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SEMIKRON SEMIX453GAL12E4S Igbt Module, Single, 1.2Kv, 683A; Continuous Collector Current:683A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX453GAL12E4S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX453GAL12E4S	Bulk			6	1 - 10 $155.8 100 $142.45 1000 $142.45 10000 $142.45	Buy Now
SEMIKRON SEMIX453GAL12E4S 27890144 Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX453GAL12E4S 27890144				1	1 $471.85 10 $371.8 100 $334.93 1000 $334.93 10000 $334.93	Get Quote

SEMIX453GAL12E4S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX453GAL12E4s E63532 Ap453GAL12E4s
SEMiX453GAL12E4s Abstract: No abstract text available Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	PDF	SEMiX453GAL12E4s SEMiX453GAL12E4s
Untitled Abstract: No abstract text available Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C	Original	PDF	SEMiX453GAL12E4s E63532
SEMIX453GAL12E4S Abstract: No abstract text available Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX453GAL12E4s E63532 SEMIX453GAL12E4S
Untitled Abstract: No abstract text available Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX453GAL12E4s E63532
Untitled Abstract: No abstract text available Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	PDF	SEMiX453GAL12E4s E63532
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	PDF	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1