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    SELF REFRESH TEMPERATURE Search Results

    SELF REFRESH TEMPERATURE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation

    SELF REFRESH TEMPERATURE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: $67&589.49 3 89#589.ð49#&026#'5$0#+IDVW#SDJH#PRGH, )HDWXUHV • Refresh • Organization: 262,144 words by 16 bits • High speed - 512 refresh cycles, 8 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh - Self-refresh option is available for new generation device


    Original     		PDF AS4C256K16F0-50) 40-pin 40/44-pin I/O15 AS4C256K16F0-50TC AS4C256K16F0-25JC AS4C256K16F0-30JC AS4C256K16F0-35JC

    VG264265

    Abstract: VG264260B
    Text: VG264260BJ 262,144x16-Bit CMOS Dynamic RAM VIS TRUTH TABLE 2-CKE Notes: 1-4 CKEn-1 CKE n CURRENT STATE COMANDn ACTIONn L L Power-Down X Maintain Power-Down Self Refresh X Maintain Self Refresh Power-Down COMMAND INHIBIT or NOP Exit Power-Down 5 Self Refresh


    Original     		PDF VG264260BJ 144x16-Bit edg16 1G5-0157 VG264265 VG264260B

    AS4LC4M4E1-60JC

    Abstract: AS4LC4M4E0-50JC AS4LC4M4E0-50JI AS4LC4M4E0-50TC AS4LC4M4E0-50TI AS4LC4M4E0-60JC AS4LC4M4E0-60JI
    Text: March 2001 AS4LC4M4E0 AS4LC4M4E1 4Mx4 CMOS DRAM EDO Family Features • Refresh - 4096 refresh cycles, 64 ms refresh interval for AS4LC4M4E0 - 2048 refresh cycles, 32 ms refresh interval for AS4LC4M4E1 - RAS-only or CAS-before-RAS refresh or self-refresh


    Original     		PDF 24/26-pin NC/A11 AS4LC4M4E1-60JC AS4LC4M4E0-50JC AS4LC4M4E0-50JI AS4LC4M4E0-50TC AS4LC4M4E0-50TI AS4LC4M4E0-60JC AS4LC4M4E0-60JI

    Untitled

    Abstract: No abstract text available
    Text: February 2001 Advance Information AS4LC4M4E0 AS4LC4M4E1 4Mx4 CMOS DRAM EDO Family Features • Refresh - 4096 refresh cycles, 64 ms refresh interval for AS4LC4M4E0 - 2048 refresh cycles, 32 ms refresh interval for AS4LC4M4E1 - RAS-only or CAS-before-RAS refresh or self-refresh


    Original     		PDF 24/26-pin

    96-ball FBGA

    Abstract: No abstract text available
    Text: 2Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features • • • • • • Self refresh temperature SRT Automatic self refresh (ASR) Write leveling Multipurpose register


    Original     		PDF MT41K256M8 MT41K128M16 09005aef847d068f 96-ball FBGA

    AS4LC4M4E1-60JC

    Abstract: AS4LC4M4E1-50JC AS4LC4M4E1-50JI AS4LC4M4E1-50TC AS4LC4M4E1-50TI AS4LC4M4E1-60JI AS4LC4M4E1-60TC AS4LC4M4E1-60TI
    Text: April 2001 AS4LC4M4E1 4Mx4 CMOS DRAM EDO 3.3V Family Features • Refresh - 2048 refresh cycles, 32 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh • TTL-compatible, three-state I/O • JEDEC standard package - 300 mil, 24/26-pin SOJ


    Original     		PDF 24/26-pin AS4LC4M4E1-60JC AS4LC4M4E1-50JC AS4LC4M4E1-50JI AS4LC4M4E1-50TC AS4LC4M4E1-50TI AS4LC4M4E1-60JI AS4LC4M4E1-60TC AS4LC4M4E1-60TI

    Untitled

    Abstract: No abstract text available
    Text: May 2001 AS4LC4M4E1 4Mx4 CMOS DRAM EDO 3.3V Family Features • Refresh - 2048 refresh cycles, 32 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh • TTL-compatible, three-state I/O • JEDEC standard package - 300 mil, 24/26-pin SOJ


    Original     		PDF 24/26-pin

    A43L3616V-6

    Abstract: A43L3616
    Text: A43L3616 2M X 16 Bit X 4 Banks Synchronous DRAM Features n n n n n Clock Frequency: 166MHz @ CL=3 143MHz @ CL=3 n Burst Read Single-bit Write operation n DQM for masking n Auto & self refresh n 64ms refresh period 4K cycle n 54 Pin TSOP (II) n Low Self Refresh Current version for –V grade


    Original     		PDF A43L3616 166MHz 143MHz A43L3616V-6 A43L3616

    AS4LC4M4F1-50JC

    Abstract: AS4LC4M4F1-50JI AS4LC4M4F1-50TC AS4LC4M4F1-50TI AS4LC4M4F1-60JC AS4LC4M4F1-60JI AS4LC4M4F1-60TC
    Text: May 2001 AS4LC4M4F1 4Mx4 CMOS DRAM Fast Page 3.3V Family Features • Refresh • Organization: 4,194,304 words × 4 bits • High speed - 2048 refresh cycles, 32 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh - 50/60 ns RAS access time


    Original     		PDF 24/26-pin AS4LC4M4F1-50JC AS4LC4M4F1-50JI AS4LC4M4F1-50TC AS4LC4M4F1-50TI AS4LC4M4F1-60JC AS4LC4M4F1-60JI AS4LC4M4F1-60TC

    MT41K512M8RH

    Abstract: 901KB MT41K256M16 MT41K512M8RH-125 256M16 A2 SMD CODE MARKING MT41K512M8RH-125M DDR3L
    Text: 4Gb: x4, x8, x16 DDR3L-RS SDRAM Description 1.35V DDR3L-RS SDRAM MT41K1G4 - 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features • Self refresh temperature SRT • Automatic self refresh (ASR)


    Original     		PDF MT41K1G4 MT41K512M8 MT41K256M16 09005aef8488935b MT41K512M8RH 901KB MT41K256M16 MT41K512M8RH-125 256M16 A2 SMD CODE MARKING MT41K512M8RH-125M DDR3L

    s1866

    Abstract: No abstract text available
    Text: 4Gb: x4, x8, x16 DDR3L-RS SDRAM Description 1.35V DDR3L-RS SDRAM MT41K1G4 - 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features • Self refresh temperature SRT • Automatic self refresh (ASR)


    Original     		PDF MT41K1G4 MT41K512M8 MT41K256M16 09005aef8488935b s1866

    Refresh

    Abstract: No abstract text available
    Text: TECHNICAL NOTE Low Power Function of Mobile RAM Auto Temperature Compensated Self Refresh ATCSR CAUTION This document describes Auto Temperature Compensated Self Refresh (ATCSR), one of low power functions that have been adapted to Mobile RAM. All related operations and numerical values in this technical note are examples for reference only.


    Original     		PDF M01E0107 E0599E20 Refresh

    Untitled

    Abstract: No abstract text available
    Text: January 2001 Advance Information AS4VC256K16EO 2.5V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh


    Original     		PDF AS4VC256K16EO 40-pin 40/44-pin I/O15 AS4VC256K16E0-45JC AS4VC256K16EO-45TC AS4VC256K16EO-60JC

    AS4LC256K16EO

    Abstract: No abstract text available
    Text: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh - 45/50/60 ns RAS access time


    Original     		PDF AS4LC256K16EO 40-pin AS4LC256K16EO-45) 40/44-pin I/O15 40-pin AS4LC256K16E0-45JC AS4LC256K16E0-50JC AS4LC256K16EO

    Untitled

    Abstract: No abstract text available
    Text: AS4C256K16E0 5V 256Kx 16 CMOS DRAM EDO Features • Refresh - 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only o r CAS-before-RAS refresh o r self-refresh - Self-refresh o p tio n is available for n e w g en eratio n device • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits


    OCR Scan     		PDF AS4C256K16E0 256Kx AS4C256K16E0-25) S4C256K16E0-30JC S4C256K16E0-35JC AS4C256K16E0-50JC S4C256K16E0-50TC

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT4 L C1M16CX S 1 MEG X 16 DRAM IURN blllSHT I3004b21 4HT p ilC R O N MICRON TECHNOLOGY INC SSE » DRAM X 1 6 D R A M m 1 M E G 5.0V SELF REFRESH (MT4C1M16CX S) 3.0/3.3V, SELF REFRESH (MT4LC1M16CX S) FEATURES PIN ASSIGNMENT (Top View) • Self Refresh, ie "Sleep Mode"


    OCR Scan     		PDF C1M16CX I3004b21 MT4C1M16CX MT4LC1M16CX MT4C1M16C3/5 C1M16CXS 0004b44

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b3E D • blllSH^ □□□77A3 B4T « M R N ADVANCE MT4 L C2M8B1/2 S 2 MEG X 8 WIDE DRAM MICRON I SEMICONDUCTOR. INC WIDE DRAM 2 MEG X 8 DRAM 5.0V SELF REFRESH (MT4C2M8B1/2 S) 3.0/3.3V, SELF REFRESH (MT4LC2M8B1/2 S) FEATURES • SELF REFRESH, or "Sleep Mode"


    OCR Scan     		PDF 256ms)

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT4 L C2M8B1/2 S 2 MEG x 8 DRAM I^ IC Z R O N 2 MEG x 8 DRAM 5.0V SELF REFRESH (MT4C2M8B1/2 S) 3.0/3.3V, SELF REFRESH (MT4LC2M8B1/2 S) FEATURES PIN ASSIGNMENT (Top View) • SELF REFRESH, i.e. "Sleep M ode" • Industry standard x8 pinouts, tim ing, functions and


    OCR Scan     		PDF 256ms) 048-cycle 096-cycl0-A10; C2M881/2

    Untitled

    Abstract: No abstract text available
    Text: IBM11S1325L 1M x 32 SODIMM Module Features cations. Low active current consumption All inputs & outputs are LVTTL 3.3V or TTL(5V) compatible Extended Data Out (EDO) access cycle Refresh Modes: RAS-Only, CBR, Hidden Refresh and Self Refresh 1024 refresh cycles distributed across 128ms


    OCR Scan     		PDF IBM11S1325L 128ms 72-Pin 104ns 124ns 1Mx32 1Mx16

    RR 113001

    Abstract: 1M16E5
    Text: Advance information •■ AS4VC1M16E5 A 2.5V lM x 16 CMOS lntelliwatt,v DRAM EDO Features 1 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh 1Read-modify-write


    OCR Scan     		PDF AS4VC1M16E5 42-pin 44/50-pin AS4VC1M16E5-100JC AS4VC1M16E5-100TC 1M16E5 RR 113001 1M16E5

    400J

    Abstract: No abstract text available
    Text: SIEMENS 16M X 4-Bit Dynamic RAM 4k & 8k Refresh hYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Prelim inary Inform ation 7.2 mW standby (TTL) 720 nW standby (MOS) _ Read, write, read-modify-write, CAS-beforeRAS refresh (CBR), RAS-only refresh, hidden refresh and self


    OCR Scan     		PDF 3164400J/T 3165400J/T 3164400J/T-50) 3164400J/T-60) 3165400J/T-50) 3165400J/T-60) 400J/T-50/-60 400J

    Untitled

    Abstract: No abstract text available
    Text: Advance information •■ AS4SC1M 16E5 A 1,8V 1M x 16 C M O S Intelliwatt1'' DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 refresh cycles, 16 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh


    OCR Scan     		PDF 42-pin 42-pin AS4SC1M16E5-100JC 44/50-pin AS4SC1M16E5-100TC 1M16E5 44/50-pin

    Untitled

    Abstract: No abstract text available
    Text: Advance information •■ AS4VC256K16E0 A 2.5V 256KX 16 CMOS DRAM EDO Features • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 w ords x 16 bits - RAS-only or CAS-before-RAS refresh or self refresh • H ig h speed - 45/60 ns KAS access tim e


    OCR Scan     		PDF AS4VC256K16E0 256KX 40-pin 40/44-pin 40-pin AS4VC256K16E0-45JC AS4VC256K16E0-60JC 40/44-pin AS4VC256K16E0-45TC AS4VC256K16E0-60TC

    DRAM 4464

    Abstract: MX-1610 4464 memory 4464 dram
    Text: IBM11S1320LN IBM11S1320LL 1 M x 3 2 S O D IM M M odule Features • All inputs & outputs are TTL 5V or LVTTL(3.3V) compatible • Fast Page Mode access cycle • Refresh Modes: RAS-Only, CBR, Hidden Refresh and Self Refresh • 1024 refresh cycles distributed across 128ms


    OCR Scan     		PDF IBM11S1320LN IBM11S1320LL 72-Pin 110ns 130ns 128ms DRAM 4464 MX-1610 4464 memory 4464 dram