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    SEMICONDUCTOR KMB 054N40 Search Results

    SEMICONDUCTOR KMB 054N40 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    SEMICONDUCTOR KMB 054N40 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    054n40

    Abstract: KMB054N40 semiconductor 054n40 kmb054n40da semiconductor KMB 054N40 marking DA DA DPAK kmb 054n40
    Text: SEMICONDUCTOR KMB054N40DA 1 MARKING SPECIFICATION DPAK(1) PACKAGE 1. Marking method Laser Marking. 2. Marking 2 No. 2007. 4. 18 KMB 054N40 DA 709 1 3 Item Marking Description Device Name KMB054N40DA(1) KMB054N40DA(1) Revision - - Lot No. 709 Revision No : 0


    Original     		KMB054N40DA 054N40 054n40 KMB054N40 semiconductor 054n40 semiconductor KMB 054N40 marking DA DA DPAK kmb 054n40 PDF

    054N40

    Abstract: KMB054N40 semiconductor 054n40 KMB054N40D kmb054n40dB
    Text: SEMICONDUCTOR KMB054N40DB TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power


    Original     		KMB054N40DB Fig11. Fig12. 054N40 KMB054N40 semiconductor 054n40 KMB054N40D kmb054n40dB PDF

    kmb054n40da

    Abstract: KMB054N40 054n40 semiconductor 054n40 semiconductor KMB 054N40 054n40 da
    Text: SEMICONDUCTOR KMB054N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power


    Original     		KMB054N40DA Fig11. Fig12. kmb054n40da KMB054N40 054n40 semiconductor 054n40 semiconductor KMB 054N40 054n40 da PDF

    KMB054N40

    Abstract: 054n40 semiconductor 054n40 KMB054N40IA dc101
    Text: SEMICONDUCTOR KMB054N40IA TECHNICAL DATA N-Ch Trench MOSFET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power


    Original     		KMB054N40IA Fig10. Fig11. Fig12. KMB054N40 054n40 semiconductor 054n40 KMB054N40IA dc101 PDF

    KMB054N40

    Abstract: 054N40 semiconductor 054n40 KMB054N40DC KMB054N40D 40V 14A DPAK *054n40 kmb-054n40
    Text: SEMICONDUCTOR KMB054N40DC TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power


    Original     		KMB054N40DC Fig10. Fig11. Fig12. KMB054N40 054N40 semiconductor 054n40 KMB054N40DC KMB054N40D 40V 14A DPAK *054n40 kmb-054n40 PDF