36C32
125aC
E/M36C16/32
38C16-2K*
36C32-4KX8EEPROM
MD400028/C
co12f
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36C32
Abstract: No abstract text available
Text: 36C16 36C32 High Speed CMOS Electrically Erasable PROM October 1989 Features Description • SEEO's 36C16/32 are high speed 2K x8/4K x 8 Electrically Erasable Programmable Read Only Memories, manufac tured using SEEO's advanced 1.25 micron CMOS proc ess.
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OCR Scan
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PDF
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36C16
36C32
36C16/32
36C32
MD400027/C
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J990
Abstract: E38C32 36C32 eeprom 2816A seeq 2816A
Text: E/M38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ Military and Extended Temperature flange • -5 5 ° C to +125°C Operation Military • - 4 0 ° C to +85°C Operation (Extended) CMOS Technology
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OCR Scan
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PDF
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E/M38C16
E/M38C32
38C16
38C32
28C64
E/M38C5
MD400030/C
J990
E38C32
36C32
eeprom 2816A
seeq 2816A
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E38C32
Abstract: No abstract text available
Text: E/M38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ ■ ■ ■ Military and Extended Temperature Range High Speed Address/Data Latching 50 ms Chip Erase 5V ±10% Power Supply Power Up/Down Protection Circuitry
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OCR Scan
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PDF
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E/M38C16
E/M38C32
3SC16
38C32
28C64
MD400030/C
E38C32
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ATMEL 620
Abstract: AT28C16-20 CAT28C16A-20 28C16-15 28C16-20 28C16-25 AT28C16-15 AT28C16-25 AT28C16-45 AT28C16-55
Text: - 44 - 4-616 X -f € £ it £ CC M a -h/m ^ -h n ft I imtfstiES m TAAC max (ns) TCAC (ns) TOH max (ns) TOE max (ns) TOD max (ns) VDD (V) I DD/STANDBY (mA) VIL max (V) VIH min (V) Ci max (pF) V O L / I VOL max (V/mA) V O H / I VOH min (V/mA) Co max (PF)
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28C16-15
28C16-20
28C16-25
38C16-
CAT28C16AI-20
048X8)
24PIN
ATMEL 620
AT28C16-20
CAT28C16A-20
AT28C16-15
AT28C16-25
AT28C16-45
AT28C16-55
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