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    SEMELAB MOSFET Search Results

    SEMELAB MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    SEMELAB MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3810 LCC

    Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
    Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


    Original     		FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 2N3810 LCC 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die PDF

    Semefab

    Abstract: "RF power MOSFETs"
    Text: An introduction to Semelab RF power M O SFETs Semelab pic is one of the world’s leading manufacturers of RF Power MOSFETs. Our extensive range is designed to outperform all equivalent bipolar devices and offers the fol­ lowing benefits: r Lowest feedback capacitance


    OCR Scan     		750mW OT223, O-251, 20dbVHF -16dbU 750mWto350W Semefab "RF power MOSFETs" PDF

    250JUA

    Abstract: IRFY330 LE17
    Text: bGE D I 0133107 OQOQSSô ti7D • SMLB I SEMELAB PLC SEMELAB IRFY330 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS ï£ FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE


    OCR Scan     		IRFY330 T0220 T0220M T0220SM 20Kfi) 00A//it 00A/Ms 300/xs, 250JUA IRFY330 LE17 PDF

    500V 25A Mosfet

    Abstract: IRFV420 IRFY420
    Text: bOE D m Ô1331Ô7 OODOSbO 55^ •SMLB SEMELAB PLC { SEMELAB IRFY420 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS □r ï£ FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE


    OCR Scan     		T0220 T0220M T0220SM 300/is, LE174JB 500V 25A Mosfet IRFV420 IRFY420 PDF

    L014A

    Abstract: 00D05 IRFY130
    Text: bOE D • B1331Ô7 DOOOSSG SEMELAB 3ÔT ■ S M L B PLC SEMELAB 'T 'Z °\ -w IRFY130 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS FEATURES • HERMETICT0220 METALOR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE


    OCR Scan     		IRFY130 HERMETICT0220 T0220M T0220 T0220SM 00A/fis LE174JB L014A 00D05 IRFY130 PDF

    IRFY120

    Abstract: LE17
    Text: Li DE D Ô1331Û7 GDDOSMfl 721 « S I I L B SEMELAB PLC - SEMELAB T "- 3 m I IRFY120 HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS MECHANICAL DATA Dimensions in mm O " FEATURES • H ERM ETICT0220 M ETAL OR CERAM IC SURFACE M O U N T PACKAG ES


    OCR Scan     		IRFY120 HERMETICT0220 T0220M T0220 T0220SM 100ime 00A//XS 00A//u 300//S, IRFY120 LE17 PDF

    7703402YX

    Abstract: 7703402UX 7703405UX 7703402TX 5962-8778201TX 7703401XX 5962-8778201XA 7703401UX 7703401yx 7703402XX
    Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS QML LISTED VOLTAGE REGULATORS FULLY QUALIFIED PRODUCT EQUIVALENT TO DISCONTINUED LT AND OTHER TYPES TO3 TO257 Semelab DSCC-SMD Semelab DSCC-SMD IP117AHVK IP117AK IP117HVK IP117K


    Original     		IP117AHVK IP117AK IP117HVK IP117K IP120K-5 IP120K-12 IP120K-15 IP123AK-5 IP137AHVK IP137AK 7703402YX 7703402UX 7703405UX 7703402TX 5962-8778201TX 7703401XX 5962-8778201XA 7703401UX 7703401yx 7703402XX PDF

    smd diodes s4 1.5w

    Abstract: PD9002 QR204 A4A smd SMD a3a GENERAL SEMICONDUCTOR SMD DIODES s4 smd code marking a3a QR208 QR217 smd code marking a4a
    Text: Semelab Limited High Reliability and Screening Options DOC 2624 ISS 8 Contents 1. Introduction. 1 2. Quality Approvals . 2


    Original     		QR209 BS9300 QR216 QR204 MIL-PRF-19500 smd diodes s4 1.5w PD9002 QR204 A4A smd SMD a3a GENERAL SEMICONDUCTOR SMD DIODES s4 smd code marking a3a QR208 QR217 smd code marking a4a PDF

    Untitled

    Abstract: No abstract text available
    Text: bQE D • 01331Ô7 GGGDSMS - T12 ■ - SEMELAB PLC SIILB ^ r -3 ° i-^ 3 prpr M AGNA r^ tec BUZ 905P BUZ 90BP NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY,


    OCR Scan     		BUZ900P BUZ901P PDF

    6040BN

    Abstract: sml5540bn
    Text: _ SEMELAB = ^ bOE PLC 0133107 D ODOObHß b02 • S I1LB MOS POWER 4 = SML6040BN SML5540BN SML6045BN SML5545BN SEM E LAB 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.4012 0.4012 0.4512 0.4512 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		SML6040BN SML5540BN SML6045BN SML5545BN 5540BN 6040BN 5545BN 6045BN O-247AD PDF

    sml4020hn

    Abstract: 4020HN sml3520hn SML4020/4025HN
    Text: SEMELAB bOE D PLC • 0133107 0000354 77Ô ■S M L B mi =^= mi SEME -15 SML4020HN SML3520HN SML4025HN SML3525HN LAB 400V 350V 400V 350V 23.5A 23.5A 21.0A 21.0A 0.20ft 0.20ft 0.25ft 0.25ft N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		SML4020HN SML3520HN SML4025HN SML3525HN 3520HN 4020HN 3525HN 4025HN SML4020/3520/4025/3525HN 100ms SML4020/4025HN PDF

    BROWN BOVERI guanella

    Abstract: transistor c 5287 800w rf power amplifier circuit diagram transmission line transformers Design of H.F. Wideband Power Transformers Practical Wideband RF Power Transformers 300w rf amplifier uhf guanella transformers 325 339 H C 5287 equivalent
    Text: RF APPLICATION NOTE: PUSH-PULL CIRCUITS and WIDEBAND TRANSFORMERS Push-Pull Transistors Semelab plc produces a wide range of push-pull MOSFETs and this application note is intended as a guide to some circuit design principles which are particularly appropriate when using these


    Original     		0-89000679-7X ARRL1990; BROWN BOVERI guanella transistor c 5287 800w rf power amplifier circuit diagram transmission line transformers Design of H.F. Wideband Power Transformers Practical Wideband RF Power Transformers 300w rf amplifier uhf guanella transformers 325 339 H C 5287 equivalent PDF

    sml752r4cn

    Abstract: No abstract text available
    Text: bDE D SEMELAB PLC A1331Ô7 OOGDfiEb ÛG3 MSIILB IN I = ^ = SEME m i SML802R4CN SML752R4CN SML802R8CN SML752R8CN LAB 800V 750V 800V 750V 2.4012 2.40Í2 2.8012 2.80Í2 4.5A 4.5A 4.0A 4.0A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		A1331 SML802R4CN SML752R4CN SML802R8CN SML752R8CN 752R4CN 802R4CN 752R8GCN 802R8CN 12802R8C PDF

    "RF power MOSFETs"

    Abstract: LE17 LMP1603 LMP2003 rf mosfet power amplifier MOSFET AMPLIFIER For MOBILE RADIO
    Text: RF AMPLIFIER MODULES Semelab is pleased to announce the first modules in a range designed in conjunction with LMT for Private Mobile Radio PMR systems. These modules utilise Semelab's own RF power MOSFETs in order to achieve: • High output power (5.5W typically)


    Original     		-25dBc) LMP2003 LMP1603 "RF power MOSFETs" LE17 LMP1603 LMP2003 rf mosfet power amplifier MOSFET AMPLIFIER For MOBILE RADIO PDF

    MCA0616/1

    Abstract: T-120-01B Skynet Electronic
    Text: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology


    Original     		MIL-PRF-19500 QR216, QR217 FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 MCA0616/1 T-120-01B Skynet Electronic PDF

    UC7-1A

    Abstract: fast recovery 50amp SML50SUZ12S
    Text: SML50SUZ12S Ultrafast Recovery Diode 1200 Volt, 50Amp TECHNOLOGY The planar passivated and standard ultrafast recovery Back of Case Cathode diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with SML


    Original     		SML50SUZ12S 50Amp 50SUZ12S UC7-1A fast recovery 50amp SML50SUZ12S PDF

    Untitled

    Abstract: No abstract text available
    Text: SML30SUZ12B Ultrafast Recovery Diode 1200 Volt, 30 Amp TECHNOLOGY Back of Case The planar passivated and standard ultrafast recovery Cathode diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with SML


    Original     		SML30SUZ12B 30SUZ03B PDF

    STK412-750

    Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
    Text: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: [email protected] Website: www.magnatec-tt.com A subsidiary of TT electronics plc


    Original     		SELT2WA10C SELT2WC10C SELT2WD10C SELT2WE10C SELT2WF10C SELT2WH10C SELT2WJ10C SELT2WK10C SELT2WA13C SELT2WC13C STK412-750 STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870 PDF

    Untitled

    Abstract: No abstract text available
    Text: SML60SUZ06S Ultrafast Recovery Diode 600 Volt, 60Amp Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising SML 60SUZ06S Semelab’s Graded Buffer Zone technology combined with


    Original     		SML60SUZ06S 60Amp 60SUZ06S PDF

    15suz06d

    Abstract: fast recovery diode 600v 5A SML15SUZ06D
    Text: SML15SUZ06D Ultrafast Recovery Diode 600 Volt, 15 Amp Back of case live Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with


    Original     		SML15SUZ06D 15SUZ06D 15suz06d fast recovery diode 600v 5A SML15SUZ06D PDF

    countersunk torque settings

    Abstract: torque settings for metric cap head screws torque settings metric flange D1028UK "RF MOSFETs" COUNTERSUNK SOCKET SCREW tightening torque aluminium torque of 4-40 screw for pcb
    Text: Mounting Guidelines for SEMELAB RF MOSFETS Prepared by: Nick Padfield Introduction The performance of RF MOSFETs can be severely reduced by poor thermal considerations. In today’s market designers are being asked to not only make higher power systems but also make them smaller,


    Original     		PDF

    sml1004r2Cn

    Abstract: sml1004rcn
    Text: SEMELAB bDE PLC 61331Ô 7 ï 00007^4 III! M73 ISMLB MOS POWER 4 -13 llll SML1004RCN SML904RCN SML1004R2CN SML904R2CN SEME LAB 1000V 900V 1000V 900V 3.6A 3.6A 3.3A 3.3A 4.00Í1 4.00Q 4.2012 4.20Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		SML1004RCN SML904RCN SML1004R2CN SML904R2CN 904RCN 1004RCN 904R2CN 1004R2CN Factor04R2GN 100mS PDF

    501R1BN

    Abstract: sml451r1bn
    Text: SEMELAB PLC bGE D 6133107 D000b3b WO ISflLB 4 MOS POWER = 1 1 = " T SML5085BN SML4585BN SML501R1BN SML451R1BN SEM E LAB 500V 450V 500V 450V y \ - \ s 9.5A 9.5A 9.0A 9.0A 0.85Q 0.Q5Q. 1.10Q 1.1 OQ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		D000b3b SML5085BN SML4585BN SML501R1BN SML451R1BN 4585BN 5085BN 451R1BN 501R1BN O-247AD sml451r1bn PDF

    SML60EUZ06B

    Abstract: No abstract text available
    Text: SML60EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 60Amp TECHNOLOGY Back of Case The planar passivated and enhanced ultrafast recovery Cathode diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		SML60EUZ06B 60Amp 60EUZ06B O-247 SML60EUZ06B PDF