semikron skkt snubber
Abstract: semikron snubber semikron rc RCD snubber semipack skkt semikron Vvrms SKN240 SKN 128 snubber
Text: by SEMIKRON 0896 B 14 – 125 14.8 RC Snubber Networks on Printed Circuit Boards continued for protecting individual thyristors or diodes RC 35 RC 46 . 47 Dimensions in mm SEMIPACK SKKT 41 . 250 SKKH 41 . 250 SKKD 46 . 260 VVRMS < 500 V Type C R RC 35
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semikron skkd 46/12
Abstract: SKKD 106 semikron SkkD 81/04 semikron skkD 81/12 semikron skkd 81/14 SKND 81/04 semikron skkt 106 SKKD skkd 46/08 SKKD 80
Text: VRRM VRSM IFRMS maximum value for continuous operation 90 A 140 A 140 A IFAV (sin. 180; Tcase = . . .) V V 57 A (71 °C) 90 A (80 °C) 90 A (80 °C) 500 700 400 600 SKKD 46/04 SKKD 46/06 SKKD 81/04 SKKD 81/06 SKKE 81/04 SKKE 81/06 900 1300 800 1200 SKKD 46/08
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O-240
semikron skkd 46/12
SKKD 106
semikron SkkD 81/04
semikron skkD 81/12
semikron skkd 81/14
SKND 81/04
semikron skkt 106
SKKD
skkd 46/08
SKKD 80
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SKKD 80
Abstract: Diode semikron skke 120 Diode semikron skke 81 SKND 81 semikron skkd 80 semikron skkd 140 semikron skke 80 SKKD SKND81 Diode semikron skke 400
Text: VRSM VRRM V V 500 700 900 1300 1500 1700 1900 2100 2300 400 600 800 1200 1400 1600 1800 2000 2200 IFRMS maximum values for continuous operation 90 A 140 A 140 A IFAV (sin. 180; Tcase = . . .) 57 A (71 °C) 90 A (80 °C) 90 A (80 °C) SKKD 46/04 SKKD 46/06
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semikron skkt 26/12
Abstract: semikron skkt 91/12e semikron skkt 162/ 12/ D semikron skkt 56/14e SKKT 41/12 E SKKT 57/12 E semikron skkd 162/16 THYRISTOR skkt 91/12 e semikron thyristor skkt 162 SKKT 31
Text: VRSM VRRM V V 500 700 900 1300 1500 1700 1900 2100 2300 400 600 800 1200 1400 1600 1800 2000 2200 IFRMS maximum values for continuous operation 90 A 140 A 140 A IFAV (sin. 180; Tcase = . . .) 57 A (71 °C) 90 A (80 °C) 90 A (80 °C) SKKD 46/04 SKKD 46/06
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SEMIPACK0
Abstract: Semikron 50 04 a3 C3185 9B19 b17 diode skke15 Semikron 60 08 a3 semipack 1
Text: VRSM VRRM V V 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 IFRMS maximum values for continuous operation 24 A2); 28 A3) 24 A2); 28 A3) 60 A IFAV (sin. 180; Tcase = 71 °C) 17,5 A3) 17,5 A3) 38 A – SKKD 15/06 SKKD 15/08 SKKD 15/12 SKKD 15/14 SKKD 15/16
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3A/125
SEMIPACK0
Semikron 50 04 a3
C3185
9B19
b17 diode
skke15
Semikron 60 08 a3
semipack 1
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semikron skkt 26/12
Abstract: skke 15/14 semikron skkt 31 semikron skkd 15/12 semipack skMt semipack skkt 31 SKKT 26-12 semipack 1 semipack skkt semipack skkt 15/16
Text: VRRM VRSM IFRMS maximum value for continuous operation 24 A2); 28 A3) 24 A2); 28 A3) 60 A SEMIPACK 0 SKKD 15 SKKE 15 SEMIPACK® 1 SKKD 26 IFAV (sin. 180; Tcase = 71 °C) V V 17,5 A3) 17,5 A3) 38 A 500 700 400 600 – SKKD 15/06 SKKE 15/04 SKKE 15/06 –
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semikron skkt 26/12
skke 15/14
semikron skkt 31
semikron skkd 15/12
semipack skMt
semipack skkt 31
SKKT 26-12
semipack 1
semipack skkt
semipack skkt 15/16
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SKND 81
Abstract: semikron skkd 600 Diode semikron skke 400 SKKD SKND 81/04
Text: VRSM VRRM V V 500 700 900 1300 1500 1700 1900 2100 2300 400 600 800 1200 1400 1600 1800 2000 2200 IFRMS maximum values for continuous operation 90 A 140 A 140 A IFAV (sin. 180; Tcase = . . .) 57 A (71 °C) 90 A (80 °C) 90 A (80 °C) SKKD 46/04 SKKD 46/06
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Untitled
Abstract: No abstract text available
Text: SKKD 46/08 G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 57 Tc = 100 °C 43 A Tj = 25 °C 700 A Tj = 130 °C 600 A Tj = 25 °C 2450 A2s Tj = 130 °C 1800 A2s VRSM 900 V VRRM 800 V -40 . 130 °C -40 . 125 °C 1 min
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E63532
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semikron skmd
Abstract: A940A diode skmd 40 f 10 semikron SKKD 80 diode b26 semikron skkd 80 semikron skmd 100
Text: VRSM VRRM IFRMS maximum values for continuous operation 110 A 110 A V IFAV (sin. 180; Tcase = 80 °C; 50 Hz) 40 A 40 A 400 SKKD 40 F 04 SKMD 40 F 04 600 SKKD 40 F 06 SKMD 40 F 06 800 SKKD 40 F 08 SKMD 40 F 08 1000 SKKD 40 F 10 SKMD 40 F 10 sin. 180; Tcase = 85 °C
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Nm/44
Nm/26
semikron skmd
A940A
diode skmd 40 f 10 semikron
SKKD 80
diode b26
semikron skkd 80
semikron skmd 100
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Untitled
Abstract: No abstract text available
Text: SKKD 46/16 G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 57 Tc = 100 °C 43 A Tj = 25 °C 700 A Tj = 130 °C 600 A Tj = 25 °C 2450 A2s Tj = 130 °C 1800 A2s VRSM 1700 V VRRM 1600 V -40 . 130 °C -40 . 125 °C
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E63532
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Untitled
Abstract: No abstract text available
Text: SKKD 46/12 G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 57 Tc = 100 °C 43 A Tj = 25 °C 700 A Tj = 130 °C 600 A Tj = 25 °C 2450 A2s Tj = 130 °C 1800 A2s VRSM 1300 V VRRM 1200 V -40 . 130 °C -40 . 125 °C
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E63532
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KKD090F
Abstract: No abstract text available
Text: VRSM VRRM IFRMS maximum values for continuous operation 150 A V IFAV (sin. 180; Tcase = 85 °C; 50 Hz) 90 A 400 SKKD 90 F 04 600 SKKD 90 F 06 Symbol Conditions SEMIPACK 1 Fast Diode1) Modules SKKD 90 F Preliminary Data SKKD 90 F Units 90 A IFAV Tcase = 85 °C; sin. 180
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O-240
KKD090F
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Untitled
Abstract: No abstract text available
Text: VRSM VRRM IFRMS maximum values for continuous operation 110 A 110 A V IFAV (sin. 180; Tcase = 80 °C; 50 Hz) 40 A 40 A 400 SKKD 40 F 04 SKMD 40 F 04 600 SKKD 40 F 06 SKMD 40 F 06 800 SKKD 40 F 08 SKMD 40 F 08 1000 SKKD 40 F 10 SKMD 40 F 10 IFAV sin. 180; Tcase = 85 °C
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Nm/44
Nm/26
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Untitled
Abstract: No abstract text available
Text: SKKD 46/08 G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 57 Tc = 100 °C 43 A Tj = 25 °C 700 A Tj = 130 °C 600 A Tj = 25 °C 2450 A2s Tj = 130 °C 1800 A2s VRSM 900 V VRRM 800 V -40 . 130 °C -40 . 125 °C 1 min
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E63532
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semikron skke 260
Abstract: semikron skkd 600 semikron skkd 80 semikron skke 20 semikron skke 80 SKKD 80 semikron skke
Text: VRSM VRRM IFRMS maximum values for continuous operation 315 A 410 A 315 A 410 A IFAV (sin. 180; Tcase = 80 °C) 260 A 200 A V V 200 A 260 A 900 800 SKKD 201/08 SKKD 260/08 SKKE 201/08 SEMIPACK 3 Rectifier Diode Modules SKKD 201 SKKE 201 SKKD 260 SKKE 260
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semikron skke 260
Abstract: SKKE201 B166 Diode semikron 103
Text: SEMIKRON INC 3bE ]> m Ô13bb71 G0D2ESÔ b « S E K G -p.^.oo, Vrsm Vrrm Ifrms maximum values for continuous operation 315 A | 410 A | 315 A | 410 A Ifav (sin. 180; case = 80 C) 260 A 200 A 260 A V 200 A 800 SKKD 201/08 SKKD 260/08 SKKE 201/08 1200 SKKD 201/12
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3/180F
P16/200
SKKD201
semikron skke 260
SKKE201
B166
Diode semikron 103
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AL655
Abstract: L130 semikron skke 260 GDG3341 QDD3342 SKKD201 000A2s A2S11 V600 800g940
Text: SIE D • ölBbb?! 0^0333^ S7T » S E K G SEMI KRÖN SEMIKRON INC V rsm V rrm 410 A SEMIPACK 3 Rectifier Diode Modules 260 A SKKD 201 SKKD 260 Ifrms maxim um values for continuous o peration 315 A I 410 A I 315 A IfaV (sin. 180; Tease = 80 °C) V 900 V
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T-23-09
111II1111
B1-24
AL655
L130
semikron skke 260
GDG3341
QDD3342
SKKD201
000A2s
A2S11
V600
800g940
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Semipack 1 skfh
Abstract: semikron 14 MD skkd 92 b1 thyristor Semipack skfh Semipack skfh 40 SKKD SKKD40F10 SKFH30 SKKD40F SKKD40M
Text: SEMIKRON INC iS E o | o o a m tB 5 | S EM IK R D N Ifrms maximum values for continuous of jeratlon 110 A | 110 A | 110 A 110 A V rsm V rrm Ifav (sin. 180; Teasb = .°C ;5 0 H z 40A(83°C) 40A(83°C) V 40A(80°C) 400 SKKD 40 F 04 SKMD 40 F 04 600 SKKD 40 F 06
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SKKD40F10
SKKD40F
SKKD40
125t3
4400A2s
B2-11
l3bb71
Semipack 1 skfh
semikron 14 MD
skkd 92 b1 thyristor
Semipack skfh
Semipack skfh 40
SKKD
SKFH30
SKKD40M
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Untitled
Abstract: No abstract text available
Text: SEMIKRON I f r m s m a x im u m v a lu e s fo r c o n tin u o u s o p e ra tio n V rsm 110 A V r rm | 110 A I fav (s in . 180 ; Teas e = 8 0 °C ; 5 0 H z) 40 A V 40 A 400 SKKD 40 F 04 SKMD 40 F 04 600 SKKD 40 F 06 SKMD 40 F 06 800 SKKD 40 F 08 SKMD 40 F 08
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KD040F0B
O-240
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Untitled
Abstract: No abstract text available
Text: SEMIKRON V rsm V rrm Ifrms maximum value for continuous operation 110 A | 325 A V Ifav (sin. 180; T case = 85 °C; 50 Hz) 48,5 A 207 A Ultrafast Epitaxial Diode Modules 100 SKKD 50 E 01 SKND 50 E 01 SKMD 202 E 01 SKND 202 E 01 200 SKKD 50 E 02 SKND 50 E 02 SKMD 202 E 02 SKND 202 E 02
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O-240
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Untitled
Abstract: No abstract text available
Text: s e m ik r d n V rsm Ifrms maximum values for continuous operation 110 A I 110 A V rrm (sin. 180; T ca. e = 80 °C; 50 Hz) 40 A 40 A Ifa v V 400 SKKD 40 F 04 SKMD 40 F 04 600 SKKD 40 F 06 SKMD 40 F 06 800 SKKD 40 F 08 SKMD 40 F 08 1000 SKKD 40 F 10 S K M D 40 F 10
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O-240
Q005TEQ
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90f06
Abstract: No abstract text available
Text: s em ik r o n Ifrm s V rsm 150 A V rrm Ifa v V Fast Diode1* Modules sin. 180; Tease = 85 °C; 50 Hz 90 A 400 SKKD 90 F 04 600 SKKD 90 F 06 Symbol Conditions Ifav Tease = 85 °C; sin. 180 Ifsm T Vj = 25 °C; 10 ms Tvj = 150 °C; 10 ms i2t T Vj = 25 °C; 8,3 . 10 ms
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D-90253
90f06
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semikron skmd 100
Abstract: No abstract text available
Text: s e m ik r d n V rsm If r m s m axim u m valu e s fo r co ntin u o us operation 110 A V rrm | 110 A Ifa v (sin. 180; Teas* = 80 °C; 50 Hz) SKKD 40 F SKMD 40 F 40 A 40 A 400 SKKD 40 F 04 SKMD 40 F 04 600 SKKD 40 F 06 SKMD 40 F 06 800 SKKD 40 F 08 SKMD 40 F 08
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O-240
semikron skmd 100
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Untitled
Abstract: No abstract text available
Text: silìJllCllii V rsm Ifrm s m axim um va lu e s fo r co n tin u o u s operation V rrm 150 A Ifa v (sin. 180; T ca se Fast Diode1) Modules = 85 °C ; V 90 A 400 SKKD 90 F 04 600 SKKD 90 F 06 Symbol Conditions Ifav Ifsm Tease Tvj Tvj i2t T Vj Tvj = 85 °C; sin. 180
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O-240
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